M54HC30 Search Results

Contextual Info: SbE D • 7^2^237 DG3'î7fl2 W ■ SGTH SGS-THOMSON ilLIOTMgi M54HC30 M74HC30 S G S-THOMSON T - f 3 ~ 2/ 8-INPUT NAND GATE ■ HIGH SPEED tpo = 13 ns TYP. at Vcc = 5V ■ LOW POWER DISSIPATION lCc = 1 /¿A (MAX.) at Ta = 25°C ■ HIGH NOISE IMMUNITY VNIH = VN|L = 28% VCC (MIN.)

M54HC30

Abstract: M54HC30F1R M74HC30 M74HC30B1R M74HC30C1R M74HC30M1R
Contextual Info: M54HC30 M74HC30 8 INPUT NAND GATE . . . . . . . . HIGH SPEED tPD = 12 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE

pin DIAGRAM OF IC 74ls30

Abstract: 74hc30 74ls30 pin diagram ls30 diode 54HC 74HC M54HC30 M74HC30
Contextual Info: M54HC30 M74HC30 SGS-THOMSON 8-1N PUT NAND GATE HIGH SPEED tpo = 13 ns TYP. at V c c = 5V LOW POWER DISSIPATION Ice = 1 pA (MAX.) at T a = 25°C HIGH NOISE IMMUNITY V nih = V nil = 28% V cc (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE

M54HC30

Abstract: M54HC30D M54HC30D1 M54HC30K
Contextual Info: M54HC30 RAD-HARD 8-INPUT NAND GATE • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 13ns TYP. at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN)

Contextual Info: M54HC30 M74HC30 SCS-THOM SON ^7#« [*[MS[i Tr^©[fl©S 8-INPUT NAND GATE • HIGH SPEED tpo = 13 ns TYP. at V c c = 5V ■ LOW POWER DISSIPATION Icc = 1 /¿A (MAX.) at Ta = 25°C ■ HIGH NOISE IMMUNITY V n IH = V nil = 28% Vcc (MIN.) ■ OUTPUT DRIVE CAPABILITY

Contextual Info: r z 7 SGS-THOMSON M54HC30 M74HC30 8 INPUT NANDGATE • HIGHSPEED tp D = 12 n s TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 1 nA (MAX.) AT Ta = 25 ’C ■ HIGH NOISE IMMUNITY V nih = V nil = 28 % V cc (MIN.) ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS

ls30 diode

Abstract: 54HC 74HC M54HC30 M74HC30
Contextual Info: HS-CMOS" INTEGRATED CIRCUITS , o+U / M54HC30 M74HC30 f PRELIMINARY DATA 8-INPUT NAND GATE DESCRIPTION Th e M 5 4 /7 4 H C 3 0 is a high speed C M O S 8 -IN P U T N A N D G A TE fabricated in silicon gate C 2M O S technology. It has the sam e high speed perform ance of LSTTL

74hc30

Contextual Info: M54HC30 M74HC30 SCS-THOMSON Ü Ê tM iy 8-INPUT NAND GATE HIGH SPEED tPD = 13 ns TYP. at VCc = 5V LOW POW ER DISSIPATION lc c = 1 i iA (MAX.) at T a = 2 5 °C HIGH NOISE IMMUNITY VNIH = V nil = 28% Vcc (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE

Contextual Info: SGS-THOMSON ^DO^@l[L[l gïïi(s iQ(gi M54HC30 M74HC30 8 INPUT NAND GATE • HIGH SPEED tpD = 12 ns (TYP.) AT Vcc = 5 V ■ LOW POWER DISSIPATION Icc = 1 HA (MAX.) AT T a = 25 °C * HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.) ■ OUTPUT DRIVE CAPABILITY

940900701F

Abstract: 54HC4053 54HC273 940501301F 920305001F 940104801F 920110601F 54HC08 920112001F 940806401F
Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

M54HC132

Abstract: M54HC595KG M54HC138KG 920112001F
Contextual Info: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage • Low power DC dissipation: 1 µA max. at 25 °C • High speed tPD = 8 ns typ. at 25 °C • Symmetrical outputs characteristics

54HC4053

Abstract: 940104801F 940900701F 54HC08 940806401F M54HC245K 54HC273 920110501F 940104701F 920110601F
Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed TPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

940900703F

Contextual Info: M54HCxxx M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Features • 2 to 6 V operating voltage ■ Low power DC dissipation: 1 µA max at 25°C ■ High speed tPD = 8 ns typ at 25°C ■ Symmetrical outputs characteristics ■ High noise immunity: 28% of min VCC

940806401F

Contextual Info: M54HCxxx, M54HCTxxx Rad-hard high speed 2 to 6 V CMOS logic series Datasheet - production data Features • 2 to 6 V operating voltage  Low power DC dissipation: 1 µA max. at 25 °C  High speed tPD = 8 ns typ. at 25 °C  Symmetrical outputs characteristics