LTE IN PHILIPS Search Results

BYD37J

Abstract: solid tube industrial rectifier BYD37 BYD37K BYD37M BYD37 Series BYD37D BYD37G rectifier tube 577
Contextual Info: N AUER PHILIPS/DISCRETE LTE D • bbS3T31 Q02b5flfl 423 M A P X P hilips Sem Product specification Avalanche fast soft-recovery rectifier diodes DESCRIPTION Glass passivated rectifier diodes in

GS 069 LF

Abstract: BUK437-400B DIODE JS.4 P02S
Contextual Info: N ANER PH ILI PS/DISCRETE bbSBSBl 0G304Ô0 7Gb • APX LTE » Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-eff ect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N ANER PHILIPS/DISCRETE LTE D bbS3S31 DD30Mfl0 70b « A P X Product Specification Philips Semiconductors BUK437-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

BUK444-400B

Contextual Info: N AMER PHIL IPS/DISCR ETE LTE D • LbS3T31 QQ30S30 Obi ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a lastic full-pack envelope, he device Is intended for use in

BUK455-60A

Abstract: K455-60A BUK455-60B diode d2s BUK455 T0220AB k455
Contextual Info: N AMER PHILIPS/DISCRETE LTE D ^53^31 □□3Db4Q TTl HiAPX Product Specification Philips Semiconductors B U K455-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

n4403

Abstract: N4402 ZN4402 2N4402 2N4403
Contextual Info: N AMER PHILIPS/DISCRETE LTE D • t.bS3R31 DOPÔISS ÔÔ3 2N4402 2N4403 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in plastic TO-92 envelope for use in general purpose applications. QUICK REFERENCE DATA 2N4403 2N4402 Collector-emitter voltage

2PA1015

Abstract: 2PA1015L 2PC1815 2PC1815L
Contextual Info: ^53^31 LTE D N AMER PHILIPS/DISCRETE 0Q EÖ 1Ö 7 746 » A P X 2PC1815 2PC1815L SILICON SMALL-SIGNAL TRANSISTORS NPN small-signal transistors, each in a TO-92 envelope. They are intended for use in audio amplifier driver stages and other general purpose applications.

X3A-BFQ195

Abstract: BFG195 BFG197 BFG198
Contextual Info: Philips Semiconductors |H bb SB T B l NPN 8 GHz wideband transistor crystal D0322Dfl 757 APY Product specification X3A-BFQ195 N AMER PHILIPS/DISCRETE LTE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied

BUK655-500B

Contextual Info: N AMER PH ILIPS/DISCRETE LTE D • ^53*131 0030680 BBT « A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. FREDFET with fast recovery

uhf tv booster circuit diagram

Abstract: OM2070 112dBuV philips if catv amplifier
Contextual Info: • IAPX DÜ32SDb b27 OM2070 LTE D N AMER PHILIPS/DISCRETE y HYBRID IN TEG R A TED CIRCUIT VHF/UHF W IDE-BAND A M PLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as an amplifier in M ATV and CATV systems, and as

BC550

Abstract: bc549 equivalent
Contextual Info: N AMER PHILIPS/DISCRETE LTE D • t b S 3^131 00275bb 7ST IAPX B U 54y BC550 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, prim arily intended fo r low-noise input stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.

Transistor D 1881

Abstract: BFQ65 b 647 transistor philips 433-2 npn 1349 transistor 131-6 transistor 8505
Contextual Info: P h ilip s S em icon du ctors bbâB^ Bl QG31SRT bSQ W A P X Product sp ecification NPN 8 GHz wideband transistor BFQ65 LTE D N AUER PHILIPS/DISCRETE D ESCRIPTION PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the GHz

BA482

Abstract: BA483 BA484
Contextual Info: LTE D • BA482 BA483 BA484 IAPX □D2blbc] T4B N AMER PHILIPS/DISCRETE SILICON PLANAR DIODES S w itching diodes in th e su bm iniature D O -3 4 glass envelope, intended fo r band sw itching in v .h .f. television tuners. Special featu re o f th e diodes is th e ir low capacitance.

