M 13007 Search Results

13007X

Abstract: Block diagram on monochrome tv receiver Block diagram of monochrome tv receiver circuit diagram of mod 5 ring counter monochrome tv receiver 13001X
Contextual Info: M M O TO RO LA, M C 13001X M C 13007X M ono m ax B la c k and W h ite T V S ubsystem MONOMAX BLACK AND WHITE TV SUBSYSTEM The MONOMAX is a single chip 1C that will perform the electronic functions of a monochrome TV receiver, with the exception of the tuner,

5U4GB

Abstract: 5V4GA 5Y3GT television service manual 5u4gb tube data 5y3gt tube 5y3gt TUBE B562 c AC input filter Capacitor
Contextual Info: 46 Sylvania Technical M anual R A T IN G S D esign M ax im u m Rating System Rectifier Service*1) P eak Inverse Plate Voltage (M ax.) . A C Plate S u p p ly V oltage (Each Plate, R M S ) (M ax.) .

6sj7

Abstract: 6sk7gt 12SK7GT 12SL7GT 12SJ7 6sj7gt 12SN7-GTA 6sl7gt sylvania 6SN7 12SL7-GT
Contextual Info: 371 Receiving Tubes Grid No. 2 and Grid No. 4 Voltage M a x . . N egative Grid No. 3 Voltage ( M a x . ) . Positive Grid No. 3 Voltage (M ax.) . Plate D issip ation (M ax.) .

6BM8

Abstract: ecl82 colpitts oscillator construction design colpitts oscillator construction resistor 220 ohms eCl8 triode ecl82
Contextual Info: Sylvania Technical Manual 118 CHARACTERISTICS AND TYPICAL OPERATION Pentode Section 170 V o lts 170 V o lts -2 V o lts 10 Ma 2.8 M a 6200 /¿mhos 47 0.4 M e g o h m 10,000 O h m s 1500 O h m s P la te V o l t a g e .

A 13007

Abstract: 13007 m p 13007
Contextual Info: HA13007 Quad Driver T h e H A 13007 m ono lith ic, bipolar, high-voltage, h igh-current quad driver is especially designed for s w itc h in g a p p l ic a tio n s . T h is d e v ic e is rec o m m en d e d fo r in te rfa cin g lo w -lev e l lo g ic to peripheral loads such as relays, solenoids, stepping

6973 tube

Abstract: center tap voltage transformer
Contextual Info: Beam Power Pentode Construction . M iniature T-6'/i Base . Button 9 Pin, E9-1 B a sin g . 9EU Outline .6-4 M axim um O ia m e t e r . 0.875 In.

Contextual Info: 7543 AF AMPLIFIER Sharp Cutoff Pentode A n Construction . M iniature T-5Vi B ase .Button 7 Pin, E7-1 B a sin g .7B K O utline . 5-2 M axim um D ia m e t e r . 0.750 In.

D 13007 K

Abstract: LD 13007 p 13007 13007
Contextual Info: , E F REVISIONS REV A M E C H A N IC A L ECN, ERN PRO DUCT DRAWING APP R D . K.L. S H E LL S : S TA M P ED IN SER T: HIGH T E M P E R A TU R E R E S IS TAN T TH E R M O P LA S TIC , G LASS R E IN FO R C E D . FLAM M A B ILIT Y RATING U L 9 4 V - 0 , B LA C K .

EEL-19

Abstract: TB 1226 EN aes 1136 HC EEL-19 ANI 1015 KSS 1206 TRW 1179
Contextual Info: IQUAL'IK ICA I ION I RE QUIREMENTS I REMOVED M I L- M- 38 51 0/ 40 1A 9 Auaust 1983 Tiimrmmnr MIL-M-38510/40HUSAF 22 October 1981 | | I MILITARY SPECIFICATION MICROCIR CU IT S, DIGITAL, N-CHANNEL, S IL ICON-GATE , MO NO LI TH IC PERIPHERAL INTERFACE ADAPTER

Contextual Info: 6EC PLE S SE Y S E M I C O N D S M3E D 37bôS22 OQ13bûS Q H P L S B T '4 5 -1 ^ 0 5 GEC PLESSEY ISEMIC ONDUCTORS I SP8610 1 0 0 0 M H z + 4 SP8611 130071500M H z + 4 The SP8610/11 are asynchronous ECL divide by four circuits, with ECL com patible outputs which can also be

HA 12058

Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
Contextual Info: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION

TRANSISTOR tip122 CHN 949

Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Contextual Info: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.

