DC-10
Abstract: DC-20 FMS2027 FMS2027-000 MIL-HDBK-263
Text: FMS2027 Preliminary Datasheet v2.2 DC–20 GHZ MMIC SPDT NON-REFLECTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Available in die form Non-Reflective design Low Insertion loss 2.2 dB at 20GHz typical Very high isolation 40 dB at 20GHz typical
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FMS2027
20GHz
FMS2027
FMS2027-000
DC-10
DC-20
FMS2027-000
MIL-HDBK-263
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20GHZ
Abstract: FMA3008 MIL-HDBK-263
Text: FMA3008 FMA3008 2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER Die: 2.35mmx1.78mm Product Description Features The FMA3008 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using the
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FMA3008
20GHZ
35mmx1
FMA3008
23dBm
-10dB
FMA3008-000
FMA3008-000SQ
MIL-HDBK-263
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FMS2027
Abstract: FMS2027-000 MIL-HDBK-263
Text: FMS2027 FMS2027 DC-20GHz MMIC LOW LOSS SPDT ABSORPTIVE SWITCH Package Style: Bare Die Product Description Features The FMS2027 is a low loss, high isolation broadband single-pole double-throw Gallium Arsenide switch, designed on the FL05 0.5 m switch process from RFMD. It
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FMS2027
DC-20GHz
FMS2027
20GHz
FMS2027-000
DS090612
FMS2027-000SQ
FMS2027-000
MIL-HDBK-263
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84-1 LMI
Abstract: 22-A114-B FMS2021
Text: FMS2021 Advanced Product Information 1.1 DC- 6 GHz SPDT WLAN GaAs Low Loss Switch Features: ♦ ♦ ♦ ♦ Functional Schematic Suitable for Multi-band WLAN Applications Excellent low control voltage performance Very low Insertion loss <0.7 dB at 6GHz typical
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FMS2021
FMS2021
22-A114-B.
MIL-STD-1686
MILHDBK-263.
84-1 LMI
22-A114-B
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ABLEBONd 84-1
Abstract: Ablebond 84-1 LMISR4 JESD22-B116 G600 TISP61089HDMR-S MIL-STD-883-2019 A101 B116 JESD22 TISP9110LDMR-S
Text: THYRISTOR SURGE PROTECTORS Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team May 6, 2009 PCN Tracking Number 48 Change from Gold to Copper Wire In 2Q08, Bourns qualified a change to the base metal composition of the wires used to bond overvoltage protection chips to the package terminals of the 8-pin SOP 150 mil package.
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JESD22
J-STD-020
JESD22-A113
TISP61089HDMR-S
TISP8200MDR-S
TISP8201MDR-S
TISP9110LDMR-S
ABLEBONd 84-1
Ablebond 84-1 LMISR4
JESD22-B116
G600
TISP61089HDMR-S
MIL-STD-883-2019
A101
B116
JESD22
TISP9110LDMR-S
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Untitled
Abstract: No abstract text available
Text: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing
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FPD750
FPD7500
FPD750
mx750Î
OT343,
12GHz
12GHzlable
FPD750-000
FPD750-000SQ
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Untitled
Abstract: No abstract text available
Text: FMA3058 FMA3058 2GHz to 20GHz BROADBAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA3058 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using our
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FMA3058
20GHz
FMA3058
15dBm
FMA3058-000
FMA3058-000SQ
FMA3058-000S3
DS090609
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Untitled
Abstract: No abstract text available
Text: RFSW2045D RFSW2045D DC to 20GHz GaAs SP4T Switch DC TO 20GHz GaAs SP4T SWITCH Package: Die, 1.91mmx1.33mmx0.10mm Product Description Features RFMD’s RFSW2045D is an absorptive SP4T GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m
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RFSW2045D
20GHz
20GHz
91mmx1
33mmx0
RFSW2045D
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Untitled
Abstract: No abstract text available
Text: DRAFT FMA3008 DRAFT FMA3008 2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER Die: 2.35mmx1.78mm Product Description Features The FMA3008 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using the
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FMA3008
20GHZ
35mmx1
FMA3008
23dBm
-10dB
FMA3008-000
FMA3008-000SQ
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60IDS
Abstract: x-band mmic
Text: FMA246 Preliminary Datasheet v2.3 HIGH GAIN X-BAND MMIC AMPLIFIER FEATURES: • • • • • • • LAYOUT: 8.0 – 14.0 GHz Operating Bandwidth 2.5 dB Noise Figure 30 dB Small-Signal Gain 19 dm Output Power +6V Single Bias Supply Adjustable Operating Current
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FMA246
FMA246
22A114.
MIL-STD-1686
MIL-HDBK-263.
60IDS
x-band mmic
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RFSW2041D
Abstract: No abstract text available
Text: RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m
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RFSW2041D
25GHz
RFSW2041D
91mmx2
11mmx0
20GHz
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20Frequency
Abstract: No abstract text available
Text: FMS2029 Production Datasheet v4.0 DC–20 GHZ MMIC SPST ABSORPTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Low insertion loss: 2.2 dB at 20 GHz High isolation: 50 dB at 20 GHz Absorptive input and output in off-state Excellent low control voltage performance
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FMS2029
FMS2029
22-A114.
MIL-STD1686
MIL-HDBK-263.
FMS2029-000-WP
20Frequency
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FMA2029
Abstract: No abstract text available
Text: FMA2029 Datasheet v2.2 DC–20 GHZ MMIC SPST NON-REFLECTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Available in die form Both ports terminated in 50Ω in off-state Low Insertion loss 2.2dB at 20 GHz typical Very high isolation 50dB at 20 GHz typical
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FMA2029
FMS2029
22A114.
MIL-STD-1686
MIL-HDBK-263.
