M30 TF 125 Search Results

THERMAL Fuse m20 tf 115 c

Abstract: m33 tf 130 THERMAL Fuse m30 tf 125 c M33 thermal fuse M33 fuse m20 thermal fuse 115 THERMAL Fuse jfm m33 thermal fuse M10 microtherm m33 thermal fuse THERMAL Fuse m20
Contextual Info: Thermal Fuses JFM M Features: ● Small physical size,ensures fast response to overtemperature. ● 1A 240Vac rated ● Thermal element protected mechanically and against oxidization. ● Single shot.Non resettable. ● Accurate melting points,range from 102°C to

2SJ449

Abstract: m30 tf 125 transistor 2sj449 M30 THERMAL CUTOFF IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ449 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS signed for high voltage switching applications. in millimeters 4.5 ±0.2

HS-5104RH

Abstract: HS1-5104RH qnt 361 on29 km447 AD437 DIFFERENTIAL/HS1-5104RH
Contextual Info: HARR IS SEMICON] SE CTO R SflE D • 430 227 1 DG 43 7b ê flüM H H A S HS-5104RH HARRIS SEMICONDUCTOR - F 7 ? 'û S - ¥ 0 Radiation Hardened Low Noise Quad Operational Amplifier D ecem ber 1992 Pinout Features HS1-5104RH 14 PIN CERAMIC SIDEBRAZED DIP)

2SJ449

Abstract: IEI-1213 MEI-1202 MF-1134
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

XS2M12PA370L1

Abstract: Telemecanique XSC-h203629 walkie talkie circuit diagram XS8E1A1PAL01M12 XS630B XS612B xsc-h207629 Telemecanique XS2m XS4P18AB120 telemecanique xs4
Contextual Info: Proximity Sensors Catalog September File 9006 07 CONTENTS Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Auto-Adaptable and Standard Flat Inductive Proximity Sensor . . . . . . . 180 Auto-Adaptable and Standard Tubular Inductive Proximity Sensor . . . . 184

C11892E

Abstract: 2SJ495 TEA-1035 A3856 m30 tf 125
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor in millimeter designed for high current switching applications. 10.0 ± 0.3

tba120s

Contextual Info: A PLESSEY W Solid State » TBA120S LIMITING IF AMPUFIER/FM DETECTOR The TBA120S is a symmetrical 8 -stage lim itin g am plifier w ith a symmetrical coincidence demodulator and remote DC volume control. The circu it is especially suited fo r the sound IF section o f T V receivers and fo r FM /IF

Contextual Info: 3 3 B Ä C D P 1 8 5 7 C 4-Bit Bus Buffer/Separator August 1996 Features Description • Provides Easy Connection of I/O to CDP1800-Series Microprocessor Data Bus The CDP1857C is a 4-bit CMOS non-inverting bus separator designed for use in CDP1800-series microprocessor systems. It can

Contextual Info: AMPLIFONIX INC MSE D • Of lObEE? □□□□Q4S 3 ■ AFX Full Perform ance Am plifiers ■B- 7 < > -g 9 - 5 / Flatpack Package i-^ -c r -o i Model No. Freq. Range MHz FP6146 FP9130 5-500 200-2000 Gain m Typ 21.0 23.5 Min 20.5 22.0 Noise Figure (dB) Typ

carlogavazzi

Abstract: K7M-DR20U K7M-DR60u K7M-DR40U K7M-DR30U K7M-DRT40U koyo PLC module PMU LG PMU-830TT PMU-300BT
Contextual Info: Overview2004CA.qk 12/16/04 11:29 AM Page 1 Gross Automation 877 268-3700 • www.carlogavazzisales.com · sales@grossautomation.com Overview2004CA.qk 12/16/04 11:29 AM Page 2 CARLO GAVAZZI – A Global Force In Offering the Complete Package CARLO GAVAZZI offers a vast array of high quality products, which provide you the optimum solutions to your

Contextual Info: A dvanced P o w er Te c h n o l o g y APT10M25BNFR APT10M30BNFR POWER MOS IV‘ 100V 75A 0.025Q 100V 75A 0.030Q AVALANCHE RATED FREDFET N -C H A NN EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: •I 43 02 27 1 0 Q S 3 7 b l 35fl ■ HAS 2N6788 Jg HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T0-205A F BOTTOM VIEW • 6.0 A , 1 0 0V • rD S on = 0 - 3 0 n • S O A is P o w er-D issip atio n Lim ited

