MA 1050 DATASHEET Search Results
MA 1050 DATASHEET Result Highlights (2)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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HI1-0509-7 |
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HI1-0509 - Differential Multiplexer, 1 Func, 4 Channel, CMOS, CDIP16 |
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HI1-0509A/B |
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HI1-0509 - Differential Multiplexer, 1 Func, 4 Channel, CMOS, CDIP16 |
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MA 1050 DATASHEET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 120 MHz Rated Current ΔT = 20K DC Resistance Type Value Unit Tol. Z 1000 Ω ±25% Z 1050 Ω typ. IR RDC 600 mA max. 0.30 |
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74279205Contextual Info: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 120 MHz Rated Current ΔT = 20K DC Resistance Type Value Unit Tol. Z 1000 Ω ±25% Z 1050 Ω typ. IR RDC 200 mA max. 0.45 |
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742792662Contextual Info: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 120 MHz Rated Current ΔT = 20K DC Resistance Type Value Unit Tol. Z 1000 Ω ±25% Z 1050 Ω typ. IR RDC 600 mA max. 0.30 |
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ElektronikContextual Info: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 120 MHz Rated Current ΔT = 20K DC Resistance Type Value Unit Tol. Z 1000 Ω ±25% Z 1050 Ω typ. IR RDC 200 mA max. 0.45 |
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Contextual Info: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions: |
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TGA4516-TS 20dBm TGA4516 TGA45cal 0007-inch TGA4516-TS | |
Contextual Info: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions: |
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TGA4516-TS 20dBm 1050mA TGA4516 0007-inch | |
TGA4516
Abstract: ids 2560
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TGA4516 20dBm TGA4516 1050mA ids 2560 | |
tga4516Contextual Info: TGA4516 Ka Band 2W Power Amplifier Key Features • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI pHEMT Technology Chip Dimensions: 2.79 x 2.315 x 0.1 mm (0.110 x 0.091 x 0.004) in |
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TGA4516 20dBm | |
sj 2258
Abstract: NT-53F0-0428 lamina led lamina titan High Flux RGB LED 09 0168 65 led 5 rgb MAX 7642 NT-52D0-0429 titan
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FM-0168 sj 2258 NT-53F0-0428 lamina led lamina titan High Flux RGB LED 09 0168 65 led 5 rgb MAX 7642 NT-52D0-0429 titan | |
optical drive blu ray
Abstract: FM-0169 NT-42D1-0425 EZ-46WH-0354 lamina titan nt-5000 lamina titan NT-5000
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FM-0169 NT-4000 optical drive blu ray NT-42D1-0425 EZ-46WH-0354 lamina titan nt-5000 lamina titan NT-5000 | |
NT-53F0-0428
Abstract: lamina titan NT-42D1-0425 NT-52D0-0429 FM-0168
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FM-0168 NT-53F0-0428 lamina titan NT-42D1-0425 NT-52D0-0429 | |
adje1
Abstract: AP2318
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AP1117M AP2318 600mA AP2318 -40oC 125oC adje1 | |
ap2318
Abstract: DFN-3x3-8 AP2318M-ADJTRG1 adje1
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AP1117M AP2318 600mA AP2318 -40oC 125oC DFN-3x3-8 AP2318M-ADJTRG1 adje1 | |
AP2318
Abstract: DFN-3x3-8 china DVD player card circuit diagram AP2318DN AP2318M-ADJTRG1 marking r13k MARKING B9E
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AP1117M AP2318 600mA AP2318 -40oC 125oC DFN-3x3-8 china DVD player card circuit diagram AP2318DN AP2318M-ADJTRG1 marking r13k MARKING B9E | |
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STF1N105K3
Abstract: STP1N105K3
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STF1N105K3, STP1N105K3 O-220FP O-220 STF1N105K3 O-220FP O-220 STP1N105K3 | |
Contextual Info: STE60N105DK5 N-channel 1050 V, 0.1 Ω typ., 44 A Zener protected SuperMESH 5 Power MOSFET in a ISOTOP package Datasheet — preliminary data Features Oreder code VDSS STE60N105DK5 1050 V RDS on max ID PTOT 0.120 Ω 44 A 625 W • Worldwide best RDS(on)*area |
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STE60N105DK5 STE60N105DK5 | |
Contextual Info: STY50N105DK5 N-channel 1050 V, 0.1 Ω typ., 44 A Zener-protected SuperMESH 5 Power MOSFET in a Max247 package Datasheet — preliminary data Features Order code VDS STY50N105DK5 1050 V RDS on max ID PTOT 0.120 Ω 44 A 625 W • Worldwide best RDS(on)*area |
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STY50N105DK5 Max247 STY50N105DK5 Max247 | |
LUXEON Altilon
Abstract: RB1A Luxeon driver schematic AEC-Q101C LAFL B50L80 Luxeon driver schematic 20 w DS-66 Luxeon altilon core DS66
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Luxeon driver schematic 20 w
Abstract: Luxeon altilon core
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Contextual Info: STF1N105K3, STFW1N105K3, STP1N105K3 N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3 Power MOSFET in TO-220FP, TO-3PF and TO-220 packages Datasheet — production data Features Order codes TAB VDS RDS on max PTOT ID 1 3 STF1N105K3 STFW1N105K3 1050 V 1 11 Ω |
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STF1N105K3, STFW1N105K3, STP1N105K3 O-220FP, O-220 STF1N105K3 STFW1N105K3 O-220FP O-220 | |
L310CLCNBA
Abstract: L310NWC L310NWCNDA L310CLIGBA L310MWCNCA L310M K0038 L310XXCNXX Delta Electronics
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k 1377
Abstract: MA 1054
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D-82140 D-82133 IR-1045. IR-1045-GMP-20dB. 343-HV-1-73_ 05/Mar/2004 343-HV-1-73 k 1377 MA 1054 | |
relay mercury wetted
Abstract: 5v dil reed relay zenerdiode 5v
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DIL-16 relay mercury wetted 5v dil reed relay zenerdiode 5v | |
Contextual Info: SMART SM5640880UUXUGU Modular Technologies October 1, 1999 Revision History • October 1, 1999 Corrected item 9 on page 27. • January 4, 1999 Datasheet released. • October 16, 1998 Preliminary datasheet released. Corporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com |
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SM5640880UUXUGU |