M80UFG Search Results

Contextual Info: M60UFG M80UFG M100UFG HIGH VOLTAGE RECTIFIERS 100nS RECOVERY AXIAL LEADED HERMETICALLY SEALED V rw m RR in. mm .300(7.62) Max. = 6 0 0 0 -10000V 25mA = 100nS 1.00(25.4) Min. .130(3.30) Max. •020±.003 (,50±.08) ELECTRICAL CHARACTERISTICS AND MAXIMUM RA1"INGS

1N6532 equivalent

Abstract: 1N6528 M100UFG JX6528 1n6535 jantxv RM117 1N6531 1N6535 1N6530 1N6532
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 9 January 2007. INCH-POUND MIL-PRF-19500/577C 6 October 2006 SUPERSEDING MIL-PRF-19500/577B 19 February 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY,

1N6528

Abstract: M25UFG RA641 58A2 1N6535 RA644 11n65 RM109 M50FG RM117
Contextual Info: T " 0 3 - 0 9 T ' O S - f t I INCH-PQUND I MI L -S-19500/577 5 Ap r i l 1989 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE TYPES 1N6528 THROUGH 1N6535 JANTX, JANTXV, AND JANS This specification is approved for use by all Depart­