LOW POWER SRAM 64K Search Results

MoSys

Abstract: MC803128K32 pipeline burst
Contextual Info: MC803128K32 128Kx32 Pipeline Burst SRAM MOSYS • High performance, low power pipeline burst SRAM Overview The MoSys MC803128K32 is a high performance, low power pipeline-burst-SRAM PBSRAM . Fabricated using an advanced low power, high performance CMOS process, the MoSys MC803128K32 is

GVT7164B36

Abstract: 7164b36
Contextual Info: GALVANTECH, INC. GVT7164B36 64K X 36 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM 64K x 36 SRAM +3.3V POWER SUPPLY, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • The Galvantech Synchronous Burst SRAM family employs high-speed, low power CMOS designs using

AS6C1016

Abstract: sram 64k 64k x 8 sram
Contextual Info: OCTOBER 2007 January 2007 AS6C1016 X 8CMOS BIT LOW POWER CMOS SRAM 64K X 16 BIT LOW512K POWER SRAM FEATURES GENERAL DESCRIPTION Fast access time : 55ns Low power consumption: Operating current : 20mA TYP. Standby current : 2 A (TYP.) Single 2.7V ~ 5.5V power supply

Contextual Info: PRELIMINARY I^ IIC R O N MT8LS6432 64K X 32 SRAM MODULE SRAM MODULE 64K X 32 SRAM LOW VOLTAGE FEA TU RES High speed: 15,20 and 25ns High-performance, low-power CMOS process Single +3.3V + 0.3V power supply _ _ 5V-tolerant I /O Easy memory expansion with CE and OE options

AS6C1016

Abstract: AS6C1016-55ZIN
Contextual Info: OCTOBER 2007 January 2007 AS6C1016 X8 BIT SRAM LOW POWER CMOS SRAM 64K X 16 BIT LOW512K POWER CMOS FEATURES GENERAL DESCRIPTION Fast access time : 55ns Low power consumption: Operating current : 20/18mA TYP. Standby current : 2 A (TYP.) Single 2.7V ~ 5.5V power supply

Contextual Info: JUL i 4 ’«S3 PRELIMINARY MICRON I 64K St MíCOKUlICIOR MC SRAM MODULE X MT8LS6432 32 SRAM MODULE 64Kx 32 SRAM LOW VOLTAGE FEATURES • • • • • • • • High speed: 17,20,25, 30 and 35ns High-performance, low-power CMOS process Single +3.3V ± 0.3V power supply

Contextual Info: M T5LC 2564 64K X 4 SRAM |V/|ICRON 64K X 4 SRAM SRAM LOW VOLTAGE PIN ASSIGNMENT Top View • All I / O pins are 5V tolerant • High speed: 1 2,15, 20, 25 and 35ns • High-perform ance, low-power, CM OS double-metal process • Single +3.3V ±0.3V power supply

S1D13501

Abstract: QFP14-80 MASKROM QFP14-80 epson TQFP15-100 S1L50000 S1X55033 S1X55053 S1D13502 S1X55103
Contextual Info: PF1227-01 S1X50000 Series S1X50000 Series High Speed/Low Power Embedded Array ● 1P SRAM/2P SRAM/Mask ROM mounted ● Two types available: High-speed type and the low-power-consumption cell type ● Eight models available with different sizes of SRAM/MaskROM

Contextual Info: M IC R D N I MT5LC2565 64K X 4 SRAM SEMICONDUCTOR TIC SRAM 64K x 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I/ O pins are 5V tolerant • High speed: 1 2 ,1 5 ,2 0 and 25 • High-performance, low-power, CM OS double-metal process • Single +3.3V ±0.3V power supply

Contextual Info: MC80464K32, MC804128K3? 64Kx32, 128Kx32 Flow-Through ❖ M o Sys* Synchronous Burst SRAM * High performance, low power flofr-through SRAM • Ultra low power for high capacity applications * High performance • 50-83 MHz Speed grades • 2-1-1-1 Burst Read

M48Z59

Abstract: M48Z59Y SOH28
Contextual Info: M48Z59 M48Z59Y 64Kb 8K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY MICROPROCESSOR POWER-ON RESET (Valid even during battery back-up mode) AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION

Contextual Info: M IC R O N I 64K ¿FUICQNDUCTOR INC SRAM MT5C2565 X 4 SRAM 64K X 4 SRAM FEATURES • High speed: 10,12,15,20 and 25 • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options

M48Z59

Abstract: M48Z59Y SOH28 AI00962
Contextual Info: M48Z59 M48Z59Y 64Kb 8K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY MICROPROCESSOR POWER-ON RESET (Valid even during battery back-up mode) AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES

Contextual Info: HY62UF16101 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16101 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101 uses high performance full CMOS process technology and designed for high speed low power circuit

Contextual Info: M48Z58 M48Z58Y 64Kb 8K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES (VPFD = Power-fail Deselect Voltage):

HY62UF16101LLM

Contextual Info: HY62UF16101 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16101 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101 uses high performance full CMOS process technology and designed for high speed low power circuit

Contextual Info: HY62UF16100 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16100 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16100 uses high performance full CMOS process technology and designed for high speed low power circuit

A1526

Abstract: 64K X 4 SRAM
Contextual Info: M T5LC2565 64K X 4 SRAM M IC R O N SRAM 64K X 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I/O pins are 5V tolerant • High speed: 1 2 ,15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +3.3V +0.3V power supply • Easy memory expansion with CE and OE options

Contextual Info: HY62QF16100 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16100 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62QF16100 uses high performance full CMOS process technology and designed for high speed low power circuit

Contextual Info: MICRON TECHNOLOGY INC SSE D I^ IIC Z R O N blllSMT 0003T73 bT3 64K SRAM MODULE X IMRN MT4S6416 16 SRAM MODULE 64Kx 16 SRAM FEATURES • High speed: 20*, 25 and 30ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply

M48T59

Abstract: M48T59Y SOH28
Contextual Info: M48T59 M48T59Y 64Kb 8K x 8 TIMEKEEPER SRAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY FREQUENCY TEST OUTPUT for REAL TIME CLOCK AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES

M48Z58

Abstract: M48Z58Y SOH28
Contextual Info: M48Z58 M48Z58Y 64Kb 8K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES (VPFD = Power-fail Deselect Voltage):

Contextual Info: High Speed Super Low Power SRAM CS16LV10243 64K-Word By 16 Bit Revision History Rev. No. 1.0 History Initial issue 1 Issue Date Jan.17,2005 Remark Rev. 1.0 Chiplus reserves the right to change product or specification without notice. High Speed Super Low Power SRAM

DS1225 circuit diagram

Abstract: DS1225 M48Z08 M48Z18 SOH28 DS1225 date code
Contextual Info: M48Z08 M48Z18 64Kb 8K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES