LRAD Search Results
LRAD Price and Stock
Tripp Lite SRLRADIUS18CABLE RUNWAY RADIUS DROP FOR 18 |
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SRLRADIUS18 | 1 |
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SRLRADIUS18 | Bulk | 2 Weeks | 1 |
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SRLRADIUS18 | 1 |
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Tripp Lite SRLRADIUS12CABLE RUNWAY RADIUS DROP FOR 12 |
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SRLRADIUS12 | Bulk | 2 Weeks | 1 |
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Pulse Electronics Corporation BPF1608LRADR2400L1608 2.4GHZ BPF TYPEAD |
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BPF1608LRADR2400L | Reel | 40,000 |
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BPF1608LRADR2400L | Reel | 9 Weeks | 40,000 |
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BPF1608LRADR2400L | 4,000 |
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SPC Multicomp MC-254-10-LL-RA-DIPConn, Header, R/A, 10Pos, 2Row, 2.5Mm; Connector Systems:Wire-To-Board; Pitch Spacing:2.54Mm; No. Of Rows:2Rows; No. Of Contacts:10Contacts; Contact Termination Type:Through Hole Right Angle; Product Range:Mc 254 Series Rohs Compliant: Yes |Multicomp Pro MC-254-10-LL-RA-DIP |
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MC-254-10-LL-RA-DIP | Bulk | 486 | 1 |
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SPC Multicomp MC-254-14-SL-RA-DIPConn, Header, R/A, 14Pos, 2Row, 2.5Mm; Connector Systems:Wire-To-Board; Pitch Spacing:2.54Mm; No. Of Rows:2Rows; No. Of Contacts:14Contacts; Contact Termination Type:Through Hole Right Angle; Product Range:Mc 254 Series Rohs Compliant: Yes |Multicomp Pro MC-254-14-SL-RA-DIP |
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MC-254-14-SL-RA-DIP | Bulk | 462 | 1 |
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LRAD Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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60d10
Abstract: LRAD
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LRAD-60D-KIT-1W001 LRAD-60D-100V-60W LRAD-60D-70V-60W 400Hz 60d10 LRAD | |
chn 003Contextual Info: 2. S c h e m a tic : 1. Mechanical Dim ensions: 6.0 Max 5.0 0.2 3. E le ctrical Specification: OCL: 3 .5 u H ± 2 0 % DCR: 0 .0 1 3 R ated C u rre n t: O hm s @1KHz, 0 .1 V Typ. 6 .0 0 Adc XFMRS Inc. e: HIGH CORRRNT SRLR-LRADHD SMT INDUCTORS UNLESS OTHERWISE SPECIFIED R/N: |
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205-3R1 Reb-26-99 Reb-26-99 chn 003 | |
TC528257
Abstract: n724
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TC528257 144WORDS TC528257 144-w 512-words TC528257J/SZ/nVTR1017240 TC528257J/SZ/FT/TR-70 TC528257J/SZ/FT/TR-80 n724 | |
Contextual Info: TOSHIBA TC514800AJ/AZ/AFT-70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJ/AZ/AFT is the new generation dynam ic RAM organized 524,288 word by 8 bit. The TC514800A J/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit |
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TC514800AJ/AZ/AFT-70/80 TC514800AJ/AZ/AFT TC514800A | |
tc5118180
Abstract: TC5118180AJ TC5118180A A495 A509 TC511818 TC5118 TOSHIBA TSOP50-P-400 toshiba A500 A498
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TC511818 QAJ/AFT-70/80 TC5118180AJ/FT TC5118180AJ/AFT TC5118180AJ/AFT-70/80 tc5118180 TC5118180AJ TC5118180A A495 A509 TC5118 TOSHIBA TSOP50-P-400 toshiba A500 A498 | |
tc5117400f
Abstract: TC5117400J
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TC5117400J/Z/FT-60/70 TC5117400J/Z/FT-60/70 TC5117400J/Z/FT. 1MX16 tc5117400f TC5117400J | |
Contextual Info: AHU u m川 i T - C E J R υ n P UNH nLU AA E L HHい ハHV R T ALTERATION 1 S S U E I l i CAPACITANCE ITEM CODE │ F * i ECWH 123620 VC 1 0, 0036 (362) i If 123920 VC 1 0, 0039 (392) I f 124320 VC 0 0043 (432) H 1 2 4 7 2 0 VC I 0.0047 (472) 7 1 2 5 1 2 0 V C 1 0.0051 (512) |
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127520VC | |
Contextual Info: Advance information Features • O rganization: 4 ,1 9 4 ,3 0 4 w o rd s x 4 bits • H ig h speed - 50/6 0 ns RAS access time - 2 5/ 3 0 ns column address access time - 10/12 ns CAS access time • Low p o w er consum ption - Active: 908 mW max - Standby: S.S mW max, CMOS I/O |
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24/26-pin 24/26-p E0-60JC AS4LC4M4E0-50TC AS4LC4M4E0-60TC U-30004-A. | |
Contextual Info: 1,M3,575 1,'ORDX 4 BIT DYNAMIC RAM * This is a ^ a n c e d information and specifications are subject to change without notice. DESCRIPTION The TC514400JL/ZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as |
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TC514400JL/ZL TC514400JL/ZL-80 TC514400JL/ZL-- | |
transistor smd y4w
Abstract: z7w smd transistor Y4W SMD y4p smd transistor Y4W diode transistor smd 1Bp z7w smd diode SMD Transistor Y4w transistor smd y4p z7p transistor
