TGA4516 Search Results
TGA4516 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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TGA4516 | TriQuint Semiconductor | Ka-Band 2W Power Amplifier | Original | 235.52KB | 9 | ||
TGA4516 | TriQuint Semiconductor | Ka-Band 2W Power Amplifier | Original | 156.17KB | 8 | ||
TGA4516-EPU | TriQuint Semiconductor | Ka-Band 2W Power Amplifier | Original | 154.87KB | 8 |
TGA4516 Price and Stock
TGA4516 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions: |
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TGA4516-TS 20dBm TGA4516 TGA45cal 0007-inch TGA4516-TS | |
Contextual Info: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions: |
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TGA4516-TS 20dBm 1050mA TGA4516 0007-inch | |
TGA4516
Abstract: ids 2560
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TGA4516 20dBm TGA4516 1050mA ids 2560 | |
Contextual Info: Not Recommended for New Designs Advance Product Information July 23, 2007 TriQuint Recommends the TGA4516 be used for New Designs 33-36 GHz 2W Power Amplifier TGA1141-EPU Key Features • • • • • 0.25 um pHEMT Technology 17 dB Nominal Gain 31 dBm Pout @ P1dB, |
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TGA4516 TGA1141-EPU 33dBm 34dBm 0007-inch | |
Contextual Info: Advance Product Information February 10, 2006 Ka-Band 2W Power Amplifier TGA4516 Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology |
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TGA4516 20dBm TGA4516 | |
tga4516Contextual Info: TGA4516 Ka Band 2W Power Amplifier Key Features • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI pHEMT Technology Chip Dimensions: 2.79 x 2.315 x 0.1 mm (0.110 x 0.091 x 0.004) in |
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TGA4516 20dBm | |
Contextual Info: Not Recommended for New Designs Product Data Sheet August 5, 2008 TriQuint Recommends the TGA4516 be used for New Designs 33-36 GHz 2W Power Amplifier TGA1141 Key Features • • • • • 0.25 um pHEMT Technology 17 dB Nominal Gain 31 dBm Pout @ P1dB, |
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TGA4516 TGA1141 33dBm 34dBm 0007-inch | |
ka band gaas fet Package
Abstract: TGA4516 ka-band amplifier AMC8515
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TGA4516-TS 20dBm TGA4516 1050mA ka band gaas fet Package ka-band amplifier AMC8515 | |
100C
Abstract: TGA1141 TGA4516 ka band power mmic
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TGA4516 TGA1141 33dBm 34dBm 0007-inch 100C TGA1141 ka band power mmic | |
TGA4516Contextual Info: Advance Product Information December 2, 2004 Ka-Band 2W Power Amplifier TGA4516 Key Features • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology |
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TGA4516 20dBm 1050mA TGA4516 | |
TGA2517
Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
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cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125 | |
TGA2519-SG
Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
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AsareavailableforkeybandsacrossDCto100GHz Alldevicesare100% 11GHzCut-OffFreq TGC1430F-EPU TGC1430G-EPU TGC4401-EPU TriQuintSemiconductor5/06 S11/S22 DC-20 DC-18 TGA2519-SG HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519 | |
TGA2517
Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
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TG2H214220-FL
Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
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