LR50 Search Results

Contextual Info: polyfet rf devices LR501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices LR501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

LR501A

Abstract: LDMOS
Contextual Info: polyfet rf devices LR501A General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

cr21 resistor

Abstract: CR05 CR10 R047 CJ21 CJ05 CR10 resistor
Contextual Info: Thick Film Chip Resistors LR32/50 Series Features: 1 Low resistance value. 2) Low profile. 3) High power. How To Order: LR 50 – R047 K – T Packaging B = Bulk 100 pcs/bag) T = 7" Reel/Embossed Plastic Tape (4,000 pcs/reel) for LR50 5,000 pcs/reel paper tape for LR32

Contextual Info: polyfet rf devices LR501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

TB212

Abstract: LR501
Contextual Info: TB212, LR501 Vds=28VDC, Idq=1A, Gain/Eff vs. Frequency 18 100 16 90 14 80 12 Gain 70 Gain in dB 10 60 8 50 6 Efficiency 40 4 2 30 20 30 50 100 150 200 250 Frequency in MHz 300 350 400 450 470 Efficiency in % Pout fixed at 100W TB212 Pout/Gain vs Pin, 30MHz, LR501, Vds=28VDC, Idq=1A

LR63

Abstract: R020 R1000 LR50 low resistance chip 05W12
Contextual Info: Low Resistance Chip Resistors LR Series FEATURES Suitable for voltage detector circuit of mobile computing device and cellular phone. HOW TO ORDER LR 63 - R100 F - U Packaging T = Paper Taping LR32 , 5,000 pcs/7" reel U = Plastic Taping, (LR50, LR63), 4,000 pcs/7" reel

Contextual Info: 3bE D INDUSTRIAL ELECTRONIC • M7M43QE 00D33^S MIEE T - L i t '33 HOKUMS .43" 10.92mm LED DIGITAL DISPLAYS HI-EFFICIENCY RED • LR5082-7650 Series RED • LR5082-7700 Series FEATURES • • • • • • • • • • • Industry-standard 0.43 inch displays

s2513

Abstract: MSM 7225 S1709 E146370 S1113 s1716 SLR-16 s2311 sm 314 1040 D1 S2438
Contextual Info: Patent #: P-2631996 Patented Security: International Approvals: UL # E146370 CSA # LR50370-10 VDE # 57986 SEV # 100989 Protection: Material: Rated Temperature: Seal: Resistant to: Up to 70 PSI Polyamide - flame retardant, self-extinguishing nylon with neoprene bushing

Contextual Info: LR505 Linear ICs Dual-Channel Audio Preamp/Input Amplifier status Outp Pwr Min.500u @R load (Ohms)1.0k Upper 3dB Frequency (Hz)1.0k AV (dB) Min.68 Input Resistance Min. (Ohms)27k THD Max. (%)5.0 Quies. Pwr (W)25m Nom. Supp (V)1.5 Minimum Operating Temp (øC)-10

Contextual Info: polyfet rf devices LR501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

LR501

Contextual Info: polyfet rf devices LR501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices LR501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

TB206

Abstract: LR501 78L08 16AWG 160RF
Contextual Info: TB206 LR501, RF out/Gain vs RF in, Vds=28Vdc, Idq=0.8A, Freq=160MHz 20.0 220 200 19.5 180 160 RF out 19.0 140 Gain 120 18.5 100 P1dB at 200W 80 18.0 60 40 17.5 20 17.0 0.5 1 1.5 2 2.5 3 3.5 4 RF in Watts TB206 LR501, RF out/Gain vs RF in, Vds=28Vdc, Idq=0.8A, Freq=230MHz

LR63

Abstract: R100-F 05W12 LR32
Contextual Info: Low Resistance Chip Resistors LR Series FEATURES Suitable for voltage detector circuit of mobile computing device and cellular phone. HOW TO ORDER LR 63 - R100 F - U Packaging T = Paper Taping LR32 , 5,000 pcs/7" reel U = Plastic Taping, (LR50, LR63), 4,000 pcs/7" reel

217F

Contextual Info: LR5000W Series Ultra-Miniature, SMT 50W, Wide Input Range POL Switching Regulator Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice.

