M5362080 Search Results
M5362080 Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|---|
| M53620800CB0-C50 |
|
8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V | Original | 292.9KB | 15 | |||
| M53620800CB0-C60 |
|
8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V | Original | 292.9KB | 15 | |||
| M53620800CW0-C50 |
|
8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V | Original | 292.9KB | 15 | |||
| M53620805BT0-C50 |
|
8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V | Original | 396.74KB | 20 | |||
| M53620805BT0-C60 |
|
8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V | Original | 396.74KB | 20 | |||
| M53620805BY0-C50 |
|
8M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V | Original | 396.74KB | 20 |
M5362080 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: M53620800DW0/DB0 M53620810DW0/DB0 DRAM MODULE M53620800DW0/DB0 & M53620810DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5362080(1)0D |
Original |
M53620800DW0/DB0 M53620810DW0/DB0 M53620810DW0/DB0 M5362080 8Mx36bits 24-pin 28-pin 72-pin | |
|
Contextual Info: Preliminary M53620800DW0/DB0 M53620810DW0/DB0 DRAM MODULE M53620800DW0/DB0 & M53620810DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0D is a 8Mx36bits Dynamic RAM |
Original |
M53620800DW0/DB0 M53620810DW0/DB0 M53620800DW0/DB0 M53620810DW0/DB0 M5362080 8Mx36bits 24-pin 28-pin 72-pin | |
|
Contextual Info: DRAM MODULE M53620805BY0/BT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53620805BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. |
Original |
M53620805BY0/BT0-C 8Mx36 4Mx16 M53620805BY0/BT0-C 8Mx36bits | |
|
Contextual Info: DRAM MODULE M53620805CY0/CT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53620805CY0/CT0-C DRAM MODULE |
Original |
M53620805CY0/CT0-C 8Mx36 4Mx16 M53620805CY0/CT0-C 8Mx36bits |