LR301 Search Results

Contextual Info: polyfet rf devices LR301 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

tag 8820

Abstract: LR3000 FGR31 LR3910A lr3010hc-20 floating point handling MIPS FPA LR3000A i1991 CLDCC
Contextual Info: LSI LOGIC LR3010/LR3010A Floating-Point Accelerator Preliminary Introduction The LR3010 and LR3010A Floating-Point Accelerators FPAs from LSI Logic Corporation implement the floating-point coprocessor architecture of MIPS M icrosystem s in high­ performance CMOS. Both FPAs are in full

Contextual Info: polyfet rf devices LR301 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices LR301 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

LR301

Abstract: LDMOS PFS 3000
Contextual Info: polyfet rf devices LR301 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

10NF

Abstract: 22PF 47UF LR301 290-320MHz PFC16 TB-185 tu 12 f
Contextual Info: TB-185 LR301 F=300 MHz; VDS=28V IDQ=1.2A 350 19 18 280 17 Pout 210 16 15 1dB compression = 200W 140 14 Gain 13 70 Efficiency @ 200W= 50% 12 11 4 8 12 16 20 Pin in Watts TB-185 LR301 VDS=28Vdc, Idq=1.2A 40 35 30 Pout fixed @ 250W 25 Gain 20 15 290 295 300 305

TB185

Contextual Info: February 1, 2012 TB185 Frequency=290-320MHz Pout=200W Gain=16dB Vds=28Vdc Idq=1.2A LR301 PH : 805 484-4210 FAX :( 805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 TB185 Gain/Efficiency vs Frequency: Vds=28Vdc, Idq=1.2A, Pout=250W

Contextual Info: polyfet rf devices LR301 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: LSI LOGIC LR3010/LR3010A Floating-Point Accelerator Preliminary Introduction The LR3010 and LR3010A Floating-Point A ccelerators FPAs from LSI Logic Corporation implement the floating-point coprocessor architecture of MIPS M icrosystem s in highperformance CMOS. Both FPAs are in full

Contextual Info: Chapter 6: Specifications This chapter contains the electrical specifications and related timing information for the LR3010 and LR3010A coprocessors. The two coprocessors are nearly identical, but only the LR3010A is capable of operating at 33.33 MHz, so all references in this chapter to 33.33 MHz operation apply only to the

LR301

Contextual Info: polyfet rf devices LR301 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices LR301 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

STK 407 - 040

Abstract: stk 407 070 LP 8029 m4 stk 407 090 LM 7804 STK 407 040 LM 7801 LP 8029 l2 9SMnPb28k makrolon 8030
Contextual Info: Miniatur-Abstandhalter Miniatur-Abstandhalter LPR 8000-Mini ff LPR 8001-70-Mini ff Miniature PCB Spacer r Selbstverriegelung wiederlösbar durch Zurückdrücken der Nase. Self-locking and releasable. r Montage: / Mounting: Bohrungen von 3,2 mm; max. 1,6 mm Materialstärke.

k535

Abstract: CDB22 LR3000 cxl tuner diagram interfacing of memory devices with 8086 LB1K LR3202A LR3203 LR3205 LR32D04
Contextual Info: Chapter 3 LR3202A L-Bus Controller This chapter describes the LR3202A L-Bus Controller. Chapter 3 is organized into these sections: • General Description ■ Configuring the LR3202A ■ Programming the System Control Registers ■ Signal Definitions ■ L-Bus Operation

LR3000

Abstract: LR3000A
Contextual Info: Chapter 3 LR3202A L-Bus Controller This chapter describes the LR3202A L-Bus Controller. Chapter 3 is organized into these sections: • General Description ■ Configuring the LR3202A ■ Programming the System Control Registers ■ Signal Definitions ■ L-Bus Operation

RST02

Abstract: LR2000 LR3000
Contextual Info: Chapter 2 LR3201 Reset/Interrupt Controller This chapter describes the LR3201 Reset/Interrupt Controller. This chapter is oiganized into these sections: • General Description ■ Reset Operation ■ Interrupt Operation ■ Signal Definitions ■ Interfacing to the LR3201

LR3000

Abstract: 8196 LR3000 User Manual lr2000 LR3201 mps 0709 LR3000A RST01 mps 1410
Contextual Info: Chapter 2 LR3201 Reset/Interrupt Controller This chapter describes the LR3201 Reset/Interrupt Controller. This chapter is organized into these sections: • General Description ■ Reset Operation ■ Interrupt Operation ■ Signal Definitions ■ Interfacing to the LR3201

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

TB186

Abstract: tic 47u 10NF 470PF 47PF LR301
Contextual Info: T B - 1 8 6 L R 3 0 1 P o u t/G a in v s P in F re q = 1 6 0 M H z ; V D S =28V dc; IDQ =1.2A 19 350 18 Pout 280 17 16 210 1dB compression = 250W 15 140 Gain 14 13 70 Efficiency @ 250W = 60% 12 11 4 8 12 16 20 P in in W a t t s T B - 1 8 6 L R 3 0 1 P o u t/G a in v s P in F re q = 1 6 0 M H z ;

rf push pull mosfet power amplifier

Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
Contextual Info: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30