220VAC to 12VDC 2A circuit diagram

Abstract: V23042A2603B101 V23042A2305B101 V23042-A2005-B101 V23042-A2003-B101 V23042A2301B101 V23042-A2001-B101 V23042A2601B101 V23042A2303B101 V23042-A2303-B101
Contextual Info: V23042 series 2 Pole, High Dielectric Polarized PC Board Relay File E48393 File LR50227 Features • • • • • • • • 5A switching capacity. Meets FCC Part 68 isolation. Temperature compensated over operating range. No magnetic interference between adjacent relays.

Contextual Info: LR505P Linear ICs Dual-Channel Audio Preamp/Input Amplifier status Outp Pwr Min.500u @R load (Ohms)1.0k Upper 3dB Frequency (Hz)5.5k AV (dB) Min.68 Input Resistance Min. (Ohms)27k THD Max. (%)5.0 Quies. Pwr (W)25m Nom. Supp (V)1.5 Minimum Operating Temp (øC)-10

hearing aid circuit

Abstract: hearing aid transistor hearing aid LR505 GENNUM HEARING AIDS circuit diagram of hearing aid Hearing Aid Circuit Diagram LT505 BK1604 hearing aid microphone using amplifier
Contextual Info: Designing With The Low Current LT505 LT505 APPLICATION NOTE INTRODUCTION CIRCUIT PERFORMANCE The LT505 is a modified version of the LR505 Class A amplifier. It’s main feature is that its total current draw, including a high impedance receiver load, is only 250µA,

LR63

Abstract: lr-21 LR21
Contextual Info: Low Resistance Chip Resistors LR Series Features • Suitable for voltage detector circuit of mobile computing device and cellular phone. How to Order LR 21 - R100 F - T q w e r t qSeries LR wSize EIA 21 32 50 63 1020 2512 eResistance Value (4 digits) R047 = 47mΩ

ZTX753

Abstract: T092 ZTX752 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES DSARS0022094.
Contextual Info: I PNP SILICON PLANAR MEDIUM I POWER TRANSISTORS I ZTX752 ZTX753 II 1 ISSUE 2- JULY 94 FEATURES ‘ 100 volt VCEC * 2 Amp continuous * Low saturation * PtOt=1 ‘Watt current voltage E-Line 4BSOLUTE MAXIMUM 1 RATINGS. SYMBOL PARAMETER — Collector-Base Voltage

epoxy 5000

Abstract: ER5000
Contextual Info: LED TECHNOLOGY f2 E 5.0mm Round Lamp R 5000 H m 01 Features Long Leads, V2 Diffused Recommended Maximum Ratings • Low current requirements ■ High light output Reverse voltage (S'Bright & U'Bright Red/Others) ■ Reliable and rugged ■ 1C. compatible

DALLAS 2501

Abstract: La 7676 data sheet ksm 614 b 7357 rocker switch inrush current duration data sheet spemco hawk KS 5814 239 GENERAL ELECTRIC COMPANY Dale 3100
Contextual Info: NORTH AMERICAN HEADQUARTERS AND MANUFACTURING PLANT: APEM COMPONENTS, INC. PO Box 8288, Haverhill MA USA 01835-0788 TOLL FREE: 877 246-7890 TEL (781) 246-1007 FAX (781) 245-4531 e-mail: info@apem.com http://www.apem.com CORPORATE HEADQUARTERS: APEM Centre d'Affaires Paris-Nord

RSB6B10S

Contextual Info: Barrier Strips Sockets 0.375" PITCH SERIES RSB6B SOCKET FOR SERIES RSB6 TRI-BARRIER PHYSICAL PROPERTIES HOUSING MATERIAL: Polyamide FLAMMABILITY: UL94V-2 COLOR: Black RSB6B06S TERMINAL TERMINALS: Copper alloy, bright tin plating PIN : Copper alloy, bright tin plating