M1339 Search Results

da53

Abstract: uPD488385FB-C60-53-BF1 uPD488385FB-C80-40-BF1 uPD488385FB-C80-45-BF1 uPD488385FB-C80-50-BF1
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD488385 72 M-bit 256K x 18 x 16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where

Contextual Info: Coaxial Power Splitter/Combiner 4 Way-0° 50Ω 1600 to 6400 MHz Maximum Ratings ZN4PD-642W+ DC PASS Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 10W max. Internal Dissipation 1.2W max. • wideband, 1600 to 6400 MHz

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD45256441, 45256841, 45256163 256M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45256441, 45256841, 45256163 are high-speed 268,435,456 bit synchronous dynamic random-access memories, organized as 16,777,216x4x4, 8,388,608x8x4, 4,194,304x16x4 word x bit x bank , respectively.

DVP-40EH

Abstract: DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3
Contextual Info: DVP-PLC Application Manual Programming Industrial Automation Headquarters Delta Electronics, Inc. Taoyuan Technology Center No.18, Xinglong Rd., Taoyuan City, Taoyuan County 33068, Taiwan TEL: 886-3-362-6301 / FAX: 886-3-371-6301 Asia Delta Electronics (Jiangsu) Ltd.

Contextual Info: Surface Mount RF Transformer 50Ω TCM1-1 1.5 to 500 MHz Features Maximum Ratings Operating Temperature Storage Temperature -20°C to 85°C -55°C to 100°C RF Power 250mW DC Current 30mA Permanent damage may occur if any of these limits are exceeded. Pin Connections

A 69157 scr

Abstract: HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41
Contextual Info: ND3% BASE1 XXXX4641-1306-1-P 1306 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 14:59 TS:TS date TS time LEDS & ACCESSORIES Find Datasheets Online LED DESIGN KITS • THROUGH-HOLE LEDS POWER LINE DESIGNER KIT HIGH-INTENSITY LED LAMPS CONT. T- 13⁄4 (5mm)

Contextual Info: Surface Mount RF Transformer 50Ω TCM4-1W 3 to 800 MHz Features Maximum Ratings Operating Temperature Storage Temperature -20°C to 85°C -55°C to 100°C RF Power 0.25W DC Current 30mA Permanent damage may occur if any of these limits are exceeded. CASE STYLE: DB714

equivalent transistor D1555

Abstract: transistor d1555 transistor d1047 d1555 transistor TRANSISTOR DATASHEET D1555 delta plc DVP 14SS DVP-40EH DVP-10SX d1555 D1557
Contextual Info: PLC PLC DVP-PLC Application Manual 【Programming】 Table of Contents Chapter 1 Basic Principles of PLC Ladder Diagram Foreword: Background and Functions of PLC . 1-1 1.1 The Working Principles of Ladder Diagram . 1-1

DVP-10SX

Abstract: DVP-14SS delta plc DVP 14SS DVP-32EH DVP-80EH DVP-64EH DVP-32ES DVP-48EH DVP-60ES DVP-20EX
Contextual Info: PLC www.delta.com.tw/industrialautomation PLC ASIA Delta Electronics, Inc. Taoyuan1 31-1, Xingbang Road, Guishan Industrial Zone, Taoyuan County 33370, Taiwan, R.O.C. TEL: 886-3-362-6301 / FAX: 886-3-362-7267 Delta Electronics Jiang Su Ltd. Wujiang Plant3

M1339

Abstract: uPD45256441G5-A10B-9JF uPD45256841G5-A10B-9JF
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD45256441,45256841,45256163 256M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45256441, 45256841, 45256163 are high-speed 268,435,456 bit synchronous dynamic random-access memories, organized as 16,777,216x4x4, 8,388,608x8x4, 4,194,304x16x4 word x bit x bank , respectively.

Contextual Info: Surface Mount RF Transformer 50Ω TCML1-19 800 to 1900 MHz Features Maximum Ratings Operating Temperature Storage Temperature -20°C to 85°C -55°C to 100°C RF Power 0.25W DC Current 30mA Permanent damage may occur if any of these limits are exceeded. CASE STYLE: DB714

A91A

Abstract: pd45256 toyo uPD45256441G5-A10B-9JF uPD45256841G5-A10B-9JF AYAA
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT jUPD45256441,45256841,45256163 256M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45256441, 45256841, 45256163 are high-speed 268,435,456 bit synchronous dynamic random-access memories, organized as 16,777,216x4x4, 8,388,608x8x4, 4,194,304x16x4 word x bit x bank , respectively.