M168 Search Results

M1156

Abstract: M1159 m1295 M1591 m169 M1093 M1161
Contextual Info: P art Number 1.040 MAX. 2.00 MAX. *Long Life *Si lver Bonnet *Black Bonnet Des ign V oltage A mps MS C P L ife Hours F ilament T ype C M1459 C M1651 4.00 5.00 .80 .60 2.5 3.0 300 20 C -2R C -2R C M1611 C M1613 C M1680 C M1129 5.40 6.00 6.00 6.40 1.86 1.50

SD1463

Abstract: TCC0204-125
Contextual Info: SD1463 TCC0204-125 RF & MICROWAVE TRANSISTORS VHF/UHF APPLICATIONS . . . 400 MHz 28 VOLTS EFFICIENCY 60% COMMON EMITTER GOLD METALLIZATION P OUT = 125 W MIN. WITH 7.0 dB GAIN .400 x .425 8LFL (M168) epoxy sealed O RDER CODE SD1463 BRANDING 0204-125 PIN CONNECTION

M1867

Abstract: m1813 M1891 M1488 M1888
Contextual Info: .406 MAX . 1.19 MAX . P art Number Des ign V oltage A mps C M49 C M1809 2.00 2.00 .06 .06 C M43 C M45 C M1490 C M1688 2.50 3.20 3.20 3.75 C M1804 C M1867 C M1850 C M1851 C M1906 L ife Hours F ilament T ype .04 .02 1,000 1,000 S -2 C -6 .50 .35 .16 .09 .50

M1686-A

Contextual Info: JM 3 / 9 4 Qoì&csux$L _PRAWN BY / DATE CARY, ILLINOIS M1686-A APPROVED BY / DATE PART NUMBER M1686-AC.DWG NONE DRAWING SCALE FILE NAME_ GENERAL USE* ] YES □ NO REVISION S O •195 .178 MAX ?,003 WINDING CONFIGURATION L 3-4 1 rm ^ ^ ^ L 1-2

Contextual Info: M1681 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.68p‘ C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min.100 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)0.3 Semiconductor MaterialSilicon Package StyleAxial-B

Contextual Info: SD1463 TCC0204-125 RF & MICROWAVE TRANSISTORS VHF/UHF APPLICATIONS . . . 400 MHz 28 VOLTS EFFICIENCY 60% COMMON EMITTER GOLD METALLIZATION POUT = 125 W MIN. WITH 7.0 dB GAIN .400 x .425 8LFL (M168) epoxy sealed ORDER CODE SD1463 BRANDING 0204-125 PIN CONNECTION

M1867

Abstract: M1809 M316 M1891
Contextual Info: .406 MAX . 1.19 MAX . P art Number Des ign V oltage A mps C M49 C M1809 2.00 2.00 .06 .06 C M43 C M45 C M1490 C M1688 2.50 3.20 3.20 3.75 C M1804 C M1867 C M1850 C M1851 C M1906 L ife Hours F ilament T ype .04 .02 1,000 1,000 S -2 C -6 .50 .35 .16 .09 .50

m1302

Abstract: M1809 M316 M240
Contextual Info: .406 MAX . 1.19 MAX . P art Number Des ign V oltage A mps C M49 C M1809 2.00 2.00 .06 .06 C M43 C M45 C M1490 C M1688 2.50 3.20 3.20 3.75 C M1804 C M1867 C M1850 C M1851 C M1906 L ife Hours F ilament T ype .04 .02 1,000 1,000 S -2 C -6 .50 .35 .16 .09 .50

SD1456

Abstract: push pull class AB RF linear TCC3100
Contextual Info: SD1456 TCC3100 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION

m1305

Abstract: MC-458CA726 MC-458CA726EFB-A10 MC-458CA726EFB-A80 MC-458CA726PFB-A10 MC-458CA726PFB-A80 PD45128163
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA726 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE • Description The MC-458CA726EFB and MC-458CA726PFB are 8,388,608 words by 72 bits synchronous dynamic RAM module on which 5 pieces of 128M SDRAM : µPD45128163 are assembled.

