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    M5321040 Search Results

    M5321040 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    M53210400CB0-C50 Samsung Electronics Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V Original PDF
    M53210400CB0-C60 Samsung Electronics Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V Original PDF
    M53210400CW0-C50 Samsung Electronics Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V Original PDF
    M53210400CW0-C60 Samsung Electronics Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V Original PDF
    M53210400DB0-C50 Samsung Electronics Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V Original PDF
    M53210400DB0-C60 Samsung Electronics Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V Original PDF
    M53210400DW0-C50 Samsung Electronics Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V Original PDF
    M53210400DW0-C60 Samsung Electronics Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K Refresh, 5V Original PDF
    M53210404BT0-C50 Samsung Electronics 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V Original PDF
    M53210404BY0-C50 Samsung Electronics 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V Original PDF
    M53210404BY0-C60 Samsung Electronics 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: M53210400CW0/CB0 M53210410CW0/CB0 DRAM MODULE M53210400CW0/CB0 & M53210410CW0/CB0 Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321040 1 0C is a 4Mx32bits Dynamic RAM • Part Identification high density memory module. The Samsung M5321040(1)0C


    Original     		PDF M53210400CW0/CB0 M53210410CW0/CB0 M53210410CW0/CB0 M5321040 4Mx32bits M53210400CW0-C cycles/64ms 24-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53210404BY0/BT0-C 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.1 June 1998 DRAM MODULE M53210404BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53210404BY0/BT0-C 4Mx32 4Mx16 M53210404BY0/BT0-C 4Mx16, 4Mx32bits

    Untitled

    Abstract: No abstract text available
    Text: M53210400DW0/DB0 M53210410DW0/DB0 DRAM MODULE M53210400DW0/DB0 & M53210410DW0/DB0 Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321040 1 0D is a 4Mx32bits Dynamic RAM • Part Identification high density memory module. The Samsung M5321040(1)0D


    Original     		PDF M53210400DW0/DB0 M53210410DW0/DB0 M53210410DW0/DB0 M5321040 4Mx32bits M53210400DW0-C cycles/64ms 24-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53210400DW0/DB0 M53210410DW0/DB0 DRAM MODULE M53210400DW0/DB0 & M53210410DW0/DB0 Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321040 1 0D is a 4Mx32bits Dynamic RAM • Part Identification


    Original     		PDF M53210400DW0/DB0 M53210410DW0/DB0 M53210400DW0/DB0 M53210410DW0/DB0 M5321040 4Mx32bits 24-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53210404CY0/CT0-C 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53210404CY0/CT0-C DRAM MODULE M53210404CY0/CT0-C


    Original     		PDF M53210404CY0/CT0-C 4Mx32 4Mx16 M53210404CY0/CT0-C 4Mx16, 4Mx32bits 4Mx16bits