M54HC165 Search Results

74HC165

Abstract: 74HC165 truth table
Contextual Info: Æ T SGS-THOMSON M54HC165 M74HC165 *7# H0»[i[LI glíl i]0 Í 8-BIT PISO SHIFT REGISTER * HIGH SPEED tpD = 21 ns (TYP. at VCc = 5V • LOW POWER DISSIPATION ICC = 4 mA (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY V n i H = V n il = 28% Vcc (MIN.) 1 1 B1N

M74HC165B1

Abstract: M74HC165C1R M74HC165 M54HC165 M54HC165F1R M74HC165B1R M74HC165M1R 74HC165 logic diagram
Contextual Info: M54HC165 M74HC165 8 BIT PISO SHIFT REGISTER . . . . . . . . HIGH SPEED tPD = 15 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT TA = 25 °C OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS BALANCED PROPAGATION DELAYS tPLH = tPHL SYMMETRICAL OUTPUT IMPEDANCE

M54HC165

Abstract: M54HC165D M54HC165D1 M54HC165K M54HC165K1
Contextual Info: M54HC165 RAD-HARD 8 BIT PISO SHIFT REGISTER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 15ns TYP. at VCC = 6V LOW POWER DISSIPATION: ICC =4µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:

M74HC165

Contextual Info: r Z T S G S -T H O M S O N ^7# M54HC165 M74HC165 ¡^DO^OiLtKSTTiOiD^S 8 BIT PISO SHIFT REGISTER • HIGHSPEED tPD = 15 ns (TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Icc = 4 (iA (MAX.) AT Ta = 25 °C ■ OUTPUT DRIVE CAPABILITY 1 0 LSTTLLOADS ■ BALANCED PROPAGATION DELAYS

54HC

Abstract: 74HC M54HC165 M74HC165 74HC165 M74HC165B1
Contextual Info: H S-C M O S" INTEGRATED CIRCUITS 4 M54HC165 M74HC165 I P R E L IM IN A R Y D A T A 8-BIT PISO SHIFT REGISTER DESCRIPTION S Th e M 5 4 /7 4 H C 1 6 5 is a high speed C M O S 8-B IT P IS O S H IF T R E G IS T E R fabricated in silicon gate C 2M O S technology. It has the sam e high speed

940900701F

Abstract: 54HC4053 54HC273 940501301F 920305001F 940104801F 920110601F 54HC08 920112001F 940806401F
Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

M54HC132

Abstract: M54HC595KG M54HC138KG 920112001F
Contextual Info: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage • Low power DC dissipation: 1 µA max. at 25 °C • High speed tPD = 8 ns typ. at 25 °C • Symmetrical outputs characteristics

54HC4053

Abstract: 940104801F 940900701F 54HC08 940806401F M54HC245K 54HC273 920110501F 940104701F 920110601F
Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed TPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

74hc165

Abstract: 74LS165 ic PIN DIAGRAM
Contextual Info: SbE D C • 7^237 7 S G M u [M g [M m S - T H O M Q O B ^ b ü OTT ■ S 6 T H S O N M 5 4 H C 1 6 5 i(M (M (g § M 7 4 H C 1 6 5 S G S-THOriSON t -w - - m o s 8-BIT PISO SHIFT REGISTER ■ HIGH SPEED tPD = 21 ns (TYP. at V c c = 5V ■ LOW POWER DISSIPATION

Contextual Info: r z 7 S G S -1 H 0 M S 0 N Ä T# M 5 4 H C i 65 M74HC165 8 BIT PISO SH IFT REGISTER • HIGH SPEED tPD = 15 ns TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Icc = 4 |XA (MAX.) AT T a = 25 °C ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS ■ BALANCED PROPAGATION DELAYS

940900703F

Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

74hc165

Abstract: LS165 M74HC165B1N 10311 54HC 74HC M54HC165 M74HC165 SICK PLS
Contextual Info: SGS-THOMSON M 54HC165 M 74HC165 8-BIT PISO SHIFT REGISTER HIGH SPEED tpD = 21 ns TYP. at VCc = 5V LOW POW ER DISSIPATION lc c = 4 ¿¿A (MAX.) at T a = 25 °C HIGH NOISE IM M U NITY VlMIH = V NIL = 2 8% VCC (MIN.) B1N Plastic Package Ceramic Frit Seal Package

940806401F

Contextual Info: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage  Low power DC dissipation: 1 µA max. at 25 °C  High speed tPD = 8 ns typ. at 25 °C  Symmetrical outputs characteristics

Contextual Info: I G L. SCS-THOMSON M 54H C 165 M 74H C 165 ly 8-BIT PISO SHIFT REGISTER HIGH SPEED tpD = 21 ns TYP. at VCc = 5V LOW POW ER DISSIPATION lCc = 4 (MAX.) at T a = 2 5 °C HIGH NOISE IM M U N ITY V NIH = V NIL = 28% VCC (MIN.) B1N Plastic Package O UTPUT DRIVE CAPABILITY