IC R2A3 DATASHEET FREE

Abstract: R2A3 IC R2A3 R2A11 D23-D26 r2a1 D8-D13 IC R2A3 DATASHEET R2A3 02 mark d23
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4564EC727 64M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4564EC727 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of 128 M SDRAM: µPD45128441 are assembled.

ra11b

Abstract: L 146 CB MC-4532DA727 MC-4532DA727EF-A75 MC-4532DA727PF-A75 PD45128441 PD45128441G5
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532DA727 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4532DA727 is an 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128M SDRAM: µPD45128441 are assembled.

Contextual Info: GEC P LES S EY w , O c t o b e r 1994 ADVANCE INFORMATION S E M I C O N D U C T O R S D S 4 0 0 3 - 1.4 SL6610 DIRECT CONVERSION FSK DATA RECEIVER This device is an advanced direct conversion receiver for operation up to 470MHz. The design is based on the SL6609A

Contextual Info: Si GEC PLESSEY ADVANCE INFORMATION S E M I C O N D U C T O R S SL6610 DIRECT CONVERSION FSK DATA RECEIVER Supersedes the October 1994 edition, DS4003 - 1.4 This device is an advanced direct conversion receiver for operation upto470MHz. The design is based on the SL6609A

Contextual Info: w . G FC PTFSSFY u liV > S E M I . O M I JULY 1995 PRELIMINARY INFORMATION C I (* K S D.S. 3653 2.3 SL6619 DIRECT CONVERSION FSK DATA RECEIVER The SL6619 is an advanced Direct Conversion FSK Data Receiver for operation up to 450MHz. The device integrates

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11217-1E MEMORY CMOS 4M x 64 FAST PAGE MODE DRAM MODULE MB8504D064AA-60/-70 CMOS 4M × 64 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB8504D064AA is a fully decoded, CMOS Dynamic Random Access Memory DRAM module

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11245-1E MEMORY Unbuffered 4 M x 64 BIT HYPER PAGE MODE DRAM DIMM MB8504E064AB-60/-70 Unbuffered, 4 M × 64 Bit Hyper Page Mode DIMM, 3.3 V, 1-bank, 2 KR • DESCRIPTION The Fujitsu MB8504E064AB is a fully decoded, CMOS Dynamic Random Access Memory DRAM module

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11130-1E MEMORY Unbuffered 2 M x 64 BIT SYNCHRONOUS DYNAMIC RAM DIMM MB8502S064EG-100/-84/-67 168-pin, 4 Clock, 1-bank, based on 2 M × 8 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8502S064EG is a fully decoded, CMOS Synchronous Dynamic Random Access Memory

Contextual Info: DUAL IN-LINE TYPE MODULE FUJITSU SEMICONDUCTOR DATA SHEET 168 PIN PLASTIC To Top / Package Lineup / Package Index MDS-168P-P04 168-pin plastic DIMM socket type Lead pitch 50 mil Motherboard material Plastic Mounted package material Plastic Pin plating Gold

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11243-1E MEMORY Unbuffered 1 M x 64 BIT HYPER PAGE MODE DRAM DIMM MB8501E064AD-60/-70 Unbuffered, 1 M × 64 Bit Hyper Page Mode DIMM, 3.3 V, 1-bank, 4 KR • DESCRIPTION The Fujitsu MB8501E064AD is a fully decoded, CMOS Dynamic Random Access Memory DRAM module

MAX4176

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11128-1E MEMORY Unbuffered 4 M x 64 BIT SYNCHRONOUS DYNAMIC RAM DIMM MB8504S064AG-100/-84/-67 168-pin, 4 Clock, 2-bank, based on 2 M × 8 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8504S064AG is a fully decoded, CMOS Synchronous Dynamic Random Access Memory

MB8117800A

Abstract: dg168
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11220-1E MEMORY CMOS 2M x 64 FAST PAGE MODE DRAM MODULE MB8502D064AA-60/-70 CMOS 2M × 64 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB8502D064AA is a fully decoded, CMOS Dynamic Random Access Memory DRAM module

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11242-1E MEMORY Unbuffered 1 M x 64 BIT HYPER PAGE MODE DRAM DIMM MB8501E064AC-60/-70 Unbuffered, 1 M × 64 Bit Hyper Page Mode DIMM, 3.3 V, 1-bank, 1 KR • DESCRIPTION The Fujitsu MB8501E064AC is a fully decoded, CMOS Dynamic Random Access Memory DRAM module