LT 175 1111 Search Results

Contextual Info: polyfet rf devices F1280 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended

Contextual Info: VARACTOR TUNING DIODES C a p acitan ce Figure o f M erit at v„=4 o v Q at 4 0 V and and SO MHz f»1 0 M Hz i :4 E 9 lC . . P ro d u c t H ighlights P a rt N u m b er l l l l l l l l l l l i 1111 § 1 1 W C733 W C736 VVC741 iiS lis C a p a c ita n c e R atio

SK100ELT20W

Abstract: SK10ELT20W lt 419 LT 412
Contextual Info: SK10/100ELT20W LVTTL to Diff LVPECL or TTL to Diff PECL Translator HIGH-PERFORMANCE PRODUCTS Description Features • The SK10/100ELT20W is a single LVTTL to LVPECL and TTL to PECL translator. Because PECL / LVPECL levels are used, only VCC = +3.0 to +5.5V and ground are required.

3975 8-PIN

Abstract: SK100ELT20W SK10ELT20W 100LVELT20 lt 175 1111 pin diagram of lt 540 SK10
Contextual Info: SK10/100ELT20W LVTTL / LVCMOS to Diff LVPECL or TTL / CMOS to Diff PECL Translator HIGH-PERFORMANCE PRODUCTS Description Features • The SK10/100ELT20W is a single LVTTL / LVCMOS to LVPECL and TTL / CMOS to PECL translator. Because PECL / LVPECL levels are used, only VCC = +3.0 to +5.5V

1S1618

Abstract: IN987B do-7 diode iss IN987 IN9778 ic 957B SJ 76 A DIODE EMI
Contextual Info: niCROSEMI CORP 25E D bllSäbS QGOQTbfl fl 1N957B thru 1N992B DO-7 emi Corp. Th§'0KX/^9M0trtS SCOTTSDALE, AZ SANTA ANA, CA For more information calk 602 941-6300 FEATURES T - t h t f SILICON 400 mW ZENER DIODES • 6.8 TO 200V ZENER VOLTAGE RANGE • 1N962B THRU 1N992B HAVE JAN, JANTX AND JANTXV QUALIFICATIONS

KSD 166

Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
Contextual Info: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5

Contextual Info: 8 1992 / " T lin t A R TECHNOLOGY _ _ LT1103/LTn 05 O fflin e S w itc h in g R e g u la to r F€ ftTU R € S D € S C M P T IO n • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1103 Offline Switching Regulator is designed for high input voltage applications using an external FET

Contextual Info: Comlinear Corporation Wideband, Low Distortion D r i \$ L - a m p s 1111 APPLICATIONS: • output amplification • arbitrary waveform generation • ATE systems • cable/line driving • function generators • SAW drivers • flash A /D driving and testing

Contextual Info: SiG E C P L E S S E Y S E M I C O N D U C T O R S DS4089-3.1 DG306AE25 GATE TURN-OFF THYRISTOR APPLICATIONS • Variable speed A.C. motor drive inverters VSD-AC . ■ Uninterruptable Power Supplies KEY PARAMETERS 600A 'TCH 2500V DRM 225A 1000V/|iS dly'dt

Contextual Info: r juTECHNOLOGY rm _LT1211/LT1212 14MHz, 7V/|as, Single Supply Dual and Q uad Precision O p Amps FEATURES D E fflPT lO n • Slew Rate: 7V/|jsTyp ■ Gain-Bandwidth Product: 14MHz Typ The LT 1211 is adual, sing lesup p ly precision opam p with

a1128

Abstract: A1128LUA-T lt4060
Contextual Info: A1128 Highly Programmable Hall-Effect Switch Features and Benefits Description • Chopper stabilization for stable switchpoints throughout operating temperature range • Externally programmable: ▫ Operate point through the VCC pin ▫ Output polarity

A1128LUA-T

Abstract: A1128LLTTR-T
Contextual Info: A1128 Highly Programmable Hall-Effect Switch Features and Benefits Description • Chopper stabilization for stable switchpoints throughout operating temperature range • Externally programmable: ▫ Operate point through the VCC pin ▫ Output polarity

Contextual Info: A1128 Highly Programmable Hall-Effect Switch Features and Benefits Description • Chopper stabilization for stable switchpoints throughout operating temperature range • Externally programmable: Operate point through the VCC pin Output polarity Output fall time for reduced EMI in