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UM10321 SSL1750 UM10321 transistor smd y4w z7w smd transistor Y4W SMD y4p smd transistor Y4W diode transistor smd 1Bp z7w smd diode SMD Transistor Y4w transistor smd y4p z7p transistor | |
AN3989
Abstract: i.MX233 i.MX23 ARM926EJ-S MX23 MX233 nand flash pcb layout design imx233 169-BGA
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AN3989 AN3989 i.MX233 i.MX23 ARM926EJ-S MX23 MX233 nand flash pcb layout design imx233 169-BGA | |
Sony IMX 183
Abstract: Sony sony cmos sensor imx 178 Sony imx 214 Sony ImX 252 sony cmos sensor imx 226 Sony IMX 219 CMOS Sony "IMX 219" CMOS sony IMX 322 cmos sony cmos sensor imx 185
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SG027
Abstract: EIA-481A GR-253-CORE SCG2500 tms 374
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SCG2500 SCG2500 SG027 SG027 EIA-481A GR-253-CORE tms 374 | |
ltsx e3
Abstract: ltsx e3 PM7329 SCR SS 3328 LTSX LTCE epd 47- 50 2LW MARKING CODE wrr AND I.610 0X00 PM7329
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PM7329 S/UNI-APEX-1K800 PMC-2010141 PM7329 APEX-1k800 ltsx e3 ltsx e3 PM7329 SCR SS 3328 LTSX LTCE epd 47- 50 2LW MARKING CODE wrr AND I.610 0X00 | |
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Contextual Info: PRE LIM IN AR Y- - May 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET MB8 1 V16405A-60/-70 CMOS 4M x 4 BIT HYPER PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Hyper Page Mode Dynamic RAM The Fujitsu MB81V16405A is a fully decoded CMOS Dynamic RAM DRAM that contains |
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V16405A-60/-70 MB81V16405A | |
Contextual Info: HM534251A S eries-262,144-Word x 4-Bit Multiport CMOS Video RAM • DESCRIPTION HM534251AJ Series The HM534251A is a 1-Mbit multiport video RAM equipped with a 256k-word x 4-bit dynamic RAM and a 512-word x 4-bit SAM serial access memory . Its RAM and |
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HM534251A eries------262 144-Word HM534251AJ 256k-word 512-word CP-28D) | |
XFMRSContextual Info: 1. Mechanical Dimensions: 1 0 .0 0 iQ .3 Q 2. Schematic: 3 .8 0 Ì0 .2 0 3. E le c tr ic a l S p e c ific a tio n : OCL: 3 .0 0 ± 0 .2 0 "I I- 1 .6 0 Q: 1.60 - 7 .3 0 - 5 .2 u H ± 2 0 % 8 Min @ 100KHz, 0.1V RATED CURRENT: DCR: o •N rO @ 100KHz, 0.1V 5.5A dc |
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100KHz, UL94V-0 E151556 102mm) XFTPRH104-5R2M XFMRS | |
Contextual Info: HM538122 Series Preliminary 131,072 x 8-Bit Multiport CMOS Video Random Access Memory • DESCRIPTION HM 538122JP Series The HM538122 is a 1-Mbit multiport video RAM equipped with a 128k-word x 8 -bit dynamic RAM and a 256-word x 8 -bit SAM serial access memory . Its RAM |
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HM538122 538122JP 128k-word 256-word 3DCP40D CP-40D) 787l0 TTP-20D TTP-20DR | |
ic ac 1501-12
Abstract: V53C664K10
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V53C664 V53C664 80/80L 10/10L V53C664L 16-bit V53C664K10 ic ac 1501-12 V53C664K10 | |
514400BContextual Info: Prelim inary H B 5 6 D 1 3 6B W /S B W -6B /7B /8B 1 ,0 4 8 ,5 7 6 -W o r d x 3 6 -B it H ig h D e n s ity D y n a m ic R A M M o d u le Rev.O Dec.20 .19 93 HITACHI T h e H B 56D 136 is a 1M X 36 d y n a m ic RAM m odule, m ounted 8 pieces of 4M bit DRAM H M 514400B S sealed in SO J package and 2 |
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514400B HM512200BS IB56D13G 72-pin HB56D136 294/50/Kinkos/MFM M11T227 | |
Contextual Info: HB56D836IB Series 8,388,608-W ord x 36-Bit High Density Dynamic RAM Module HITACHI The HB56D836IB is a 8M x 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM HM5117400AS sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100BS) sealed in SOJ package. An outline of the HB56D836IB is |
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HB56D836IB 36-Bit 16-Mbit HM5117400AS) HM514100BS) 72-pin | |
Sony IMX286
Abstract: Sony IMX287 sj5 357 b
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IMX28CEC MAPBGA-289, ARM926EJ-Sâ Sony IMX286 Sony IMX287 sj5 357 b | |
Contextual Info: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX28AEC Rev. 2, 03/2012 i.MX28 i.MX28 Applications Processors for Automotive Products Package Information Plastic package Case MAPBGA-289, 14 x 14 mm, 0.8 mm pitch Silicon Version 1.2 Ordering Information |
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IMX28AEC MAPBGA-289, AEC-Q100 | |
images of IC 8085 pinContextual Info: A N A LO G D E V IC E S CM0S tP-Compatible 10-Bit Plus Sign ADC AD7571 FE A T U R E S 10-Bit Plus Sign Resolution No M issed Codes O ver Full Tem perature Range Conversion Tim e 8 0 |is D ifferential Analog Voltage Inputs, ± 10V Range S e rial and Parallel Data O utputs |
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10-Bit AD7571 AD7571 images of IC 8085 pin |