LMISR4 Search Results
LMISR4 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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DC-10
Abstract: DC-20 FMS2027 FMS2027-000 MIL-HDBK-263
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FMS2027 20GHz FMS2027 FMS2027-000 DC-10 DC-20 FMS2027-000 MIL-HDBK-263 | |
20GHZ
Abstract: FMA3008 MIL-HDBK-263
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FMA3008 20GHZ 35mmx1 FMA3008 23dBm -10dB FMA3008-000 FMA3008-000SQ MIL-HDBK-263 | |
FMS2027
Abstract: FMS2027-000 MIL-HDBK-263
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FMS2027 DC-20GHz FMS2027 20GHz FMS2027-000 DS090612 FMS2027-000SQ FMS2027-000 MIL-HDBK-263 | |
84-1 LMI
Abstract: 22-A114-B FMS2021
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FMS2021 FMS2021 22-A114-B. MIL-STD-1686 MILHDBK-263. 84-1 LMI 22-A114-B | |
ABLEBONd 84-1
Abstract: Ablebond 84-1 LMISR4 JESD22-B116 G600 TISP61089HDMR-S MIL-STD-883-2019 A101 B116 JESD22 TISP9110LDMR-S
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JESD22 J-STD-020 JESD22-A113 TISP61089HDMR-S TISP8200MDR-S TISP8201MDR-S TISP9110LDMR-S ABLEBONd 84-1 Ablebond 84-1 LMISR4 JESD22-B116 G600 TISP61089HDMR-S MIL-STD-883-2019 A101 B116 JESD22 TISP9110LDMR-S | |
Contextual Info: FPD750 FPD7500.5 W Power pHEMT 0.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx750μm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing |
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FPD750 FPD7500 FPD750 mx750Î OT343, 12GHz 12GHzlable FPD750-000 FPD750-000SQ | |
Contextual Info: FMA3058 FMA3058 2GHz to 20GHz BROADBAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA3058 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using our |
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FMA3058 20GHz FMA3058 15dBm FMA3058-000 FMA3058-000SQ FMA3058-000S3 DS090609 | |
Contextual Info: RFSW2045D RFSW2045D DC to 20GHz GaAs SP4T Switch DC TO 20GHz GaAs SP4T SWITCH Package: Die, 1.91mmx1.33mmx0.10mm Product Description Features RFMD’s RFSW2045D is an absorptive SP4T GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m |
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RFSW2045D 20GHz 20GHz 91mmx1 33mmx0 RFSW2045D | |
Contextual Info: DRAFT FMA3008 DRAFT FMA3008 2GHZ TO 20GHZ BROADBAND MMIC AMPLIFIER Die: 2.35mmx1.78mm Product Description Features The FMA3008 is a high performance 2GHz to 20GHz Gallium Arsenide monolithic travelling wave amplifier. It is suitable for use in broadband communication, instrumentation, and electronic warfare applications. The die is fabricated using the |
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FMA3008 20GHZ 35mmx1 FMA3008 23dBm -10dB FMA3008-000 FMA3008-000SQ | |
60IDS
Abstract: x-band mmic
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FMA246 FMA246 22A114. MIL-STD-1686 MIL-HDBK-263. 60IDS x-band mmic | |
RFSW2041DContextual Info: RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m |
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RFSW2041D 25GHz RFSW2041D 91mmx2 11mmx0 20GHz | |
20FrequencyContextual Info: FMS2029 Production Datasheet v4.0 DC–20 GHZ MMIC SPST ABSORPTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Low insertion loss: 2.2 dB at 20 GHz High isolation: 50 dB at 20 GHz Absorptive input and output in off-state Excellent low control voltage performance |
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FMS2029 FMS2029 22-A114. MIL-STD1686 MIL-HDBK-263. FMS2029-000-WP 20Frequency | |
FMA2029Contextual Info: FMA2029 Datasheet v2.2 DC–20 GHZ MMIC SPST NON-REFLECTIVE SWITCH FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Available in die form Both ports terminated in 50Ω in off-state Low Insertion loss 2.2dB at 20 GHz typical Very high isolation 50dB at 20 GHz typical |
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FMA2029 FMS2029 22A114. MIL-STD-1686 MIL-HDBK-263. FMS2029-000 FMA2029 | |
sumitomo G700
Abstract: sumitomo epoxy 1076 0038 tsop ablebond Sumitomo 1076 8361J Compound c7025 Die Attach epoxy stamping sumitomo g700 type g700 mold compound
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nitrogen coupling
Abstract: FMS2034 MIL-HDBK-263
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FMS2034 14GHz FMS2034 FMS2034-000-WP FMS2034-000-EB nitrogen coupling MIL-HDBK-263 | |
ESD 141
Abstract: FMS2022 B1142 capacitor 100pF 0603
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FMS2022 FMS2022 22-A114-B. MIL-STD-1686 MILHDBK-263. ESD 141 B1142 capacitor 100pF 0603 | |
DC-20
Abstract: FMS2023 FMS2023-000-WP
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FMS2023 FMS2023 FMS2023-000-WP DC-20 FMS2023-000-WP | |
E8363B
Abstract: E4446A E8257D JESD22-A114 E4446A PSA VA108 RFSW2043D
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RFSW2043D 20GHz 20GHz 33mmx1 11mmx0 RFSW2043D E8363B E4446A E8257D JESD22-A114 E4446A PSA VA108 | |
STM, mold compound
Abstract: Texas Instruments 7410 Precon Texas Instruments Philippines UA7805CKTE TEXAS INSTRUMENTS, Mold Compound
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DC-20
Abstract: FMS2027 FMS2027-000 MIL-HDBK-263
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FMS2027 20GHz FMS2027 FMS2027-000 DC-20 FMS2027-000 MIL-HDBK-263 | |
SMD transistor zc
Abstract: SN74LVCxxx 74LVXXX Diode SMD SJ 24
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MC74LCX158 BR1339 SMD transistor zc SN74LVCxxx 74LVXXX Diode SMD SJ 24 | |
LCX240
Abstract: Motorola logic 765 RT
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MC74LCX08 MC74LCX08 BR1339 LCX240 Motorola logic 765 RT | |
IDT bn marking diagram
Abstract: SMD MARKING CODE SAB Motorola logic TRANSISTOR SMD MARKING CODE WM SAB 2016
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MC74LCX646 BR1339 IDT bn marking diagram SMD MARKING CODE SAB Motorola logic TRANSISTOR SMD MARKING CODE WM SAB 2016 | |
marking code 8 lead soic package
Abstract: toshiba smd marking code transistor
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MC74LCX125 BR1339 marking code 8 lead soic package toshiba smd marking code transistor |