6N135-136

Abstract: o-50 N136
Contextual Info: 6N135 6N136 SIEMENS HIGH-SPEED 2.5 kV TRIOS OPTOCOUPLER FEATURES • Isolation Test Voltage: 2500 VAC, 1 min. •TTL Compatible * High Bit Rates: 1 Mbit/s ■ High Common-Mode Interference Immunity * Bandwidth 2 MHz * Open-Collector Output * External Base Wiring Possible

DG648

Contextual Info: M ITEL DG648BH45 Gate Turn-off Thyristor SEMICONDUCTOR Supersedes March 1995 version, DS4093 - 2.2 DS4093 - 2.3 March 1998 KEY PARAMETERS 'tcm 2000A V drm «GOV l„ 745A 1000V/|iS dTV > d i- j/ d t 300A/ iS APPLICATIONS • Variable speed A.C. motor drive inverters (VSD-AC .

TLE2074

Abstract: D4078 TLE2074A TLE2074ACDW TLE2074ACN TLE2074CDW TLE2074CN TLE2074Y
Contextual Info: TLE2074, TLE2074A, TLE2074Y EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT QUAD OPERATIONAL AMPLIFIERS S LO S 123 - D 4078, JUNE 1993 [available features * * * * 28-V/n,s Slew Rate Min Low Noise 17 nV/VHz Max at f = 10 kHz 11.6 nVA/fii Typ at f = 10 kHz High-Gain Bandwidth Product. . . 10 MHz

Contextual Info: DATA SHEET BIPOLAR DIGITAL INTEGRATED CIRCUITS iiP B 1 5 0 6 G V , ¿ P B 1 5 0 7 G V 3GHz INPUT DIVIDE BY 256, 128, 64 PRESCALER IC FOR ANALOG DBS TUNERS The ¿¿PB1506GV and ¿¿PB1507GV are 3.0 GHz input, high division silicon prescaler ICs for analog DBS tuner

phototransistor sensor

Abstract: FPA700A FPA700 FPA710 FPA710A FPA720 FPA720A phototransistor array element sensor
Contextual Info: 1-111 Photo Sensors Cont’d Matching Factor •oilT(Min) Device No. Description •oUT(Max) VcE(sat) <CE(lt) Ip = 50 mA H = 10 m W /cm 2 H = 20 m W /cm 2 v CEO lç = 500 mA VCE = 5.0 V ■CE lg - 1.0 mA Tung. @ 2854°K mA V V mA Distance = 0 .0 5 ' Typ

2N3303

Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any

transformer prv

Abstract: spark gap 1200v 4ja42ieh20abi 1N4532 SCR Handbook, General electric 1N4529 silicon controlled rectifier 1N4530 1N4531 1N4536
Contextual Info: CONTROLLED AVALANCHE I Silicon Rectifier 35A Avg. 1N4529-30 I 1N4531 SEE PAGE 205 1N4532-34 SEE PAGE 262 1N4536 SEE PAGE 205 Up to 1200V CONTROLLED AVALANCHE RECTIFIERS FROM GENERAL ELECTRIC Feature These Advances in Silicon Rectifier Diode Applications: Self-protection against norm al voltage transients. D issipates up to 12,000 w atts

74F524

Abstract: 74F524PC 74F524SC C1995 F524 9546
Contextual Info: 74F524 8-Bit Registered Comparator General Description The ’F524 is an 8-bit bidirectional register with parallel input and output plus serial input and output progressing from LSB to MSB All data inputs serial and parallel are loaded by the rising edge of the input clock The device functions

LT1786F

Abstract: 49/CTX210605 ccfl lamp circuit diagram
Contextual Info: r r u n _ LT1786F m TECHNOLOGY FCRTURCS • Wide Battery Input Range: 4.5V to 30V ■ Grounded La m p or Floating La m p Configurations SMBus P ro g ra m m a b le CCFL S w itching R egulator to-lamp-current control” and communicates using the

x727

Abstract: delta PEF 2091 N V5.3 peb 2091 errata PEB 2091 N TQFP-64 PEF2091 TF013
Contextual Info: ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 5.3 PEF 2091 Version 5.3 Delta Sheet 09.98 DS 1 PEB/F 2091 Revision History: Original Version: 09.98 Previous Version: Point Point in previous (in new Version Version) Subjects (major changes since last revision)

peb 2091 errata

Abstract: smd code marking 27H
Contextual Info: SIEMENS ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 5.3 PEF 2091 Version 5.3 Delta Sheet 09.98 PEB/F 2091 Revision History: Original Version: 09.98 Previous Version: Point in previous Version Point (in new Version) Subjects (major changes since last revision)