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Micron Technology Inc M58WR064KT7AZB6E IC FLASH 64MBIT PARALLEL 56VFBGA
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DigiKey	M58WR064KT7AZB6E	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Micron Technology Inc M58WR064KT7AZB6F-TR IC FLASH 64MBIT PARALLEL 56VFBGA
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DigiKey	M58WR064KT7AZB6F-TR	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Others M58WR064KT7AZB6F INSTOCK
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Chip 1 Exchange	M58WR064KT7AZB6F		986			1 - 10 - 100 - 1000 - 10000 -	Get Quote

M58WR064KT Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
M58WR064KT70ZB6F TR		Micron Technology	Integrated Circuits (ICs) - Memory - IC FLASH 64M PARALLEL 56VFBGA		Original	PDF
M58WR064KT70ZB6FTR		Numonyx	Memory, Integrated Circuits (ICs), IC FLASH 64MBIT 70NS 56VFBGA		Original	PDF
M58WR064KT7AZB6E		Numonyx	Memory, Integrated Circuits (ICs), IC FLASH 64MBIT 70NS 56VFBGA		Original	PDF
M58WR064KT7AZB6F TR		Micron Technology	Integrated Circuits (ICs) - Memory - IC FLASH 64M PARALLEL 56VFBGA		Original	PDF
M58WR064KT7AZB6FTR		Numonyx	Memory, Integrated Circuits (ICs), IC FLASH 64MBIT 70NS 56VFBGA		Original	PDF

M58WR064KT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
F8000-FFFFF Abstract: No abstract text available Text: M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 16-, 32-, 64-Mbit x16, multiple bank, burst 1.8 V supply Flash memories Features Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers	Original	PDF	M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 64-Mbit F8000-FFFFF
M58WR032KT Abstract: M58WR032KB M58WR064KB M58WR016KT numonyx 106 ball 15H101 VFBGA56 M58WR064KT M58WR064K M58WR016KB Text: M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 16-, 32-, 64-Mbit x16, multiple bank, burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers	Original	PDF	M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 64-Mbit M58WR064KB numonyx 106 ball 15H101 VFBGA56 M58WR064KT M58WR064K
15H101 Abstract: No abstract text available Text: M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 16-, 32-, 64-Mbit x16, multiple bank, burst 1.8 V supply Flash memories Features Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers	Original	PDF	M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 64-Mbit 15H101
M58WR064KT Abstract: M36W0R M36W0R604 Text: M36W0R6040T3 M36W0R6040B3 M36W0R6050T3 M36W0R6050B3 64-Mbit 4 Mbits x16, multiple bank, burst Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP Preliminary Data Features • Multichip package – 1 die of 64 Mbits (4 Mbits x16) flash	Original	PDF	M36W0R6040T3 M36W0R6040B3 M36W0R6050T3 M36W0R6050B3 64-Mbit 16-Mbit 32-Mbit M36W0R6050T3: 8810h M58WR064KT M36W0R M36W0R604
M36W0R5040 Abstract: M36W0R5040T7 M69KB024AB M36W0R6040T7 M58WR032KT M36W0R5030T7 Numonyx MCP Text: M36W0Rx0x0x7 32- or 64-Mbit 2 or 4 Mbits x 16, multiple bank, burst flash memory and 8-Mbit (512 Kbit x16) or 16-Mbit (1 Mbit x 16) PSRAM MCP Features Multichip package – 1 die of 32 or 64 Mbits (2 or 4 Mbits x 16) flash memory – 1 die of 8 Mbits (512 Kbits x 16) or 16 Mbits	Original	PDF	M36W0Rx0x0x7 64-Mbit 16-Mbit 32-Mbit M36W0R5030T7 M36W0R5040T7: 8814h M36W0R5030B7 M36W0R5040B7: 8815h M36W0R5040 M36W0R5040T7 M69KB024AB M36W0R6040T7 M58WR032KT Numonyx MCP