LOW-POWER SILICON NPN Search Results

MJE130

Abstract: mje135 MJE230 MJE220 MJE221 MJE222 MJE225 MJE231 MJE235 200 watts audio amp power transistors pnp
Contextual Info: MJE220 thru MJE225 NPN SILICON MJE230 thru MJE235 PNP COMPLEMENTARY PLASTIC SILICON POWER TRANSISTORS 4 AMPERE POWER TRANSISTORS . . . designed for low power audio amplifier and low current, high­ speed switching applications. • COMPLEMENTARY SILICON

2SD560

Abstract: nec 2sd560 2sd560 equivalent NEC RELAY
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is

MJE200

Abstract: MJE210G 1N5825 MJE200G MJE210 MJE210T MJE210TG MSD6100 to225
Contextual Info: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features http://onsemi.com 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

Contextual Info: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features http://onsemi.com 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

MJE243G

Abstract: to225 PD15120 MJE253 MJE253G MJE243 to-225 pd 242
Contextual Info: MJE243 - NPN, MJE253 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low-current, high-speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL  DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier.  FEATURES * Low frequency power amplifier 

mje253

Contextual Info: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS

290A transistor

Abstract: 2SD667 transistor 2sd667
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL „ DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. „ FEATURES * Low frequency power amplifier * Halogen Free

MJE243

Abstract: MJE243G 200 watts audio amp power transistors circuit diagram MJE243-D 1N5825 MJE253 MJE253G MSD6100
Contextual Info: MJE243 - NPN, MJE253 - PNP Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS

MJE243G

Abstract: MJE-253 MJE243 MJE253 1N5825 MJE253G MSD6100 200 watts audio amp power transistors circuit diagram mje253 transistor
Contextual Info: MJE243 − NPN, MJE253 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

MJE200G

Abstract: MJE200 MJE210 MJE210G MJE210T MJE210TG to225
Contextual Info: MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS, 15 WATTS

290A transistor

Abstract: transistor 2sd667 2SD667
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD667 NPN SILICON TRANSISTOR SILICON NPN EPITAXIAL „ DESCRIPTION The UTC 2SD667 is a NPN epitaxial silicon transistor, which can be used as a low frequency power amplifier. „ FEATURES * Low frequency power amplifier „ ORDERING INFORMATION

MMT806

Abstract: MMT808
Contextual Info: MMT806 SILICON M ICROM INIATURE NPN SILICON ANNULAR TRANSISTOR MICRO POWER SER IES NPN SILICON SWITCHING TRANSISTOR . . . designed for high-speed, low-power switching circuits. • DC Current Gain @ Ultra Low C urrent— • High Current'Gain — Bandwidth Product —

Contextual Info: MJE243G NPN , MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

Contextual Info: MJE243G NPN , MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • • • • • • 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

1N5825

Abstract: MJE200 MJE200G MJE210 MJE210G MJE210T MJE210TG MSD6100
Contextual Info: MJE200 − NPN, MJE210 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

NEC 2501

Abstract: 2SC4536-T1 ic nec 2501 2501 NEC 2SC4536 nec RF package SOT89 qs marking sot-89
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features

2SD1581

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and low power loss. This transistor is

PNP Transistor DPAK

Contextual Info: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS

MJD200RL

Abstract: 1N5825 MJD200 MJD200G MJD200RLG MJD200T4 MJD210 MSD6100
Contextual Info: MJD200 NPN MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications http://onsemi.com Designed for low voltage, low−power, high−gain audio amplifier applications. SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS

Contextual Info: MJE200G NPN , MJE210G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • • • • • 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON

1N5825

Abstract: MJD200 MJD210 MSD6100
Contextual Info: ON Semiconductort NPN Complementary Plastic Power Transistors MJD200 PNP MJD210 NPN/PNP Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS . . . designed for low voltage, low–power, high–gain audio amplifier

1N5825

Abstract: MJD200 MJD210 MSD6100
Contextual Info: ON Semiconductort NPN Complementary Plastic Power Transistors MJD200 PNP MJD210 NPN/PNP Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS . . . designed for low voltage, low–power, high–gain audio amplifier

Contextual Info: MJE200 NPN , MJE210 (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • • • • • 5.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON