LT 332 DIODE Search Results

RLYB10240

Contextual Info: ECG Relays and Accessories Series A and Solid State Power Relays Opto Isolated , SPSTNormally Open B • • • • • • • SCR Outputs (Non Suffixed) Zero Voltage Switching (Non Suffixed) DC Mosfet Output Versions (D-Suffix) TRIAC Output Versions (T-Suffix)

lt 332 diode

Abstract: 10 DC-1 diode RLYB1210D RLYA25480 varistor 332 RLYB10240 RLYA40240 RLYA10240 RLYB40480 RLYB25240T
Contextual Info: ECG Relays and A ccessories Solid State Power Relays Opto Isolated , SPSTNormally Open S e ries A and B • • • • • • • S C R Outputs (Non Suffixed) Zero Voltage Switching (Non Suffixed) DC M osfet Output Versions (D-Suffix) TR IA C Output Versions (T-Suffix)

D F 331 TRANSISTOR

Abstract: lt 332 diode samsung tv NPN Transistor 1A 800V to - 92 C 3311 transistor transistor t 04 27
Contextual Info: SAMSUNG SEMICONDUCTOR 14E 0 INC 17^4142 I OOQ?bkS T NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5012 T-33-11 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN TO-3P(F) High Collector-Base Voltage VCb o = 1 5 0 0 V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )

EL332GD

Abstract: EL332HD EL332ED EL332YD EL332ID 332ED 332HD 332ID 332PYD 332RD
Contextual Info: “E V E R L I G H T ELECTRONICS 3DE D 341S7D3 DDGODta? /-•//-a/ T MAIN FEATURES: • LO W G O ST. • I.C. CO M PIT ABLE. • LO W C U R R E N T R EQ U IR E M E N T S . • LO N G LIFE-S O LID S T A T £ RELIABILITY, 'à â à 332 SERIES Round Type LEO Lamps 5.0mm

Contextual Info: 'C LUM-2568M L352 V / Light Emitting Diodes LUM-2568ML352 I LUM-2568ML352 H 7 7Ji^y t 1 6 X 1 6 K-y h T h 1 6 X 1 6 Dot Matrix Unit D im e n s io n s U n it : m m ^ y h, Sfc lT ? É 5 16X16K'y t-Th StT'-To U, i t o Mm LSI = :> h n - 5 l i , 3 E S i c AtULifòIfó-eto

LR-37

Contextual Info: Light Emitting Diodes Basic order units Basic order units •Ordering To place an order, refer to the following tables. Make sure the product name, type of packaging taping of lamps and chip LEDs, etc. and basic order unit are correct. Please order a quantity which is a multiple of

IRF330

Abstract: IRF331 IRF332 IRF333 331z
Contextual Info: 7 9 6 4 1 4 2 S ^M S U N G S E M I C O N D U C T O R I DEI TTbMms DDDSim 9 8 D 0 5114 7 “ D T ^ 3 7 ~ // N-CHANNEL POWER MOSFETS IRF330/331/332/333 FEATURES • Low RDS on • Improved inductive ruggedness • • • • • • Fast switching times Rugged polysilicon gate ceil structure

1N4474

Abstract: 4661N 1N1492 1N44B 1N4460 1N4471 1N4479
Contextual Info: 1N 4460 thru 1N4496 and 1N6485 thru 1N6491 Microisemi Corp. $ The diQite SC O TTSD A LE , A Z ☆JANS* 1.5 WATT G LASS ZEN ER DIODES FEATURES • Microminiature package. • High perform ance characteristics. • Stable operation at temperatures to 200°C.

SE1450

Contextual Info: u t s 5 & # m j ,t » lí|l?ft: 51S03J CÈ.Î5 : [ 755-fl32 79 I 1B /B 3 2 7 B S 5 9 /3 3 2 7 BB6Ü fÉ J t; 0 7 6 3 -8 3 2 7 9 2 0 3 R IíIt S lilffl ' S e n s o rO g p n I I o s z «vwvi i i p o I I o s ü . -com co m SE1450 G a A s Infrared Em ittin g Diode

c1237

Abstract: FI6 diode 4116 DIODE REDRESSEMENT QQGE333 onduleur variateur lh2000 7-T21 Thomson-CSF diode
Contextual Info: S G S— THOMSON *\ 5TC 0 I _ ¿> ï- ^ 3 59C 0 2 3 31 _ D ” O T H O M S O N -C S F DIVISION SEMICONDUCTEURS . Ü0QE3317 ESM 4116 FAST RECOVERY RECTIFIER DIODE DIODE DE REDRESSEMENT RAPIDE Fe a tu r e s Soft recovery w ith lo w recovery charge. Fully characterised for operation up to 20 kHz,

UPA64H

Abstract: PA64H IRZ 46 T108 diode 476 k upa64 8 pin ic 3773
Contextual Info: NEC m =t=fi\rx Aa Di ode Ar r ay //PA64H i t K 7 K Silicon Epitaxial Diode A rray High Speed Switching aîPA64Hi±, 7 / - SIP ' r - ' J > ) •> K * i i ü ï ü X 'f f l ^ H / P A C K A G E D IM E N S IO N S tc, (U nit : mm) (em?) -y V t„ ¡^ S / F E A T U R E S

