LNA MARKING CODE R0 Search Results

Contextual Info: BGA713N7 Single-Band UMTS LNA 700, 800 MHz Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

Contextual Info: BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

Contextual Info: BGA777N7 Single-Band UMTS LNA 2300 - 2700 MHz Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BGA711N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: CMY191 GaAs MMIC Preliminary Datasheet • • • • • • • • Ultralinear Mixer with integrated high IP3i LNA and LO-Buffer for PCS CDMA receiver applications.

Contextual Info: MGA-65606 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-65606 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA with Bypass/ Shutdown mode. The LNA has low noise and high linearity

Germanium power

Contextual Info: Data Sheet, Version 1.2, March 2006 BGA615L7 Silicon Germanium GPS Low Noise Amplifier Automotive and Industrial Silicon Discretes N e v e r s t o p t h i n k i n g . Edition 2006-03-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München

MGA-65606

Contextual Info: MGA-65606 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-65606 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA with Bypass/ Shutdown mode. The LNA has low noise and high linearity

Contextual Info: Data Sheet, Rev.1.3, February 2007 BGA615L7 Silicon Germanium GPS Low Noise Amplifier RF & Protection Devices Edition 2007-02-12 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

FR4 Prepreg

Abstract: data sheet germanium diode smd prepreg 1650M AN091 infineon MARKING BS INFINEON BGA615L7 smd marking s22 BGA615 infineon marking BS
Contextual Info: D a t a S he et , R e v . 1 . 3 , F e b . 2 00 7 B G A 6 15 L7 Silicon Germanium GPS Low Noise Amplifier S m a l l S i g n a l D i s c r et e s Edition 2007-02-12 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2007.

LNA MARKING 4F

Abstract: 7313 28 pin MGA-645T6 marking 6 180 722 10-pin A004R
Contextual Info: MGA-645T6 Low Noise Amplifier with Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-645T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass/ Shutdown mode. The LNA has low noise and

BGA615L7

Abstract: BGA615 1650M data sheet germanium diode smd FR4 Prepreg GERMANIUM prepreg LNA marking CODE R0 LNA marking R0 FR4 Prepreg for RF PCB
Contextual Info: Data Sheet, Rev.1.3, February 2007 BGA615L7 Silicon Germanium GPS Low Noise Amplifier RF & Protection Devices Edition 2007-02-12 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

LNA marking CODE R0

Contextual Info: BGA715N7 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 1.0, 2013-01-29 Preliminary RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG

Contextual Info: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-30 RF & Protection Devices Edition 2013-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

MGA-64606

Contextual Info: MGA-64606 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-64606 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass/ Shutdown mode. The LNA has low noise and high

MGA-64606-BLKG

Abstract: MGA-64606 MGA-64606-TR1G
Contextual Info: MGA-64606 Low Noise Amplifier with switchable Bypass/Shutdown Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-64606 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass/ Shutdown mode. The LNA has low noise and high

RO4850

Abstract: 113 marking code transistor ROHM A004R MCH155 MGA-655T6 c1005* MCH155 MCR 052 PIN 100
Contextual Info: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’

Contextual Info: DATA SHEET SKY65373-11: 1710 to 1785 MHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure  Low noise, high linearity systems  Macro base stations  Small cells VGC

sky77506

Abstract: S2473
Contextual Info: DATA SHEET SKY65374-11: 1850 to 1915 MHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure  Low noise, high linearity systems  Macro base stations  Small cells RF_OUT

Contextual Info: MGA-637P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-637P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the

capacitor .22K

Contextual Info: MGA-635T6 GPS Low Noise Amplifier with Variable Bias Current and Shutdown Function Data Sheet Description Features Avago Technologies’ MGA-635T6 is a LNA designed for GPS/ISM/Wimax applications in the 0.9-2.4 GHz frequency range. The LNA uses Avago Technologies’s

Contextual Info: MGA-638P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-638P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the

Contextual Info: DATA SHEET SKY65375-11: 1.92 to 1.98 GHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure  Low noise, high linearity systems  Macro base stations  Small cells RF_OUT