LIGHT-EMITTING DIODE SIC Search Results

Contextual Info: BACK LIGHT GLP003PBC BLUE Features Description ! LOW The Blue source color devices are made with InGaN on POWER REQUIREMENTS. ! LARGE AREA, UNIFORM, BRIGHT LIGHT SiC Light Emitting Diode. EMITTING SURFACE. ! EASY ! LOW FOR INSTALLATION. POWER CONSUMPTION.

Contextual Info: HL-AF-3528S9FU57GH183BC-A RED \ GREEN \ BLUE Description Features zSUITABLE FOR ALL SMT ASSEMBLY AND on GaAs substrate Light Emitting Diode. SOLDER PROCESS. ON TAPE AND REEL. The Blue source color devices are made with GaN on 2000PCS / REEL. SiC Light Emitting Diode.

Contextual Info: BACK LIGHT AT T E N T I O N OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES GLP-003/1608PBC BLUE Features Description l LARGE InGaN on SiC Light Emitting Diode. l LOW POWER REQUIREMENTS. AREA, UNIFORM, BRIGHT LIGHT EMITTING SURFACE.

L2043

Abstract: L2043MBDT
Contextual Info: 3.65x6.15mm SINGLE CHIP LED LIGHT BAR L2043MBDT BLUE Features Description z FLAT The Blue source color devices are made with GaN on SiC Light RECTANGULAR LIGHT EMITTING SURFACE. z SINGLE z IDEAL AS FLUSH MOUNTED PANEL INDICATORS. z EXCELLENT z LONG Emitting Diode.

arl5213

Abstract: ARL-5213RGBC red blue diode ARL-5213RG
Contextual Info: ARL-5213RGBC/4C Features • • • • • Uniformlight output Lowpowerconsumption I.C.Compatible Longlife-solidstatereliaility Common cathode Descriptions • The Red source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode • The Green source color devices are made with InGaN on sic Light Emitting Diode

hitachi he8812sg

Abstract: Hitachi DSA002726
Contextual Info: HE8812SG GaAlAs Infrared Emitting Diode Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features • High efficiency, high output

Hitachi DSA002727

Contextual Info: HE8404SG GaAlAs Infrared Emitting Diode Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features • High efficiency, high output

Hitachi DSA0087

Abstract: HE8404SG
Contextual Info: HE8404SG GaAlAs Infrared Emitting Diode ADE-208-997 Z 1st Edition Dec. 2000 Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.

hitachi he8812sg

Abstract: Hitachi DSA0087 HE8812SG
Contextual Info: HE8812SG GaAlAs Infrared Emitting Diode ADE-208-1000 Z 1st Edition Dec. 2000 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.

Hitachi DSA00306

Abstract: HE8404SG
Contextual Info: HE8404SG GaAlAs Infrared Emitting Diode ADE-208-997 Z 1st Edition Dec. 2000 Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.

Hitachi DSA002726

Contextual Info: HE8811 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments

Contextual Info: BACK LIGHT ATTENTION GLP-003/1608PBC BLUE OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description LOW POWER REQUIREMENTS. The Blue source color devices are made with InGaN LARGE AREA, UNIFORM, BRIGHT LIGHT on SiC Light Emitting Diode.

Hitachi DSA0087

Abstract: HE7601SG
Contextual Info: HE7601SG GaAlAs Infrared Emitting Diode ADE-208-996 Z 1st Edition Dec. 2000 Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.

Hitachi DSA002727

Contextual Info: HE7601SG GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. Features • High efficiency and high output power

Contextual Info: SUBMINIATURE SOLID STATE LAMP PRELIMINARY SPEC AM27UVC03 Features Description !SUBMINIATURE PACKAGE. The source color devices are made with InGaN on !GULL WING. SiC Light Emitting Diode. ! LONG LIFE - SOLID STATE RELIABILITY. This device radiates intense ultraviolet UV light

HE8811

Abstract: Hitachi DSA0047
Contextual Info: HE8811 GaAlAs Infrared Emitting Diode ADE-208-999 Z 1st Edition Dec. 2000 Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments

Hitachi DSA0087

Abstract: HE8811
Contextual Info: HE8811 GaAlAs Infrared Emitting Diode ADE-208-999 Z 1st Edition Dec. 2000 Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments

SLA560

Abstract: SLA560BBT SLA560BBT3F TSZ22111 marking 02 information lot
Contextual Info: PRODUCTS VISUAL LIGHT E M im N G DIODE - TYPE SLA560BBT 1. CONSTRUCTION 2. USAGE Source o f light for display unit 3. DIMENSIONS See Figure. 1 4. ABSOLUTE MAXIMUM RATINGS 6 / InGaN on SiC blue visual light emitting diodes packaged with colorless epoxy. Ta=25°C

kingbright

Abstract: LED kingbright white AA3022PWC45SFRV kingbright lens
Contextual Info: Kingbright 3.0x2.2mm SINGLE COLOR SURFACE MOUNT LED LAMP AA3022PWC45SFRV Features Description !3.0mm x 2.2mm SMT LED, 1.5mm THICKNESS. The source color devices are made with InGaN !WHITE REFLECTOR TO MAXIMIZE REFLECTION on SiC Light Emitting Diode. OF LIGHT.

Contextual Info: 1.6x0.8mm SMD CHIP LED LAMP APHK1608PWC WHITE Features Description !1.6mmx0.8mm SMT LED, 0.7mm THICKNESS. The source color devices are made with InGaN on SiC !LOW POWER CONSUMPTION. Light Emitting Diode. !WIDE VIEWING ANGLE. ! IDEAL FOR BACK LIGHT AND INDICATOR.

rectangular blue led

Abstract: MV5B
Contextual Info: SOLID STATE LED LAMP RECTANGULAR 2 X 5 mm LED LAMPS MV52123 MV57123 AlGaAs HER Red MV53123 MV5B123 Yellow Blue MV54123 Green DESCRIPTION This rectangular LED lamp provides a lighted surface area of 2 X 5 mm. The high efficiency red and yellow solid state lamps contain a GaAsP on GaP light emitting diode. The green lamps utilize a GaP light emitting diode.

KPPDA04-121

Contextual Info: SURFACE MOUNT DISPLAY KPPDA04-121 GREEN Features Description !0.4 INCH CHARACTER HEIGHT. The Green source color devices are made with InGaN !LOW on SiC Light Emitting Diode. CURRENT OPERATION. !HIGH CONTRAST AND LIGHT OUTPUT. ! EASY MOUNTING ON P.C. BOARDS OR SOCKETS.

Contextual Info: SURFACE MOUNT DISPLAY APPSC04-41PWWA WHITE Features Description !0.4 INCH CHARACTER HEIGHT. The source color devices are made with InGaN on !LOW CURRENT OPERATION. SiC Light Emitting Diode. !HIGH CONTRAST AND LIGHT OUTPUT. ! EASY MOUNTING ON P.C. BOARDS OR SOCKETS.

Contextual Info: SURFACE MOUNT DISPLAY APPSC04-41VGKWA GREEN Features Description !0.4 INCH CHARACTER HEIGHT. The Green source color devices are made with !LOW CURRENT OPERATION. InGaN on SiC Light Emitting Diode. !HIGH CONTRAST AND LIGHT OUTPUT. !EASY MOUNTING ON P.C. BOARDS OR SOCKETS.