LM 2480 NA Search Results

Contextual Info: LM 2480 LM2480 80V Triple Bias Clamp T ex a s In s t r u m e n t s Literature Number: SNOS938C O c to b e r 2 7 , 2011 LM2480 In s t r u m e n t s 80V Triple Bias Clamp General Description Features T h e L M 2 4 8 0 d r iv e r is a n In te g ra te d 8 0 V trip le b ia s c la m p c ir­

Contextual Info: PTFA240451E PTFA240451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2420 – 2480 MHz Description The PTFA240451E and PTFA240451F are thermally-enhanced, 45-watt, internally matched GOLDMOS FETs intended for CDMA2000 applications from 2420 to 2480 MHz. Thermallyenhanced packaging provides the coolest operation available. Full

PTFA240451E

Abstract: 200B BCP56 LM7805
Contextual Info: PTFA240451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420 – 2480 MHz Description The PTFA240451E is a thermally-enhanced, 45-watt, internallymatched GOLDMOS FET intended for CDMA2000 and WiMAX applications from 2420 to 2480 MHz. Thermally-enhanced packaging

PTFA241301F

Abstract: PTFA241301E LM7805 BCP56 A241301e H-30260-2
Contextual Info: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000,

Contextual Info: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000,

Contextual Info: PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characterized for CDMA and CDMA2000

capacitor 104 12KV

Abstract: PTFA240451E LM7805
Contextual Info: PTFA240451E PTFA240451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2420 – 2480 MHz Description The PTFA240451E and PTFA240451F are thermally-enhanced, 45-watt, internally-matched GOLDMOS FETs intended for CDMA2000 and WiMAX applications from 2420 to 2480 MHz.

2S20

Abstract: FSLM2520 FSLM2620-R39 core i5 520 Toko 7mm 1008 footprint TOKO 252 to 252 footprint
Contextual Info: r& TO KO FSLM2520 Series Surface Mount Inductors DESCRIPTION The FSLM2520 Series is a ferrite core wirewound surface mount chip inductor which conforms to the EIA standard 1008 footprint. Its proprietary welded termination archi­ tecture offers superior reliability and high heat-resistance

2SK2516-01L

Abstract: 2SK2516-01S
Contextual Info: SPECI DEVICE NAME : TYPE NAME : SPEC. No. : F I C A T I O N Powe r 2SK2 M O S F E T 5 1 6 -0 F u j i 1 L. S E l e c t r i c Co., L t d This Sp e cification is subject to change without notice. DATE DRAWN CHECKED NAME APPROVED Fuji Electric C odici o 5 1 /Z

1n0K 63

Abstract: 16193A 1n0K 10nK 63 LMC1005 LMC1608 LMC2012 LMC-1608T
Contextual Info: CERAMIC CHIP INDUCTORS •FEATURES ABCO chip inductor is wire wound type ceramic inductor. And our product provide high Q value. So ABCO chip inductor can be SRF self resonant frequency industry. This can often eliminate the need for variable components in

Contextual Info: LM300 Bluetooth Ethernet Access Point/ Server 3 simultaneous Bluetooth SPP connections 1 Product: LM300 Part No: 300-0361 Features LM300 Server Features • Supports 10/100 Mbps Ethernet • Supports RS-232, RS-422 and RS-485 serial interface • Supports LAN and WAN Communications

2N9860

Abstract: 2N3869 2N3880 2N3856 n3860 transistor 2N3 2N2711 2N2712 2N3858 2N2714
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘

LMC 84

Abstract: 1n5j 20NG 095 K3639 1n0j 100 042 LMC 40R12 3N9G 10NG 20NG
Contextual Info: CERAMIC CHIP INDUCTORS •FEATURES ABCO chip inductor is wire wound type ceramic Inductor. And our product provide high Q value. So ABCO chip inductor can be SRF self resonant frequency industry. This can often eliminate the need for variable components in tunner circuits

ceag ghg 122 3121

Abstract: ceag ghg 534 ceag ghg 534 2506 crouse-hinds GHG 960 663 B0708 CEAG PTB 00 ATEX 3108 ceag ghg 412 ceag ghg 543 ceag GHG 543 2306 Ex-92
Contextual Info: C A T A L O G U E E X P L O S I O N P R O T E C T E D 3 1 0 P R O D U C T S The CEAG Sicherheitstechnik GmbH factory in Eberbach, Germany The CEAG Nortem SA Barcelona, Spain The factory in Sheerness, UK CEAG SICHERHEITSTECHNIK GMBH Essentials, Innovations and a few words about your money

