MT5C2565 Search Results

Contextual Info: p il C IR O N 64K MT5C2565 X 4 SR A M 64K X 4 SRAM SRAM FEATURES PIN A SSIG N M E N T Top View • High speed: 10*, 12*, 15, 20, 25, and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options

Contextual Info: MICRON TECHNOLOGY INC 55E D • blllSMT OOGSbE'i bBfl MflRN MT5C2565 883C 64K X 4 SR AM 1IÍZ R O ÍS J MILITARY SRAM 64K X 4 SRAM AVAILABLE AS MILITARY SPECIFICATIONS • • • • PIN ASSIGNMENT Top View SMD 5962-89524 JAN M 38510,293 MIL-STD-883, Class B

Contextual Info: ♦ P1ICR0N T E C H N O L O G Y INC SSE ]> • b l l l S M ^ 0 0 G 3 4 0 4 bOl ■ MRN M IC R O N 64K 'T SRAM MT5C2565 X 4 SRAM '^ V b A D 64K X 4 SRAM FEATURES • High speed: 10*, 12’ , 15,20,25, and 35ns • High-performance, low-power, CMOS double-metal

Contextual Info: M IC R O N 64K SRAM MT5C2565 X 4 SRAM 64Kx 4 SRAM FEATURES • High speed: 10,12,15, 20 and 25 • High-performance, low-power, CMOS double-metal process • Single +5V ±10% pow er supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL-compatible

Contextual Info: M IC R O N I 64K ¿FUICQNDUCTOR INC SRAM MT5C2565 X 4 SRAM 64K X 4 SRAM FEATURES • High speed: 10,12,15,20 and 25 • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options

smd transistor GY

Contextual Info: MICRON T ECH NOLOGY INC 17E D • blllSm MICRON I OOOlflbE t.' ■ MT5C2565 883C l M ii'<OGT INC MILITARY SRAM 64K x 4 SRAM WITH OUTPUT ENABLE -— AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT (Top View • SMD 89524

Contextual Info: AUSTIN SEMICONDUCTOR, INC. MILITARY SRAM MT5C2565 883C 64K X 4 SRAM 64Kx 4 SRA M WITH OUTPUT ENABLE AVAILABLE AS MILITARY SPECIFIC A TIO N S PIN ASSIGNMENT Top View • M IL-STD -883, C la ss B • R a d ia tio n to le ra n t (c o n su lt factory) 28-Pin DIP

smd ya

Abstract: xa smd LA smd
Contextual Info: a s ì? M ' - r p v S f 'M I« « i li Fï !N > ^ 0 R E F E R E N C E GUIDE AUSTIN SEMICONDUCTOR APPROVED SM D’S (Continued) ASI PART HUMBER MT5C1009 MT5C1001 MT5C1001L (LVDR) MT5C2561 MT5C2564 MT5C2564L (LVDR) MT5C2565L (LVDR) MT5C2568 SMD SPEED (ns)

OC A3

Contextual Info: MT5C2565 SRAM 64K X 4 SRAM FEATURES PIN ASSIGNMENT Top View • H igh speed: 15, 20, 25, 3 0 ,3 5 , and 45ns • H igh-perform ance, low -pow er, CM O S double-m etal process • Single +5V ±10% pow er supply • Easy m em ory expansion w ith CE and OE options

Contextual Info: MT5C2565 883C 64K x 4 SRAM AUSTIN SEMICONDUCTOR, INC. 64K x 4 SRAM SRAM WITH OUTPUT ENABLE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 28-Pin DIP (D-15) Ultra high speed 12, 15ns High-speed: 20, 25, 35 and 45ns

dh 321

Abstract: SMD a7 S smd a10 SMD a7 Transistor smd diode marking a6 smd marking A8 MT5C2565 mt5c2565 883
Contextual Info: SRAM MT5C2565 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 28-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access

Contextual Info: MICRON 64K SRAM MT5C2565 X 4 SRAM 64K X 4 SRAM FEATURES • High speed: 1 0 ,1 2 ,1 5 , 20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL-compatible

Contextual Info: A s p AUSTIN SEMICONDUCTOR. INC. SRAM MT5C2565 883C 64K X 4 SRAM 64K X 4 SRAM WITH OUTPUT ENABLE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 FEATURES • • • • • Ultra high speed 12,15ns High-speed: 20, 25, 35 and 45ns

MT5C2565EC-25

Contextual Info: SRAM MT5C2565 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 28-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access

micron sram

Abstract: taa 723 MT5C2565
Contextual Info: OBSOLETE 3/1/95 MT5C2565 64K x 4 SRAM SRAM 64K x 4 SRAM WITH OUTPUT ENABLE FEATURES • High speed: 10, 12, 15, 20 and 25 • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with ?C/E and ?O/E options

Contextual Info: MICRON SEMICONDUCTOR INC fc.7E D • b i l l i g □ □ C H 2 ciH bEE ■ PIRN MT5C2565 64K X 4 SRAM l ^ i c n o N SRAM 64K X 4 SRAM FEATURES PIN ASSIGNMENT Top View • High speed: 1 0 ,1 2 ,1 5 ,2 0 ,2 5 and 35ns • High-performance, low-power, CM OS double-m etal

Contextual Info: Al S I !!\ S E M I C O N D U i I'OR. INC SRAM MT5C2565 883C 64K X 4 SR AM 64Kx 4 SRAM WITH OUTPUT ENABLE AVAILABLE AS M ILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • S M D 5 9 6 2 -8 9 5 2 4 • M IL -S T D -8 8 3 FEATURES 28-Pin DIP (D-15) AO A1 A3

43211

Abstract: MT5C2565 smd a10 SMD a7 Transistor smd marking A8 5962-8952403XX A12 smd MT5C256
Contextual Info: SRAM MT5C2565 Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View • SMD 5962-89524 • MIL-STD-883 28-Pin DIP (C) (300 MIL) FEATURES 3 2 1 28 27 • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access

Contextual Info: |U |IC R O N M T8S6432 64K X 32 SR AM M O D U LE SRAM MODULE 64K X 32 SRAM FEATURES • High speed: 12,15, 20 and 25ns • High-performance, low-power CM OS double-metal process _ • Single +5V +10% power supply • Easy m emory expansion w ith CE and OE functions

km681001j-20

Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
Contextual Info: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

Contextual Info: MI CR ON T E C H N O L O G Y INC b lllS M T SSE D I^ICRQN 64K I FIRN O O O B S a 11! T b O X MT8S6432 32 SRAM MODULE -M fc-Z .V i4 SRAM MODULE FEATURES • • • • • • • • 64K X 32 SRAM , High speed: 15*, 20 25,30 and 35ns High-performance, low-power CMOS process

Contextual Info: M I CR ON T E C H N O L O G Y Bfl E D INC i>jypiw«A.u b lllS M * * GQOSTbS T • fIRN ,7 ì ^ - 2 > / i n w rr? " REPLACES: MT85C3264 64K X 32 SRAM SRAM MODULE . FEATURES Industry compatible pinout High speed: 20ns, 25ns, 30ns, 35ns and 45ns High-performance, low-power, CMOS process