M54HC00 Search Results

M74HC00

Contextual Info: SGS-THOMSON t^OO«LIOT ô iO(Si M54HC00 M74HC00 QUAD 2-INPUT NAND GATE . HIGH SPEED tpD = 6 ns (TYP.) AT Vcc = 5 V • LOW POWER DISSIPATION Icc = 1 nA (MAX.) AT Ta = 25 °C ■ HIGH NOISE IMMUNITY V nih = V nil = 28 % V cc (MIN.) ■ OUTPUTS DRIVE CAPABILITY

M74HC00B1

Abstract: M74HC00M1R 74hc00 gate M74HC00 M74HC00B1R 74LS00 74HC00 M54HC00 M54HC00F1R M74HC00C1R
Contextual Info: M54HC00 M74HC00 QUAD 2-INPUT NAND GATE . . . . . . . . HIGH SPEED tPD = 6 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUTS DRIVE CAPABILITY 10 LSTTL LOADS BALANCED PROPAGATION DELAYS

FPC-14

Contextual Info: M54HC00 RAD-HARD QUAD 2-INPUT NAND GATE • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 8ns TYP. at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:

M74HC00

Abstract: M74HC00M1R M74HC00B1R 74LS00 74HC00 M54HC00 M54HC00F1R M74HC00C1R 74LS00 truth table M74HC00B1
Contextual Info: M54HC00 M74HC00 QUAD 2-INPUT NAND GATE . . . . . . . . HIGH SPEED tPD = 6 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUTS DRIVE CAPABILITY 10 LSTTL LOADS BALANCED PROPAGATION DELAYS

M54HC00K1

Abstract: M54HC00 M54HC00D M54HC00D1 M54HC00K DILC-14 FPC-14
Contextual Info: M54HC00 RAD-HARD QUAD 2-INPUT NAND GATE • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 8ns TYP. at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:

Contextual Info: M54HC00 RAD-HARD QUAD 2-INPUT NAND GATE • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 8ns TYP. at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:

IC 74HC00

Abstract: tPHL 74hc00 5V 74HC00 74HC00 74hc00 equivalent 74HC00 B1 74hc00 tphl tplh SGS-Thomson 74hc00
Contextual Info: M54HC00 M74HC00 S G S -T tfO M S O N QUAD 2-INPUT NAND GATE HIGH SPEED tpD = 8 ns TYP. at V c c = 5V LOW POWER DISSIPATION Ice = 1 (MAX.) at T a = 25°C HIGH NOISE IMMUNITY V n ih = V n i L = 28% V CC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS vu 1 B1

940900701F

Abstract: 54HC4053 54HC273 940501301F 920305001F 940104801F 920110601F 54HC08 920112001F 940806401F
Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

M54HC132

Abstract: M54HC595KG M54HC138KG 920112001F
Contextual Info: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage • Low power DC dissipation: 1 µA max. at 25 °C • High speed tPD = 8 ns typ. at 25 °C • Symmetrical outputs characteristics

M74HC00

Contextual Info: Sb E G Z T> m 7^2^237 DG3T73D S'ìD • S G T H S C S -T H O M SO N HD»I[L[l RiO gi s G S-THÖHS0N M54HCÖÖ M74HC00 T -*i3 -Z ( QUAD 2-INPUT NAND GATE ■ HIGH SPEED tpD = 8 ns (TYP. at Vcc = 5V ■ LOW POWER DISSIPATION Ice = 1 i*A (MAX.) at Ta = 25°C

54HC4053

Abstract: 940104801F 940900701F 54HC08 940806401F M54HC245K 54HC273 920110501F 940104701F 920110601F
Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed TPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

M54HC132

Abstract: M54HC00 M54HC132D M54HC132K M54HC132K1
Contextual Info: M54HC132 RAD-HARD QUAD 2-INPUT SCHMITT NAND GATE • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 11ns TYP. at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA (MAX.) at TA=25°C HIGH NOISE IMMUNITY: VH(TYP.) = 0.9 V AT VCC = 5 V SYMMETRICAL OUTPUT IMPEDANCE:

940900703F

Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

Contextual Info: M 54H C 00 M 74H C 00 S G S -T H O M S O N [^D K Q [i[L[E©¥[E@[iaD©i QUAD 2-INPUT NAND GATE • HIGH SPEED tpD = 8 ns (TYP.) at V c c = 5V ■ LOW POWER DISSIPATION Ice = 1 M (MAX.) at Ta = 25°C ■ HIGH NOISE IMMUNITY V n i H = VnIL= 280/o V CC (MIN.)

M74HC00B1

Abstract: IC 74LS00 74LS00 integrated circuit 74ls00 tphl tplh 74HC00 54HC 74HC M54HC00 M74HC00 74LS00 PIN
Contextual Info: • ' I - 7 2. / ’ HS-CMOS INTEGRATED CIRCUITS PRELIMINARY DATA Q U A D 2 - IN P U T N A N D G A TE DESCRIPTION T h e M 5 4 /7 4 H C 0 0 is a high speed C M O S Q U A D 2 -IN P U T N A N D G A T E fabricated in silicon gate C 2M O S technology. It has the sam e high speed

IC 74HC00

Abstract: 74hc00 b1 tPHL 74hc00 M74HC00B1N 74HCoo 74HC00 74hc00 equivalent 74hc00 tphl tplh 74LS00 Electrical and Switching characteristics SGS-Thomson 74hc00
Contextual Info: SGS -THOMSON M 54H C 00 M 74HC 00 0 03©i[Li{gT03©[iM0 êS QUAD 2-INPUT NAND GATE HIGH SPEED tpD = 8 ns (TYP. at V c c = 5V LOW POW ER DISSiPATION Ic e = 1 /*A (MAX.) at T a = 2 5 °C HIGH NOISE IM M UN ITY V n ih = V n i l = 280/o V CC (MIN.) O UTPU T DRIVE CAPABILITY

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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