LTHJ Search Results

Contextual Info: SIEMENS BFS17W NPN Silicon RF Transistor >For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Marking Ordering Code B F S 17W M Cs Pin Configuration Q62702-F1645 1 =B Package ro il m Type 3 =C SOT-323 Maximum Ratings of any single Transistor

Contextual Info: i T u v m _ LT1762 Series TECHNOLOGY 150mA, Low Noise, LDO M icropower Regulators F€flTUR€S D C S C R IP TIO n • ■ ■ ■ ■ The LT 1762 series are micropower, low noise, low dropout regulators. The devices are capable of supplying 150mA of output cu rrent with a dropout voltage of 300mV.

HSP56

Abstract: PCT789
Contextual Info: VCY789 H S 1J 5 6 M odem The H EP56M odem is a high speed Host 5-gnal P ro cessila Modem MSP M odem 1'chip implementing I f l H V 34 protocols and 5GK tecäincHogv Several patents pending an the P C w /H S P Modem scftw are an d h ard w aie archi(ecuu'e The PCT7BS supports baseline

I203

Contextual Info: B ulletin 12037 11/94 International IQ R Rectifier s e r ie s 45L R , 150K / l / k s (R) STANDARD RECOVERY DIODES Stud Version Features 150A • A llo y d io d e ■ H ig h c u r r e n t c a r r y in g c a p a b il i t y ■ H ig h v o l t a g e r a t in g s u p to 1 0 0 0 V

SGSP474

Contextual Info: 30E t • 7iai237 0030021 S ■ _ / = 7 S G S - T H O M S O N 5 T ? ' ,H t " SM S G S P 4 7 4 ^ 7 # [ÜDffi Q [E[L[i(g¥^(ó)iD(gÍ SG SP 475 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) SGSP474 SGSP475 450 V 400 V 0.7 fi 0.55 fi

YG901C2

Abstract: T151 T930
Contextual Info: YG901 C2 5 a — K LOW LOSS SUPER HIGH • f t » - * » : Outline Drawings ED RECTIFIER I Features Insulated package by fully m o ld in g , • tevF Low V h- Connection Diagram Super high speed sw itching. • T V -*— r - W () : Applications <> ib

SOT23 KJA

Contextual Info: SIEMENS BCR 135 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=2.2kiî, R2=47kft Marking Ordering Code Pin Configuration BCR 135 WJs 1 =B Package UJ II CNJ Q62702-C2257 CO II O Type

Contextual Info: SIEMENS BDP947 NPN Silicon AF Power Transistors • For AF drivers and output stages . • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP948, BDP950 PNP Pin Configuration II o 1= B II

Contextual Info: SIEMENS BSM300GA170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • ^ G on.min = 5.6 Ohm 1c 1700V 440A UJ Type BSM300GA170DN2 E3166

Contextual Info: SIEMENS BSM 75 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • ^G on,min = 22 Ohm Type ^CE BSM 75 G B 1 7 0 D N 2 1700V 110A h Package Ordering Code HALF-BRIDGE 1

siemens igbt

Abstract: fr3060
Contextual Info: SIEMENS BSM 75 G AL 120 DN2 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate £ BSM 75 GAL 120 DN2 1200V 105A LU Type 1c Package Ordering Code HALF BRIDGE GAL 1 C67076-A2011-A70

siemens igbt BSM 300

Abstract: GT120DN2
Contextual Info: SIEMENS BSM 200 GT 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 200 GT 120 DN2 1200V 300A h Package Ordering Code

V7021

Abstract: 12 pin transformer sony LS 7729 T-77-29
Contextual Info: SONY CORP/COMPONENT P RODS 4TE D • 6362303 0003312 1 «SONY V7021 S O N Y NTSC/PAL Decoder Description V7021 is a decoder 1C used to convert composite video signals into analog RGB sig n a ls. It has signal o u tp u ts , such as composite sync, burst flag, sub-carrier, and

Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ô'îSDQ'îb 000^035 fl BYV 61 •BYV 62 •BYV 63 TMUIIFIMIKIK] electronic Creative Technologies Silicon Mesa Diodes Applications; Very fast rectifier and switch for example for switch mode power supply Features: • Glass passivated junction

Q62702-C2594

Contextual Info: SIEMENS BCP 51M . BCP 53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN BCP 51M AAs Q62702-C2592 BCP 52M AEs Q62702-C2593

LT1460BCS3-10

Abstract: marking code LTGG LTGF marking code sot 23 MARK LTGG LTKD MARKING CODE ltbw LM 3937 LT1460BCS3-2 LT1521CS8-3 LTHS
Contextual Info: PACKAGE PACKAGE CROSSDIMENSIONS REFERENCE LCC METAL CAN CERDIP Ceramic Dual-In-Line METAL CANS SSOP Shrink Small Outline TSSOP Thin Shrink Small Outline SIDE BRAZED PACKAGE OUTLINE DESCRIPTION LTC NSC MOT TI LINFIN MAXIM 8-Lead Side Brazed Hermetic D8 D

cc 3025 diode

Abstract: 5T4 tube BUZ110S MC 140 transistor 8235 smd transistor h7 E3045 Q67040-S4005-A2 transistor smd marking CODE Wb transistor marking smd 7c
Contextual Info: In fin e o n BUZ 11 OS ! ^ e d Costoni * technologie* im P r° SIPMOS Power Transistor Product Summary Features • N channel • Enhancement mode Drain source voltage ^DS Drain-Source on-state resistance ñ DSÍon Continuous drain current • Avalanche rated

pj 87 diode

Abstract: diode pj 87 I334 diode I334 660 tg diode iball pj 1339 PJ 63 MM diode 1s500 IRFM350
Contextual Info: Data Sheet No. PD-9.491C INTERNATIONAL RECTIFIER > lIORl REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM350 2N 7227 JANTX2N7227 JANTXV2N7S27 N-CHANNEL REF: MIL-S-19500/59S] Product Summary 400 Volt, 0.315 Ohm HEXFET T h e HEXFE T® technology is the key to International

SGS-ATES l120

Abstract: National Semiconductor 4045 transistor bf 175 TAA611
Contextual Info: PROFESSIONAL SEMICONDUCTOR INTRODUCTION This databook contains data sheets on the SGS-ATES range of linear, MOS and COS/MOS integrated circuits intended for professional applications. The information on each product has been specially presented in order that the

Contextual Info: VEW-Family AC-DC Converters > 1 0 0 W Industrial Environment VEW-Family 150/300/600 W AC-DC Converters Single output • 3750 Vrms input to output electric strength test • High level of electrom agnetic compatibility Safety according to IEC/EN 60950 LGA

TRANSISTOR si 6822

Abstract: LM 3140 si 6822 transistor transistor 6822 si transistors Si 6822 lm3140 SN-72500 transistors br 6822 Siemens technische transistor 6823
Contextual Info: Technische Erläuterungen SIEMENS Allgem eines O ptoelektronische Bauelem ente haben in der m odernen Elektronik und dam it in fast allen Bereichen unseres Lebens weiten Eingang gefunden. Sie sind in hohem Maße an dem Um stellungsprozeß von Mechanik auf Elektronik beteiligt und haben, aufgrund ihrer Funktion als

M7A transistor

Abstract: transistor M7A Q62702-C2340
Contextual Info: SIEMENS BCR 169 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1 = 4 .7 kii Type Marking Ordering Code Pin Configuration BCR 169 WSs Q62702-C2340 1=B Package 2=E 3=C SOT-23 Maximum Ratings

Contextual Info: SIEMENS BUP 401 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type BUP 401 VCE 600V >c 29A C Pin 3 E Package Ordering Code TO-220 AB C67078-A4404-A2 Maximum Ratings

Contextual Info: SIEMENS BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • f j = 7GHz F = 1.5dB at 900MHz n • Two (galvanic) internal isolated