FMS2029-000
FMA2029
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sumitomo G700
Abstract: sumitomo epoxy 1076 0038 tsop ablebond Sumitomo 1076 8361J Compound c7025 Die Attach epoxy stamping sumitomo g700 type g700 mold compound
Text: 10/29/2004 PACKAGE RELIABILITY REPORT FOR 32 TSOP 8mm Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : ken.wendel@dalsemi.com
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nitrogen coupling
Abstract: FMS2034 MIL-HDBK-263
Text: FMS2034 Preliminary Datasheet v2.1 SP7T Ultra-linear GaAs WEDGE Antenna Switch FEATURES: PRODUCT DESCRIPTION: • World-class IMD performance: -122 dBm at 2.14GHz • 2 Tx, 4 Rx ports, 1 TRx WCDMA , • Low Tx insertion loss: 0.6 dB at 900 MHz, 0.8 dB at 1.8 GHz
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FMS2034
14GHz
FMS2034
FMS2034-000-WP
FMS2034-000-EB
nitrogen coupling
MIL-HDBK-263
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ESD 141
Abstract: FMS2022 B1142 capacitor 100pF 0603
Text: Preliminary Data Sheet FMS2022 2.1 DC–4 GHz MMIC SP4T Absorptive Switch Functional Schematic Features: OUT1 ¨ ¨ ¨ ¨ ¨ Available as known good die Broadband performance Low Insertion loss <1.4 dB at 4 GHz typical High isolation >28 dB at 4 GHz typical
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FMS2022
FMS2022
22-A114-B.
MIL-STD-1686
MILHDBK-263.
ESD 141
B1142
capacitor 100pF 0603
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DC-20
Abstract: FMS2023 FMS2023-000-WP
Text: FMS2023 DC–20 GHZ MMIC LOW LOSS SPST ABSORPTIVE SWITCH FEATURES: • • • • • Pre-Production Datasheet v2.5 FUNCTIONAL SCHEMATIC: Low insertion loss: 1 dB at 20 GHz High isolation: 50 dB at 20 GHz Absorptive output in off-state Excellent low control voltage performance
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FMS2023
FMS2023
FMS2023-000-WP
DC-20
FMS2023-000-WP
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E8363B
Abstract: E4446A E8257D JESD22-A114 E4446A PSA VA108 RFSW2043D
Text: RFSW2043D RFSW2043D DC to 20GHz GaAs SPDT Switch DC TO 20GHz GaAs SPDT SWITCH Package: Die, 1.33mmx1.11mmx0.10mm Product Description Features RFMD’s RFSW2043D is an absorptive SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m
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RFSW2043D
20GHz
20GHz
33mmx1
11mmx0
RFSW2043D
E8363B
E4446A
E8257D
JESD22-A114
E4446A PSA
VA108
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STM, mold compound
Abstract: Texas Instruments 7410 Precon Texas Instruments Philippines UA7805CKTE TEXAS INSTRUMENTS, Mold Compound
Text: TEXAS INSTRUMENTS Final Notification for 3 KTE and 5 KTG PowerFLEX Package to be Built at PSI Technologies, Inc. in Manila, Philippines December 17, 1998 Abstract Texas Instruments, Inc. Standard Linear and Logic Products SLL has qualified PSI Technologies,
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DC-20
Abstract: FMS2027 FMS2027-000 MIL-HDBK-263
Text: FMS2027 Pre-Production Datasheet v3.0 DC–20 GHZ MMIC SPDT ABSORPTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Low insertion loss: 2.1 dB at 20GHz High isolation: 42 dB at 20GHz Absorptive output in off-state Excellent low control voltage performance
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FMS2027
20GHz
FMS2027
FMS2027-000
DC-20
FMS2027-000
MIL-HDBK-263
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SMD transistor zc
Abstract: SN74LVCxxx 74LVXXX Diode SMD SJ 24
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MC74LCX158 Low-Voltage CMOS Quad 2-Input Multiplexer With 5V-Tolerant Inputs Inverting The MC74LCX158 is a high performance, quad 2–input inverting multiplexer operating from a 2.7 to 3.6V supply. High impedance TTL
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MC74LCX158
BR1339
SMD transistor zc
SN74LVCxxx
74LVXXX
Diode SMD SJ 24
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LCX240
Abstract: Motorola logic 765 RT
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low-Voltage CMOS Quad 2-Input AND Gate MC74LCX08 With 5V-Tolerant Inputs The MC74LCX08 is a high performance, quad 2–input AND gate operating from a 2.7 to 3.6V supply. High impedance TTL compatible inputs significantly reduce current loading to input drivers while TTL
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MC74LCX08
MC74LCX08
BR1339
LCX240
Motorola logic
765 RT
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IDT bn marking diagram
Abstract: SMD MARKING CODE SAB Motorola logic TRANSISTOR SMD MARKING CODE WM SAB 2016
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low-Voltage CMOS Octal Transceiver/Registered Transceiver MC74LCX646 With 5V-Tolerant Inputs and Outputs 3-State, Non-Inverting The MC74LCX646 is a high performance, non–inverting octal transceiver/registered transceiver operating from a 2.7 to 3.6V supply.
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MC74LCX646
BR1339
IDT bn marking diagram
SMD MARKING CODE SAB
Motorola logic
TRANSISTOR SMD MARKING CODE WM
SAB 2016
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marking code 8 lead soic package
Abstract: toshiba smd marking code transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low-Voltage CMOS Quad Buffer MC74LCX125 With 5V-Tolerant Inputs and Outputs 3-State, Non-Inverting The MC74LCX125 is a high performance, non–inverting quad buffer operating from a 2.7 to 3.6V supply. High impedance TTL compatible
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MC74LCX125
BR1339
marking code 8 lead soic package
toshiba smd marking code transistor
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