Contextual Info: MOTOROLA SC DIODES/OPTO ese D • b3b?ass -aoaoiia 2 wêt-l<-is 2N4199 thru 2N4204 Designer's Data Sheet Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . fast switching, high-voltage Thyristors especially designed for pulse modulator

p626

Abstract: IC P626 TLP626-1
Contextual Info: TLP626,-2,-4 GaAs IRED a PHOTO-TRANSISTOR PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION Unit in mm T h e T O S H I B A TLP626, -2 and -4 consist of two g a l l i u m ar s e n i d e infreared emitting diodes c onnected in inverse parallel, optic a l l y coupled

609-5015M

Abstract: D0061b TD2425-B tb ansley TD2425F CRY30M 609-2615M crydom as0241 three phase SCR gate drive circuit AC15A
Contextual Info: Solid S t a t e Relays I n p u t /O u t p u t M o du les P o w er M o du les CRY3 SSSffft-VX ifWM 0 M D53TP 50D INPUT STATUS /Z iiŒ w « a i2 CSYDOM CH Y O O M 3 PHASE SOUD STATE RELAY S O U O -S T A T E R E L> S O U O -S T A T E RELAY \j % A C R Y D O M

diode lt 238

Abstract: samsung tv lt 332 diode samsung SSE
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSD5011 im e d I ao a?tta 4 N P N T R IF L t DIFFUSED P L A N A R SIL IC O N T R A N SIS T O R T-33-11 C O L O R TV HORIZONTALNOUTPUT APPLICA TIO N S DAM PER DIO DE BUILT IN TO-3P(F) High Collector-Base Voltage V cbo =1500V A BSO LU T E M A X IM U M RATINGS (Ta=25°C)

HOA1877

Contextual Info: HOA1877 Transmissive Sensor FEATURES • C hoice ol phoblransislor or pholodarling fcn output » Wide operating temperature range - 5 5 'C lo -t-IOO Cj ■ a SO h. (12.7 mm high optical axis position ■ a 375 in.(9.52 m m j slol width iiu m if DESCRIPTION

diode lt 0236

Abstract: thomson 237 DT 2 SiC IPM 237 thomson
Contextual Info: S G S— THOMSON *\ 5TC 0 I _ ¿> ï- ^ 3 59C 0 2 3 31 _ D ” O T H O M S O N -C S F DIVISION SEMICONDUCTEURS . Ü0QE3317 ESM 4116 FAST RECOVERY RECTIFIER DIODE DIODE DE REDRESSEMENT RAPIDE Fe a tu r e s Soft recovery w ith lo w recovery charge. Fully characterised for operation up to 20 kHz,

diode Marking Code b3

Abstract: Zener Diode LT 432 diode b3 diode code b2 Zener Diode B1 9 B1 6 zener marking 222 zener diode diode lt 823 zener diode marking 222 HZM4.3NB1
Contextual Info: ADE-208-130 B Z HZM-N Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 2 May 1994 Outline • Wide spectrum from 1.9V through 38V of zener voltage provide flexible application. • MPAK Package is suitable for high density

n11a

Abstract: 101S UHP4
Contextual Info: SD3443/5443 Silicon Phototransistor FEATURES • TO-4-6 metal can package ' C hdce ol [Ut window or lensed package • 90r or 18’ rcminalj acceptance angle oplion ' Wide operating temperature range (- 55 'C lo+125'C j ' External base connection for added control

Contextual Info: ykiyjxiyki Quad SPST CMOS Analog Switches Maxim’s MAX332, DG202 and DG212 are normally open, quad single-pole-single-throw SPST analog switches. These CMOS switches can be continuously operated with power supplies ranging from ±4.5V to ±18V. Maxim guarantees that the MAX332 and

Zener Diode LT 432

Abstract: 8.2 B2 ZENER diode marking code 682 zener diode 82 b3 marking 222 zener diode 4.7 B1 zener diode 273-0333 zener diode B2 bt 784 zener 5.1 B2
Contextual Info: I ADE-208-130 B Z HZM-N Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 2 May 1994 Outline • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. • MPAK Package is suitable for high density

IRF7203

Contextual Info: International ¡K?RRectifier PD 9.1102A IRF7203 PR ELIM IN A R Y HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching

Contextual Info: TRANSIENT VOLTAGE SUPPRESSORS 1500W SERIES TVS DIODES / 1.5KE CASE 10 1500W .Î »] "t,& Breakdown Voltage TYPE 1.5KE6.8 1.5KE6.8A 1.5KE7.5 1.5KE7.5A 1.5KE8.2 1.5KE8.2A 1.5KE9.1 1.5KE9.1A 1.5KE10 1.5KE10A 1.5KE11 1.5KE11A 1.5KE12 1.5KE12A 1.5KE13 1.5KE13A

Contextual Info: TELEDYNE SOLI» STATE SSE ]> ÔT17bt.ti OGGübS4 S3fl ITSS W E L E D Y N E SO LID STATE SOLID STATE DC RELAY OPTICALLY ISOLATED 2 & 5 A/50 VdC AC OR DC INPUT CONTROL ELECTRICAL SPECIFICATIONS FEATURES ; Ì I • TTL compatible inputs • Optional controlled rise & fall times