Contextual Info: MWS5114 HARRIS S E M I C O N D U C T O R 1024-Word x 4-Bit LSI Static RAM August 1996 Description Features • The M W S5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate comple­ mentary MOS CMOS technology. It is designed for use in

2SJ598 equivalent

Abstract: 2SJ598 2SJ598-Z 2sJ598 transistor M2SJ598
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. PART NUMBER PACKAGE 2SJ598 TO-251 MP-3 2SJ598-Z

M2SJ598

Abstract: 2SJ598 equivalent 2sJ598 transistor 2SJ598 2SJ598-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE 2SJ598 TO-251 MP-3 2SJ598-Z TO-252 (MP-3Z) for solenoid, motor and lamp driver.

Contextual Info: HARRIS SEMICOND SECTOR bflE D HARRIS SEMI CONDUCT OR REGISTRATION PENDING Currently Available as FRS9240 D, R, H • L»30EE71 0051200 TMT ■ 2N7319D, 2N7319H 2N7319H Radiation Hardened P-Channel Power MOSFETs November 1993 Package Features • HAS 7A, -200V, RDS(on) = 0.735Q

k244 transistor

Abstract: AL-P11 k244 PX1-C12S PX1-C18S AL-SP21 PM2S sK413 AL-SK21 AL-SN31
Contextual Info: Limit Switches General information Limit switches, AL and K244 series • Description FUJI AL and K244 series limit switches have wide application in such industrial equipment as machine tools, printing machines, and transfer machines. These switches feature a sturdy aluminum diecast housing that is highly resistant to oil,

Cdb450c24

Abstract: 5PNR-2876Z Cdb450 CFWM450G BA4116FV g015b K4-18 SSOP-B16 CFWM450 BM116FV
Contextual Info: Communication ICs FM IF detector for cordless telephones I BA4116FV The BM 116FV is an IC with an internal mixing circuit, IF circuit, wave detection circuit, RSSI circuit, and noise detec­ tion circuit. Because it can operate at low voltages, it is ideal for use in cordless telephones.

1006-01M

Abstract: 006-01M bc10d 2BSK
Contextual Info: Fuji New Semiconductor Products . -r- J T ~ Sk I ^ t — J v ' I . Tty h 1 \ y 6 0 0 V /1 0 A I O D Ï 1 M B C 1 0 -0 6 0 , 1 M B C 1 0 D -0 6 0 ,1 M B G 1 0 D -0 6 0 Features K 2 < 7 V '° 7 / r - v lE J S fc sifjfc'fefe, i f 4 '7 < RBSOA, SCSOA 4' ¿f

T6950A

Abstract: AQS51-KAM t6961 CLCM1H112 M07M-A10 H7015B1020 EW7731A4000 VA3300 R8810A1018 K42008268-001
Contextual Info: Product catalog ACS Environmental Controls Honeywell Srl ACS Environmental Controls Via Philips, 12 20052 Monza Telefono: +39 039 2165.1 Email: info@honeywell.it Honeywell A.Ş. Otomasyon ve Kontrol Sistemleri Çayıryolu Sokak, Üçgen Plaza, No:7 Kat:5/6/7

m33 tf 130

Abstract: 1001 fba hybrid
Contextual Info: Am79C02/03/031 A A M D ÎI Dual Subscriber Line Audio ProcessingCircuit (DSLAC ) Devices TABLE OF CONTENTS Distinctive C h a ra c te ris tic s .2-7

dc m7

Abstract: PA2211T1M
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2211T1M P-CHANNEL MOS FET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The μ PA2211T1M is P-channel MOS Field Effect Transistor designed 2.9±0.1 for power management applications of portable equipments, such as

Contextual Info: • 43 05 57 1 0 0 5 4 0 ^ 5 SSI ■ HAS IRFD12 0 /1 2 1 /1 2 2 /1 2 3 IRFD120R/121R/122R/123R I HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4-PIN DIP TO P VIEW • 1.3A and 1.1 A, 80V - 100V • rDS(on) = 0-30n and 0.40ii