LSE 1006 Search Results

CI C393C

Abstract: GE c394 ci C393 C393 200mAde C393C GE SCR 1000 C388 C392 C392A
Contextual Info: INVERTER SCR's 500 TO 700 A M P E R E S GE TYPE C 387 C 388 C 397 C 398 C 392 C393 A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500-1200 500-1200 500-1200 500-1200

C354

Abstract: C354B C157C C154 C154A C158 C164 C358 C49A C164C
Contextual Info: INVERTER SCR's 109 63 TO 270 A M P E R E S C 48/C148 GE TYPE ALL D IF F U S E D C O N S T R U C T IO N C 49/C149 C 15 4 , 156 C 155, 157 C 158, 159 ALL A M PLIFY IN G A M PLIFYIN G A M P L IF Y IN G D IF F U S E D GATE GATE GA TE C 16 4 , 165 C 354, 355 C358

diode c48

Abstract: C157C C154A C48PB C358p C154 C158 C164 C354 C358
Contextual Info: INVERTER SCR's 109 63 TO 270 AMPERES C48/C148 GE TYPE A LL D IF F U S E D CONSTRUCTION C49/C149 C154, 156 C155, 157 C158, 159 A LL A M P L IF Y IN G A M PL IF Y IN G A M P L IF Y IN G D IF F U S E D GATE GATE GATE C164, 165 C354, 355 C358 A M P L IF Y IN G A M P L IF Y IN G A M P L IF Y IN G

Contextual Info: AMERICA N/E LECTRON IC b3E » Gb?b7M3 GG01075 W «EDI MINIBRIDGE 50 ns. ULTRA-FAST RECOVERY 8 AMPERES* SINGLE-PHASE, FULL-WAVE BRIDGES HEAT SINK • CHASSIS • PC BOARD MOUNTING INTEGRALLY MOLDED HEAT SINK PROVIDES LOW THERMAL RESISTANCE SPACE SAVING IN-LINE DESIGN

C393C

Abstract: C159A C388 C397PB GE SCR 1000 C387 C392 C392A General electric SCR 1000 amps C393
Contextual Info: INVERTER SCR's 500 TO 700 A M P E R E S GE TYPE C 387 C 388 C 397 C 398 C 392 C393 A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE A M P L IF Y IN G GATE 500-1200 500-1200 500-1200 500-1200

UPD4265

Contextual Info: SEC /¿PD4265 6 5 ,5 3 6 x 1 -BIT DYNAMIC CMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The NEC /UPD4265 is a 65,536-word by 1-bit d ynam ic CM O S Random Access M em ory RAM designed to operate from a single + 5 V p ow er supply. The

C159M

Abstract: GE C158N scr 250 amps 2000 Volt C157C CI58 C-48S sine wave inverter pic diode c159t 49/C159N C154A
Contextual Info: INVERTER SCR's SELECTOR GUIDE 2 000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 < g 800 700 600 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 400 500 700 800 850 900 1000 1150 1500 RMS C U R R E N T -A M P E R E S

MOC1005

Abstract: MOC1006 VQE 24 led VDE0113 VDE0160 VDE0832 VDE0833 transistor J5X
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC1005 M O C 1006 6-P in D IP O p to is o la to rs Transistor O utput These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • •

c358 scr

Abstract: CI C393C C393C 24 volt dc to 230 volt ac inverter C397PB GE SCR 1000 C387 C388 "Silicon Controlled Rectifier" C392A
Contextual Info: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 g 800 < 700 600 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 4 0 0 500 700 800 850 9 0 0 1000 1150 1500

c395i

Abstract: C394 GE c394 CC94P GE SCR 1000 C394A C395 C395A C395B C445A
Contextual Info: INVERTER SCR's 700 TO 1000 AMPERES GE TYPE CONSTRUCTION ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION • , C394 C395 C 444/C 445 C 447/C 448 C449 A M P L IF Y IN G G ATE A M P L IF Y IN G GATE A M P L IF Y IN G G ATE A M P L IF Y IN G G ATE A M P L IF Y IN G

1001G

Abstract: 1002G 1003G SFAF1001G SFAF1008G sfaf1006g
Contextual Info: is TAIWAN SEMICONDUCTOR SFAF1001G - SFAF1008G Isolated 10.0 AMPS. Glass Passivated Super Fast Rectifiers ITO-22QAC RoHS COMPLIANCE Features A ❖ 4- <• ❖ A UL Recognized File # E-326243 High efficiency, low VF High current capability High reliability

1004G

Abstract: SFF1004G 1001G 1002G 1003G SFF1001G SFF1008G SFF1006G
Contextual Info: m SFF1001G - SFF1008G TAIWAN SEMICONDUC Isolation 10.0 AMPS. Glass Passivated Super Fast Rectifiers Pb S8ÜS ITO-22QAB Features ❖ -?* A High efficiency, low VF High current capability High reliability High surge current capability Low power loss. For use in low voltage, high frequency inventor, free

