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Elite Semiconductor Memory Technology Inc M12L16161A5TG Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	M12L16161A5TG		15,954			1 - 10 - 100 - 1000 - 10000 -	Get Quote

M12L16161A5T Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
M12L16161A-5T		Elite Semiconductor Memory Technology	512k x 16 Bit x 2 Banks Synchronous DRAM		Original	PDF	622.35KB	29
M12L16161A-5T		Unknown	512K x 16-Bit x 2Banks Synchronous DRAM		Original	PDF	578.33KB	27
M12L16161A-5TG		Elite Semiconductor Memory Technology	512K x 16-Bit x 2Banks Synchronous DRAM		Original	PDF	709.72KB	30

M12L16161A5T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: M12L16161A 2Q SDRAM 512K x 16Bit x 2Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 ) Burst Length (1, 2, 4, 8 & full page)	Original	M12L16161A 16Bit M12L16161A	PDF
Contextual Info: ESMT M12L16161A Revision History Revision 0.1 Oct. 23 1998 -Original Revision 0.2 (Dec. 4 1998) -Add 200MHZ Revision V1.0 (Dec. 10 1999) -Delete Preliminary -Rename the filename Revision V1.1 (Jan. 26 2000) -Add –5.5 Spec. Revision V1.2 (Apr. 25 2000)	Original	M12L16161A 200MHZ 127mm	PDF
M12L16161A-7TG Abstract: M12L16161A M12L16161A-5TG M12L16161 Contextual Info: ESMT M12L16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3	Original	M12L16161A 16Bit M12L16161A M12L16161A-7TG M12L16161A-5TG M12L16161	PDF
M12L16161 Abstract: m12l16161a-7t Contextual Info: ESMT M12L16161A Revision History Revision 0.1 Oct. 23 1998 -Original Revision 0.2 (Dec. 4 1998) -Add 200MHZ Revision V1.0 (Dec. 10 1999) -Delete Preliminary -Rename the filename Revision V1.1 (Jan. 26 2000) -Add –5.5 Spec. Revision V1.2 (Apr. 25 2000)	Original	200MHZ 127mm M12L16161 m12l16161a-7t	PDF
esmt m12l16161a Abstract: M12L16161A M12L16161A-7TG 200MHZ M12L16161A-5TG Contextual Info: ESMT M12L16161A Revision History Revision 0.1 Oct. 23 1998 -Original Revision 0.2 (Dec. 4 1998) -Add 200MHZ Revision 1.0 (Dec. 10 1999) -Delete Preliminary -Rename the filename Revision 1.1 (Jan. 26 2000) -Add –5.5 Spec. Revision 1.2 (Apr. 25 2000) -Correct error typing of C1 dimension	Original	M12L16161A 200MHZ 127mm esmt m12l16161a M12L16161A M12L16161A-7TG 200MHZ M12L16161A-5TG	PDF
Contextual Info: ESM T M12L16161A 2Q Operation Temperature Condition -40 C~85 C SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs	Original	M12L16161A 16Bit M12L16161A	PDF
M13S2561616A-5TG Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII Contextual Info: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now	Original	256Kb 40/44L-TSOPII M11B416256A-25JP M11B416256A-35TG M11L416256SA-35JP M11L416256SA-35TG 40L-SOJ 44-40L-TSOPII 128Mb M13S2561616A-5TG 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII	PDF
M12L16161A Abstract: esmt m12l16161a M12L16161A-7TIG Contextual Info: ESMT M12L16161A Operation temperature condition -40℃~85℃ SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs	Original	M12L16161A 16Bit M12L16161A esmt m12l16161a M12L16161A-7TIG	PDF
Contextual Info: ESMT M12L16161A Revision History Revision 0.1 Oct. 23 1998 -Original Revision 0.2 (Dec. 4 1998) -Add 200MHZ Revision 1.0 (Dec. 10 1999) -Delete Preliminary -Rename the filename Revision 1.1 (Jan. 26 2000) -Add –5.5 Spec. Revision 1.2 (Apr. 25 2000) -Correct error typing of C1 dimension	Original	M12L16161A 200MHZ 127mm	PDF
Contextual Info: ESMT M12L16161A Revision History Revision 0.1 Oct. 23 1998 -Original Revision 0.2 (Dec. 4 1998) -Add 200MHZ Revision 1.0 (Dec. 10 1999) -Delete Preliminary -Rename the filename Revision 1.1 (Jan. 26 2000) -Add –5.5 Spec. Revision 1.2 (Apr. 25 2000) -Correct error typing of C1 dimension	Original	200MHZ 127mm	PDF
M12L16161A Abstract: M12L16161A-7T M12L16161A-5T M12L16161A-6T M12L16161A-8T Contextual Info: M12L16161A 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply The M12L16161A is 16,777,216 bits synchroLVTTL compatible with multiplexed address nous high data rate Dynamic RAM organized as	Original	M12L16161A 16Bit M12L16161A M12L16161A-7T M12L16161A-5T M12L16161A-6T M12L16161A-8T	PDF
Contextual Info: ESM T M12L16161A 2Q Automotive Grade SDRAM 512K x 16Bit x 2Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 )	Original	M12L16161A 16Bit M12L16161A	PDF
SDRAM Abstract: M12L16161A-7TG2Q Contextual Info: ESMT M12L16161A 2Q SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 )	Original	M12L16161A 16Bit M12L16161A SDRAM M12L16161A-7TG2Q	PDF
M12L16161A-7TG Abstract: M12L16161A M12L16161A-5TG Contextual Info: ESMT M12L16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3	Original	M12L16161A 16Bit M12L16161A M12L16161A-7TG M12L16161A-5TG	PDF

SDRAM Abstract: M12L16161A-7TIG2Q M12L16161A-7TIG Contextual Info: ESMT M12L16161A 2Q Operation Temperature Condition -40°C~85°C SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs	Original	M12L16161A 16Bit M12L16161A SDRAM M12L16161A-7TIG2Q M12L16161A-7TIG	PDF
SDRAM Contextual Info: ESMT M12L16161A 2Q Automotive Grade SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z GENERAL DESCRIPTION JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs	Original	M12L16161A 16Bit M12L16161A SDRAM	PDF