M02S75 Search Results

TEA 1020 sp

Abstract: M02S75 QD07
Contextual Info: @ LG Semicon. Co. LTD._ Description Features The GMM7408100BS/SG is an 8M x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 20 pieces of 4M x 4 bit DRAMs in 24 26 pin SOJ package on both side the p rin te d c irc u it board w ith d e co u p lin g

Contextual Info: J ICS9148-01 Integrated rCircuit ìm iìt Systems, Inc. Advanced Information Frequency Generator & Integrated Buffers for PENTIUM General Description Features The ICS9148-01 generates all clocks required for high speed RISC or CISC m icroprocessor system s such as Intel

GM76C512

Abstract: GM76C512-55 power supply LG 32 gm76c512-70 GM76C512L
Contextual Info: @ LG Semicon. Co. LTD. Description Pin Configuration The GM76C512/L/LL is a 524,288 bits static random access memory organized as 65,536 words by 8 bits. Using a 0.8«m advanced CMOS technology, it provides high speed operation with minimum cycle time of 55/70/85/100ns. The device

DNS-60

Contextual Info: @ LG Semicon. Co., LTD Description Features The GMM791000DNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400DJ, 1M x4 sealed in 20 pin SOJ package and lM xl D R A M in 20 pin SO J p a ck a g e . The GMM791000DNS is a socket type memory

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7401000ES/SG is an 1M x 40 bits D y n am ic RA M M O D U LE w h ich is assembled 10 pieces of lM x 4 bit DRAMs in 20/26 pin SOJ package on single side the printed circuit board w ith decoupling capacitors. The GMM7401000ES/SG is