MRC100

Abstract: C19 transistor mrc101 1S33 BLV194 RF BeO
Contextual Info: Philips Semiconductors bbS3T31 DGETEM l M il • APX ^ P fo d u c ts p e c ific a ti^ BLV194 UHF power transistor ■N AfIER PHILIPS/DISCRETE LTE T> QUICK REFERENCE DATA RF performance at T h = 25 °C in a common emitter test circuit. FEATURES • Emitter-ballasting resistors for an

BU903

Contextual Info: N AMER P H I L I P S / D I S C R E T E LTE D • ^^53^31 0D2B32G 7A0 IAPX BU903 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistors in a SO T93 envelope intended fo r use in pow er supplies and d e fle ctio n c ircu its fo r c o lo u r receivers and m onitors.

2N2369 transistor pulse generator

Abstract: 2N2369 philips 2N2369 J 2N2369 philips 2n2369
Contextual Info: N AUER PHILIPS/DISCRETE LTE D • 1^53^31 □ D2A0'î4 TT7 W M A P X Ü N Ü iib y J L SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N tra n sisto r in a TO -18 m etal envelope w ith th e co lle c to r connected to th e case. T he 2N 236 9 is p rim a rily intended fo r use in ve ry high-speed saturated sw itching and v.h .f. a m p lific a tio n .

smd transistor e7

Abstract: smd transistor JE blt50 smd transistor JE 45 smd 809 x transistor transistor 2222 GC smd transistor UHF TRANSISTOR GP 809 max 809 ls
Contextual Info: N AUER P H I L I P S / D I S C R E T E s iiiiv u n u u c io r s LTE B bbS3 S31 • DDSÖ7 3 7 BLT50 UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. DESCRIPTION QUICK REFERENCE DATA RF performance at Ts < 60 °C in a common emitter class-B test circuit see

Contextual Info: HçyUiniûtîtfc’ 1 A L O U T P U T PEN TO D E P E N T H O D E D E S O R T IE P E N T H O D E -E N D R O E H R E H e a rin g : Chauffage : H eizung : In d ir e c t ; A .C .; parallel supply In d ire c t ; cou rant a lte rn a tif ; alim entation en parallèle

dp-22

Abstract: block diagram of 8048 microcontroller
Contextual Info: Short-form preliminary specification Philips Semiconductors Microcontroller for monitor OSD and auto-sync applications PCE84C886 FEATURES General • CMOS 8-bit CPU enhanced 8048 CPU with 8 kbytes system ROM and 192 bytes system RAM • One 8-bit timer/event counter (T1) and one 8-bit counter

PL1267

Abstract: Z300T philips 1974 1267
Contextual Info: PHILIPS COLD CATHODE TRIGGER TUBE TUBE DECLENCHEUR A CATHODE FROIDE RELAISRÔHRE MIT KALTER KATODE A pp licatio n : For use in welding tim ers, relay and counting c ir c u its , power sw itching and sim ila r a p p li­ cation A pplication: Pour u tilis a tio n dans des m inuteries de soudure,

dlatgs

Abstract: IEC134 philips pyroelectric infrared sensor DLaTGS amplifier
Contextual Info: Philips Components RPY99P/P5206 D E V E LO P M E N T DATA This; data sheet contains advance information and specifications which are subject to change without notice. DEUTERATED LATGS PYROELECTRIC INFRARED SENSOR FITTED WITH HIGH-DENSITY POLYETHYLENE WINDOW

dlatgs

Abstract: philips pyroelectric infrared sensor DM1000 DLaTGS amplifier pyroelectric tgs csl pyroelectric infrared sensor Philips Germanium "Pyroelectric Infrared Sensors" iodide IEC134
Contextual Info: Philips Components r p y io 4 s e r ie s V_ D E VE LO P M E N T DATA This data sheet contains advance information and specifications which are subject to change without notice.

vHF amplifier module

Abstract: philips if catv amplifier wideband amplifier philips ferrite material specifications
Contextual Info: N AUER PHILIPS/DISCRETE b'ïE D ^ 5 3 ^ 3 1 DDBSS'ìl 257 H A P X Philips Semiconductors Preliminary specification Wideband amplifier module OM2Q83/86 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use

BUK453-500B

Abstract: T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE bTE 0030L .i0 i5 4 « apx J> Product Specification Philips Semiconductors BUK453-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor ¡n a plastic envelope. The device is intended for use in