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    Untitled

    Abstract: No abstract text available
    Text: • M655452 OOlblSM Sb2 ■ INR HEXFRED Other Products From IR INTERNATIONAL RECTIFIER bSE II Ultra-Fast Soft Recovery Part Number VRW M iF Typ @ 95<'c (V) V FM @ Ir @ Typ Typ 'F(T»P) VRWM RthJC ■ rrm Irr (nS) <A) (V) mA • c /w (A) HFA0BTB60 8 1.7 5


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    PDF M655452 HFA0BTB60 HFA15TB60 HFA25TB60 HFA16TA60C HFA30TA60C 15/leg T0-220 HFA15PB60 HFA25PB60

    Untitled

    Abstract: No abstract text available
    Text: M655452 International IOR]Rectifier DDlSb70 352 • PD-9.703A IRFR214 IRFU214 HEXFET Power M O SFET • • • • • • • INR Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR214 Straight Lead (IRFU214) Available in Tape & Reel Fast Switching


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    PDF M655452 DDlSb70 IRFR214 IRFU214 IRFR214) IRFU214)

    Untitled

    Abstract: No abstract text available
    Text: 4655452 International ior Rectifier HEXFET Power MOSFET • • • • • • 0014544 4b2 * I N R PD-9.566B IRC634 INTERNATIONAL b5E R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements


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    PDF IRC634 0-45C2

    595-PH

    Abstract: 30V 595PH
    Text: International k ?r Rectifier HEXFET Power MOSFET • • • • PD-9.847 4655452 0015122 312 * I N R _ IR L IZ 24G INTERNATIONAL RECTIFIER b5E » Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive


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    PDF O-220 M655452 0015R27 IRLIZ24G 595-PH 30V 595PH

    Untitled

    Abstract: No abstract text available
    Text: I . . I P D -5.039 International XQR Rectifier IGBT SIP MODULE Features • • • • C P V 363 M4 U preliminart UltraFast IGBT 1 I Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes


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    PDF 360Vdc, MAS5M52

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-6.057D international I R Rectifier IR 5 1 H D 7 3 7 SELF-OSCILLATING HALF-BRIDGE Features Product Summary • Output Power MOSFETs in half-bridge configuration 300V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation


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    PDF IR51HD737