MD58-0002

Abstract: 2440I
Contextual Info: Corning Attractions Æ an A M P com pany Linear Integrated Transceiver 2.4 - 2.5 GHz M D58-0002 V 2.00 Features SSOP-28 +.0037 .3900 , 0041 • Fully In tegrated Transm it and R eceiv e F u n ctio n s +.0025 0275 -.0025 • High Linear Transm it P ow er: O u tpu t P , ^ = 9 d B m

Contextual Info: Bridgelux RS Array Series Product Data Sheet DS25 BXRA-27x4000, BXRA-27x7000, BXRA-30x4000, BXRA-30x7000, BXRA-35x4000, BXRA-35x7000, BXRA-40E4500, BXRA-40E7500, BXRA-5xC5300, BXRA-5xC9000 Introduction The Bridgelux family of LED Array products delivers high performance, compact and cost-effective solidstate lighting solutions to serve the general lighting market. These products combine the higher efficacy,

Contextual Info: Advance Information Draft T O ft MU9C1485A/L W idePort LANCAMs D IST IN C T IV E C H A R A C T E R IS T IC S G E N E R A L D E S C R IP T IO N The MU9C1485A and MU9C1485L WidePort LANCAMs are 1048 x 64-bit content-addressable memories CAMs , featuring a 32-bit wide interface. This interface doubles the

Tl431 as optocoupler driver

Abstract: toko 10.7 mhz transformer toko if transformer OPTO tl431 toko pulse transformer TOKO 10.7 transformer 748 OP AMP TK75002 103 OPTO COUPLER TOKO 4 mhz transformer
Contextual Info: TK75002 ERROR SIGNAL ISOLATOR FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Eliminates Opto-coupler from Feedback Loop Replaces TL431 and Eliminates Parasitic Zero Pulse Transformer Driver Same Transformer for Any Output Voltage

2M248

Abstract: 10 pin flyback transformer schematics 0071 em 483 12 VOLT 50 AMP smps schematics PE-68411 12 VOLT 16 AMP smps schematics PE-65300 35 VOLT 3 AMP smps schematics transformer for lm2577 jh-45
Contextual Info: TRANSFORMERS POWER MAGNETICS Pulse A TECHNITROL COMPANY TABLE of C O N T E N T S PG F Pow er Transform ers High Power, Low Profile, High Frequency. 1 G ate D riv e Transform ers MOSFET Gate D

Contextual Info: 9 4480 MU C A LANCAM S E M I C O N D U C T O R S LI ;T DRAFT .1 / DISTINCTIVE CHARACTERISTICS 4096 x 64-bit CM OS Content-addressable M em ory CAM with 16-bit LANCAM -com patible I/O New faster com pare speed o f 70 ns Dual configuration register set (Control, Segm ent

Contextual Info: MU9C4480L LANCAM S E M I C O N D U C T O R S LI ;T DRAFT .1 / DISTINCTIVE CHARACTERISTICS 4096 x 64-bit CM OS Content-addressable M em ory CAM with 16-bit LANCAM -com patible I/O Dual configuration register set (Control, Segm ent Control, M ask Register 1, Address Register, and

TL431C

Abstract: tl431ac TL431C Texas Instruments TL431CDR TL431I TL431M TL431MFK tl431mjg crowbar circuit r1lk
Contextual Info: TL431C, TL431AC, TL431I, TL431AI, TL431M ADJUSTABLE PRECISION SHUNT REGULATORS D2410, JULY 1978-REVISED AUGUST 1991 Equivalent Full-Range Temperature D PACKAGE TOP VIEW C o efficient. . . 30 ppm/°C 0.2 Q Typical Output Impedance Sink Current C apability. . . 1 mA to 100 mA

Contextual Info: MOTOROLA Order Number: MC10EP14/D Rev. 0.1,05/1999 Semiconductor Components M C10EP14 S 0 -2 0 , DW SUFFIX P L A S T IC W ID E S O IC P A C K A G E CASE 751D ORDERING INFORMATION f~'i I > r y j! i! f \V J '.W M C 10EP14D W S O IC I v id A jv t1 v"- ' -y^ PIN DESCRIPTION

gal20v8qs

Abstract: GAL20V8QS-15LNC GAL20V8S gal programming algorithm GAL20V8QS-10L cs 2648 GAL20V8QS15LMI WGB 03 HL 006 pAL programming Guide GAL20V8QS10LNC
Contextual Info: GAL20V8QS-10L, -15L 24-Pin 0.8ja EECMOS PLDs General Description Features T h e EECM OS G A L20V8Q S devices are fabricated using N atio n a l’s C S80BEV 0.8/x E lectrically E rasable CM O S pro­ cess. This advanced p rocess m akes N ational's G A L20V 8Q S extrem ely la st, allow ing contro lle d output