M54HC132 Search Results

M54HC132

Abstract: M54HC00 M54HC132D M54HC132K M54HC132K1
Contextual Info: M54HC132 RAD-HARD QUAD 2-INPUT SCHMITT NAND GATE • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 11ns TYP. at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA (MAX.) at TA=25°C HIGH NOISE IMMUNITY: VH(TYP.) = 0.9 V AT VCC = 5 V SYMMETRICAL OUTPUT IMPEDANCE:

54HC

Abstract: LS132 74HC M54HC132 M74HC132 tPHL 74hc00 74hc00 tphl tplh
Contextual Info: HS-CMOS" INTEGRATED CIRCUITS M54HC132 - H7« C t^ O . PRELIMINARY DATA Q U A D 2 -IN P U T S C H M IT T N A N D G A TE DESCRIPTION The M 5 4 /7 4 H C 1 3 2 is a high speed C M O S Q U A D 2 -IN P U T S C H M IT T N A N D G A TE fabricated in silicon gate C 2M O S technology. It has the same

74HC132 equivalent

Abstract: 74HC132 74HC00 74hc00 tphl tplh
Contextual Info: fZ J M54HC132 M74HC132 S G S T H O M S O N HD Q I[Li©Tri(Q)iD©Ì QUAD 2-INPUT SCHMITT NAND GATE • HIGH SPEED tPD = 21 ns (TYP.) at Vc c = 5V ■ LOW POWER DISSIPATION lCc = 1 /*A (MAX.) at T a = 2 5 ° C ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS ■ HIGH NOISE IMMUNITY

74HC132B

Contextual Info: M54HC132 M74HC132 SGS-THOMSON « im iO T O K S QUAD 2-INPUT SCHMITT NAND GATE • HIGH SPEED tpD = 11 ns TYP. AT V c c = 5 V ■ LOW POWER DISSIPATION Ice = 1fiA (MAX.) AT Ta = 25 °C ■ OUTPUT DRIVE CAPABILITY 10 LSTTLLOADS ■ HIGH NOISE IMMUNITY V h (TYP.) = 0.9 V AT Vcc = 5 V

M74HC132B1

Abstract: SGS-Thomson 74hc00 74HC Logic Package Information 74HC00 SGS Thomson microelectronics IC 74HC00 M54HC132 M54HC132F1R M74HC132 M74HC132B1R M74HC132C1R
Contextual Info: M54HC132 M74HC132 QUAD 2-INPUT SCHMITT NAND GATE . . . . . . . . HIGH SPEED tPD = 11 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 1µA (MAX.) AT TA = 25 °C OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS HIGH NOISE IMMUNITY VH (TYP.) = 0.9 V AT VCC = 5 V SYMMETRICAL OUTPUT IMPEDANCE

Contextual Info: SbE D • 7 ^ 2 3 7 □ □ a 'îû ? ! 1=14 ■ SGTH / T T S C S -T H O M S O N ^7# HO g ®i[Li(girMD(gi M54HC132 M74HC132 S G S-TH0nS0N T - ^ - Z / QUAD 2-INPUT SCHMITT NAND GATE ■ HIGH SPEED tPD = 21 ns (TYP. at VCc = 5V ■ LOW POWER DISSIPATION

940900701F

Abstract: 54HC4053 54HC273 940501301F 920305001F 940104801F 920110601F 54HC08 920112001F 940806401F
Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

M54HC132

Abstract: M54HC595KG M54HC138KG 920112001F
Contextual Info: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage • Low power DC dissipation: 1 µA max. at 25 °C • High speed tPD = 8 ns typ. at 25 °C • Symmetrical outputs characteristics

Contextual Info: M5 4 HC 132 M7 4 HC 132 S G S -T H O M S O N A 7 f RiflDMOîIlILiÊTIWRDDÊi QUAD 2-INPUT SCHMITT NAND GATE • HIGH SPEED tPD = 21 ns TYP. at VCC= 5V ■ LOW POWER DISSIPATION lcc = 1 pA (MAX.) at Ta = 25°C ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS

54HC4053

Abstract: 940104801F 940900701F 54HC08 940806401F M54HC245K 54HC273 920110501F 940104701F 920110601F
Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed TPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

940900703F

Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

940806401F

Contextual Info: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage  Low power DC dissipation: 1 µA max. at 25 °C  High speed tPD = 8 ns typ. at 25 °C  Symmetrical outputs characteristics