M53222 Search Results

km416c1200aj

Abstract: KM416C1200A
Contextual Info: DRAM MODULE KM M5322200A W/AW G M5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung M5322200AW is a 2M bit x 32 D ynamic RAM high density m em ory module. The Samsung KM M 5322200AW consists of four CMOS

Contextual Info: DRAM MODULE M5322200AW/AWG KM M5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G ENERA L DESC RIPTIO N FEATURES T h e S a m su n g K M M 5 3 2 2 2 0 0 A W is a 2M b it x 32 D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . T h e

KMM5322204AW

Contextual Info: M5322204AW DR A M Modul e ELECTRONICS KM M5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung M5322204AW is a 2M bit x 32 Dynamic RAM high density memory module. The

S/KMM5322200BW/BWG-6

Abstract: M53222
Contextual Info: K MM5 3 2 2 2 0 0 B W DRAM Modul e ELECTRONICS M5322200BW/BWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KM M5322200BW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung M5322200BW consists of four CMOS

Contextual Info: DRAM MODULE M5322204C2W/C2WG 2Mx32 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE M5322204C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from M5322204CW /CWG to M5322204C2W /C2W G caused by PCB revision .

Contextual Info: DRAM MODULE M5322200CW/CWG M5322200CW/CWG with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Sam sung KM M 5322200CW is a 2M x32bits RAM high density memory module. The Dynamic • Part Identification Samsung

Contextual Info: DRAM MODULE M5322200AW/AWG M5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung M5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung M5322200AW consists of four CMOS

Contextual Info: DRAM MODULE M5322204C2W/C2WG 2Mx32 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS DRAM MODULE M5322204C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from M5322204CW /CWG to M5322204C2W /C2W G caused by PCB revision .

KMM5322200BW/BWG-7

Contextual Info: Preliminary M5322200BW/BWG DRAM MODULE M5322200BW/BWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ERA L DESC RIPTIO N FEATURES The Samsung KM M 5322200BW is a 2M bit x 32 • Part Identification Dynam ic RAM high density m em ory module. The

samsung kmm5322204aw

Abstract: Samsung 2MX32 EDO simm module KMM5322204a
Contextual Info: DRAM MODULE M5322204AW/AWG M5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Sam sung KM M 5322204AW is a 2M bit * 32 • Part Identification D ynam ic RAM high density m em ory module. The

Contextual Info: DRAM MODULE M5322200CW/CWG M5322200CW/CWG with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Sam sung KM M 5322200CW is a 2M x32bits RAM high density memory module. The Dynamic • Part Identification Samsung

Contextual Info: Preliminary M5322204BW/BWG DRAM MODULE M5322204BW/BWG Fast Page Mode with Extended Data out 2M x32 DRAM SIMM, 5V, 1K Refresh using 1Mx16 DRAM G EN ERA L DESC RIPTIO N FEATURES The Samsung M5322204BW is a 2M bit x 32 Dynamic RAM high density memory module. The