sylvania vt 25 tube

Abstract: sylvania vt 80 tube 6CB5 6CB5A
Contextual Info: 143 Receiving Tubes 36 4.0 11 9200 15,000 4500 1.5 6 31 3.5 7.5 8100 16,000 3500 1.1 5 M a x im u m S ig n a l P la te C u r r e n t . Z e ro S ig n a l G rid N o. 2 C u r r e n t . M a x im u m S ig n a l G rid N o. 2 C u r r e n t T ra n s c o n d u c ta n c e .

temic 0675 d4

Abstract: temic 0675 c9 TFK 404 telefunken transistor Temic IDIC chip 5551 preliminary schematic diagram pioneer amplifier sa 9800 7-segment display tfk 308 temic 0675 d1 atmel e5550 AEG PS 451
Contextual Info: General Information R em ote Control Identification Systems M icrocontrollers Addresses Temic S e m i c o n d u c t o r s General Information Alphanumeric Index T y p e . T y p e . e5530 10, 300 TK5550F-PP

transistor E 13007

Abstract: 13007 m FAIRCHILD E 13007 T 13007 13007 2 transistor *e13007 FAIRCHILD E 13007- 1 E 13007 0
Contextual Info: KSE13006/13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Sw itching • Suitable fo r Sw itching R egulator and M otor Control ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : KSE13006 Rating VcBO

TRANSISTOR 13007a

Abstract: 13007a 13007a power transistor 13007* transistor S4001
Contextual Info: SGS-THOMSON S i i*i I[L[l g !QOS M JE 13007A SILICON NPN SWITCHING TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR • HIGH CURRENT CAPABILITY APPLICATIONS . SWITCHING REGULATORS . MOTOR CONTROL DESCRIPTION The MJE13007A is silicon multiepitaxial mesa

E13007

Abstract: E 13007 F13007 F 13007 SEC E 13007 - 2 transistor MJ 13007 equivalent 13007 je13007 mj 13007 transistor E 13007
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE13007 M JF13007 Designer’s Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

758a

Abstract: JANTX1N758A
Contextual Info: Zener Regulator Diodes P art N um ber ! M icrosem i i Package D ivision Outline Type M/crosegw Mil Data Pow er <W j Spec ! Sheet ID r ' Vz V) izt Z zt Zzk |mA) ( fi) ( fi) IR (uA) VR Tol. (V) ;<+/-%) 1N960A Scottsdale DO-35 STD 5352 0.4 9.1 14 7.5 700 25

EB 13007

Abstract: SE 13007 SE 13007 TRANSISTOR 13007 TRANSISTOR j 13007 transistor E 13007 j 13007 TRANSISTOR p 13007 transistor 13007 T 13007
Contextual Info: KSE13006/13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r Base V oltag e : KSE13006 : KSE13007 C o lle c to r E m itte r V oltag e: KSE13006

D 13007 K

Abstract: T 13007 13007 j 13007 E 13007 0 13007 applications E 13007 13007 TRANSISTOR F 13007 m 13007
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ô'îSOO'îb D D D % 4 3 T ■ ALÛG TE 13006 * TE 13007 9electronic Cr««ifv«l«chno<ogws T - 33-13 Silicon NPN Power Transistors A p p lications: Sw itching m ode power supply, electronic ballast Features: • In multi diffusion technique

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. W V COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 6 4 3 2 - LOC DIST R E V IS IO N S DE EO ALL RIGHTS RESERVED. P LTR F MILITARY PART N U M B E R , 0 0 7 7 9 , M A R K E D ON O P P O S I T E SIDE.

HAL3007

Contextual Info: HA13007 Quad Driver Description The HA 13007 monolithic, bipolar, high-voltage, high-current quad driver is especially designed for s w itc h in g a p p lic a tio n s . T h is d e v ic e is recom m ended for interfacing low -level logic to peripheral loads such as relays, solenoids, stepping

mj 13007

Abstract: mj 13005 13005 A mj 13009 13005a 13009 13007 13005 13005 2 MJE13005A
Contextual Info: pxfl f\ second source devices produits seconde source BUX BUX MJE MJE MJE MJE MJE M JE MJE MJE MJE Type v CEO V VCEX (V) 84 85 13004 13005 13005 A 13006 13007 13007 A 13008 13009 13009 A 400 450 300 400 400 300 400 400 300 400 400 800 1000 600 700 850 600

PHE13007

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PH E 13007 is a silicon npn pow er sw itching tra n sisto r in the T 0 2 2 0 A B envelope intended fo r use in high freq ue n cy electronic lighting ballast applications, converters, inverters, sw itching regulators, m otor control system s,