1001G

Abstract: 1002G HERAF1001G
Contextual Info: is TAIWAN SEMICONDUCTOR HERAF1001G - HERAF1008G Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers RoHS COMPLIANCE ITO-22QAC Features ❖ A ❖ -$• UL Recognized File # E-326243 Glass passivated chip junction. High efficiency, Low VF High current capability

Contextual Info: CP Clare . < U l ’ > I A ; : C PC2400E PR ELIM IN A R Y SP EC IFIC A TIO N S \ CPC2400E Data Transfer Module DESCRIPTION The C P C 2 4 0 0 E is a 2400 baud data transfer module inte nded for ap plic atio ns that is q u ire a data c o m m u n ic a tio n s link to the Public Switched T e le p h o n e N etw ork (PSTN) The C P C 2 4 0 0 E is a c om ple te

VQ1006

Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R ) D S S M ¡ n ( V ) Id (A) r D S (o n ) M a x ( ß ) V G S (th )(V ) 4 @ V Gs = 10 V 0.8 to 2 0.3 4 @ V G S = 10 V 0.8 to 2 0.33 4 @ V q s - 10 V

TLMG2200

Abstract: TLMR2200 max6253
Contextual Info: T e m ic TLM.2200 TELEFUNKEN Semiconductors SMD LED in Tinted Diffused SOT23 Package Color High efficiency red Yellow Green TV!* TLMR2200 TLMY2200 TLMG2200 Technology GaAsP on GaP GaAsP on GaP GaP on GaP Angle of Half Intensity ±tp 70° Description The TLM.2200 series is suitable for very flat backlighting

60S5

Contextual Info: 60S SERIES Microsemi Corp. ' Thg Ooóe experts SANTA ANA, CA SCOTTSDALE, AZ For more inform ation call: 602 941-6300 DESCRIPTION/FEATURES • ECONOMICAL 6 AMP Iq MOLDED DEVICE OFFERS CAPABILITY OF STUDMOUNTED RECTIFIERS • 400 AMPS SURGE PROVIDES HIGH IN-RUSH CURRENT CAPABILITY

mc-10041

Abstract: MC1204-1206 MC1006 MC1004 MC1204 mc1005 MCI006 MECL II 1004 MC1205 mc1206
Contextual Info: D U A L 4-INPUT G A T ES \ M E C L II MC 1000/1200 series MC1004 thru MC1006 M C I204 thru M C I206 Provide sim u ltan eo us O F V N O R o r A N C V N A N D o u tp ut function s. Th ese devices co n ta in an internal bias reference insuring that the threshold point is alw ay s in the cen ter o f the transition region over

Microwave Oven Inverter Control IC

Abstract: microwave inverter panasonic panasonic inverter microwave Microwave Oven Panasonic AN6718N inverter control ic microwave oven inverter AN6718 panasonic microwave inverter DD13BS2
Contextual Info: Panasonic Others AN6718N Microwave Oven Inverter Control 1C • Overview The AN6718N is an IC for resonance type inverter con­ trol of microwave oven. It can directly control the IGBT Insulated Gate Bipolar Transistor and incorporates the various protective functions.

T813D

Contextual Info: HOLTEK r r HT813D0 5.6 Second LOG-PCM Speech Features • • • • • • • • • • • • O p e ra tin g voltage: 2.4V~5.0V D irectly drives a n e x te rn a l tr a n s is to r Low standby c u rren t l|iA typ. for VDD=3V M inim al e x te rn a l com ponents

High power SCR

Abstract: C602 C602LE lse 1006 C501 C602L C602LA C602LB C602LC C602LD
Contextual Info: High Power Silicon Controlled Rectifier 600A AVG., UP TO 2600 VOLTS C602 A M P L IF Y IN G GATE The C602 Series of high power SCR’s feature the proven, multi-diffused construction in a new, larger, pressure-mounted package for phase control. FEATURES: •

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

IRFP360

Contextual Info: PD-9.568B International ^ Rectifier IRFP360 HEXFET P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^DSS _ 400V ^D S on - 0 - 2 0 Q

lt 8202

Abstract: 1/DIODE lt 8202 DAPC M8203 ip52 61P52
Contextual Info: SM 8202/SM 8203 8-B it Microcomputer VCR System Controller SM8202/SM8203 • (VCR System Controller) Description T h e S M 8 2 0 2 / S M 8 2 0 3 is an 8 ~ b it m ic ro c o m p u ­ t e r w h ic h in te g r a t e s an 8 ~ b it CPU core, a ROM, a RAM, s e r ia l I / O p o rts , a tim er, a n A / D c o n v e r t e r