M29F040 Search Results

Contextual Info: SGS-THOMSON raDwunnteinMiiiiiDei M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY • 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 10^s typical ■ ERASE TIME - Block: 1.0 sec typical

A/M29F040B(45/55/70/GR-468

Contextual Info: M29F040B 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory PR E LIM IN A R Y DATA • SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME - 8 jas per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

AI01378

Abstract: M29F040 PLCC32 TSOP32 B29F040 512k x 8 chip block diagram plcc32 pinout
Contextual Info: M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical

M29F040

Abstract: M29F040B PDIP32 PLCC32 TSOP32
Contextual Info: M29F040B 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

M29F040

Abstract: M29F040B PDIP32 PLCC32 TSOP32
Contextual Info: M29F040B 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory • SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8 µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS ■

M29F0408

Abstract: IN3064 M29F040 M29F040 motorola M29F040-75
Contextual Info: Order this document by M29F040/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F040 Advance Information 4M CMOS Sector Erase Flash Memory The M29F040 is a 4M, 5 V-only, sector erase flash memory organized as 512K bytes of 8 bits each. The M29F040 is offered in JEDEC-standard 32-pin packages.

M29F040

Abstract: PLCC32 TSOP32
Contextual Info: M29F040 4 Mbit 512Kb x 8, Block Erase Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical PROGRAM/ERASE CONTROLLER (P/E.C.)

1N914

Abstract: M29F040 PLCC32 TSOP32
Contextual Info: w . SGS-THOMSON k7# . M29F040 SINGLE SUPPLY 4 Megabit 512Kx 8, Sector Erase FLASH MEMORY • FAST ACCESS TIME: 70ns ■ 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ BYTE PROGRAMMING TIME: 10ps typical ■ ERASE TIME - Sector: 1.0 sec typical

M29F040

Abstract: M29F040B PLCC32 TSOP32 STMicroelectronics PLCC trace code
Contextual Info: M29F040 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME

tsop32 8x20

Abstract: TSOP32 Package M29F040 PLCC32 QR124 TSOP32 m29F040 micron
Contextual Info: QUALIFICATION REPORT M29F040 T6-U20: 4 Mb x8 FLASH MEMORY in PLCC32 and TSOP32, AGRATE R1 DIFFUSION LINE INTRODUCTION The M29F040 is a 4 Mb Single Supply (5V) Flash memory organized as 512K bytes of 8 bits each. It is offered in PLCC32 and TSOP32 packages. It can be programmed and erased in-system or in standard

7130H

Abstract: tvh07
Contextual Info: S G S -T H O M S O N M29F040 [M Q É » i[L i{ O T ( M ( g § SINGLE SUPPLY 4 Megabit (512K x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA • FAST ACCESS TIME: 70ns ■ 5V ± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS ■ 5 V ± 10% SUPPLY VOLTAGE In READ

SI931

Abstract: m29f040a
Contextual Info: _ M29F040 4 Mbit 512Kb x 8, Block Erase Single Supply Flash Memory • 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 10jis typical ■ ERASE TIME - Block: 1.0 sec typical

M29F040

Abstract: PLCC32 plcc32 pinout TSOP32 B29F040
Contextual Info: M29F040 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical

29F040C

Abstract: A16HR M29F040CT90 M29F040CF90 M29F040IF70
Contextual Info: Order this docum ent by M29F040/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F040 Advance Information 4M CMOS Sector Erase Flash Memory PLCC CASE 989A -01 The M29F040 is a 4M, 5 V-only, sector erase flash memory organized as 512K bytes of 8 bits each. The M29F040 is offered in JEDEC-standard 32-pin packages.

M29F040B

Contextual Info: White Electronic Designs WED7Fx325ZXEBSNyyC 2, 4, and 8MB, STmicro, 5.0V 4Mb Based, Uniform Sector FLASH Module Family PIN CONFIGURATION FEATURES „ 2, 4, and 8MB Density FLASH Modules „ Organized as; 512K x 32, 2 x 512K x 32, and 4 x 512K x 32 „ Based on STmicro's M29F040B 5.0V FLASH Device

M29F040

Abstract: M29F040B PLCC32 TSOP32
Contextual Info: M29F040 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory NOT FOR NEW DESIGN M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ERASE TIME

A/M29F040B(45/55/70/GR-468

Abstract: AN1122 JESD97 M29F040 M29F040B PLCC32 TSOP32
Contextual Info: M29F040B 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory • SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8 µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS ■

M29F040

Abstract: M29F040B PDIP32 PLCC32 TSOP32 AI02902
Contextual Info: M29F040B 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory • SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8 µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS ■

flash memory

Contextual Info: GENERAL INDEX FLASH MEMORY, SINGLE VOLTAGE 5V M29F100T. M29F100B 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O R Y . M29F200T, M29F200B 2 Mb (x8/x16. Block Erase) SINGLE SUPPLY FLASH M EM O R Y. M29F040 4 Mb (512K x 8, Block Erase) SINGLE SUPPLY FLASH M E M O R Y .

plcc32 pinout

Abstract: PLCC32 TSOP32 M29F040 X5555
Contextual Info: M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY PRELIMINARY DATA FAST ACCESS TIME: 70ns 5V ± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS 5V ± 10% SUPPLY VOLTAGE in READ OPERATIONS BYTE PROGRAMMING TIME: 10µs typical ERASE TIME

Contextual Info: £ = 7 S G S -T H O M S O N M Q l3 m i© W [ t l g § M 2 7 C 4 0 5 4 Megabit (512K x 8 OTP ROM • PIN COMPATIBLE with the 4 MEGABIT, 5V ONLY FLASH MEMORY (M29F040) ■ VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE

AN1122

Abstract: JESD97 M29F040 M29F040B PLCC32 TSOP32
Contextual Info: M29F040B 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory • SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8 µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS ■

M29F040

Abstract: PLCC32 TSOP32
Contextual Info: M29F040 SINGLE SUPPLY 4 Megabit 512K x 8, Sector Erase FLASH MEMORY FAST ACCESS TIME: 70ns 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS BYTE PROGRAMMING TIME: 10µs typical ERASE TIME – Sector: 1.0 sec typical – Bulk: 2.5 sec typical

Contextual Info: S G S -T H O M S O N B M llLlim W D ei_ M29F040 SINGLE SUPPLY 4 Megabit 512Kx 8, Sector Erase FLASH MEMORY • FAST ACCESS TIME: 70ns ■ 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ BYTE PROGRAMMING TIME: 10^s typical ■ ERASE TIME