M1443 Search Results

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M1443 Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 22 (19/34) AWG TC 0.032 b) Insulation 0.010" Wall, Nom. PVC/ 0.003" Wall NYLON

PD444016LG5-A8-7JF

Abstract: PD444016LG5-A12-7
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD444016L 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The μPD444016L is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The μPD444016L is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD444016 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The μPD444016 is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The μPD444016 is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 4 3 8 3 3 6 2 8M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE Description The /iPD4383362 is a 262,144 words by 36 bits synchronous static RAM fabricated with advanced CMOS

coaxial cable awm 1354

Abstract: AWM 2498 M39024/11
Contextual Info: Manhattan Electrical Cable Alpha Wire | www.alphawire.com | 1-800-52 ALPHA Specifications subject to change. For complete specifications and availability, visit www.alphawire.com. 141 Manhattan™ Electrical Cable Signal transmission made reliable A lpha Wire’s Manhattan

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4443362 4M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 128K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE Description The µPD4443362 is a 131,072 words by 36 bits synchronous static RAM fabricated with advanced CMOS

Contextual Info: データ･シート MOS 集積回路 MOS Integrated Circuit PD444016L 4M ビット CMOS 高速スタティック RAM 256K ワードx16 ビット μPD444016L は 4,194,304 ビット（262,144 ワード×16 ビット）の CMOS 高速スタティック RAM です。

uPD444016LG5-A12-7JF

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD444016L 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The µPD444016L is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The µPD444016L is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4383362 8M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE Description The µPD4383362 is a 262,144 words by 36 bits synchronous static RAM fabricated with advanced CMOS

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT jU P D 4 4 4 0 1 6 L 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The ^¡PD444016L is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD4443362 4M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 128K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE Description The μPD4443362 is a 131,072 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: High Directivity Monolithic Amplifier VNA-28A+ 50Ω 0.5 to 2.5 GHz The Big Deal • 2.8 & 5V operation • High directivity, 14-21 dB • Footprint compatible with VNA-28 CASE STYLE: DL1020 Product Overview VNA-28A+ is a wideband amplifier providing high directivity. It has built-in DC blocks at input and output and

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD444016L 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The μPD444016L is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V. The μPD444016L is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4564441-A75, 4564841-A75, 4564163-A75 64M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The µPD4564441-A75, 4564841-A75, 4564163-A75 are high-speed 67,108,864-bit synchronous dynamic randomaccess memories, organized as 4,194,304x4×4, 2,097,152×8×4, 1,048,576×16×4 word × bit × bank , respectively.

VNA-28

Contextual Info: High Directivity Monolithic Amplifier 50Ω VNA-28A+ 0.5 to 2.5 GHz The Big Deal • 2.8 & 5V operation • High directivity, 14-21 dB • Footprint compatible with VNA-28 CASE STYLE: DL1020 Product Overview VNA-28A+ is a wideband amplifier providing high directivity. It has built-in DC blocks at input and output and

PD444016-8

Contextual Info: データ･シート MOS 集積回路 MOS Integrated Circuit PD444016 4M ビット CMOS 高速スタティック RAM 256K ワードx16 ビット μPD444016 は 4,194,304 ビット（262,144 ワード×16 ビット）の CMOS 高速スタティック RAM です。

100-PIN

Abstract: SA10 SA11 upd4443362
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4443362 4M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 128K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE Description The µPD4443362 is a 131,072 words by 36 bits synchronous static RAM fabricated with advanced CMOS

M144

Abstract: PD444016-8
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD444016 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT Description The μPD444016 is a high speed, low power, 4,194,304 bits 262,144 words by 16 bits CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The μPD444016 is packaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

equivalent transistor D1555

Abstract: transistor d1555 transistor d1047 d1555 transistor TRANSISTOR DATASHEET D1555 delta plc DVP 14SS DVP-40EH DVP-10SX d1555 D1557
Contextual Info: PLC PLC DVP-PLC Application Manual 【Programming】 Table of Contents Chapter 1 Basic Principles of PLC Ladder Diagram Foreword: Background and Functions of PLC . 1-1 1.1 The Working Principles of Ladder Diagram . 1-1

DVP-10SX

Abstract: DVP-14SS delta plc DVP 14SS DVP-32EH DVP-80EH DVP-64EH DVP-32ES DVP-48EH DVP-60ES DVP-20EX
Contextual Info: PLC www.delta.com.tw/industrialautomation PLC ASIA Delta Electronics, Inc. Taoyuan1 31-1, Xingbang Road, Guishan Industrial Zone, Taoyuan County 33370, Taiwan, R.O.C. TEL: 886-3-362-6301 / FAX: 886-3-362-7267 Delta Electronics Jiang Su Ltd. Wujiang Plant3