MA 25L32 Search Results

2532 eprom

Abstract: 25l32 eprom 2532 MA 25L32 tms 2532 jl 2532 2532 eprom texas TMS2532 2532 rom TMS4732
Contextual Info: MOS LSI TMS 2532-30 JL, TMS 2532-35 JL, TMS 2532-45 JL. TMS 25L32-45 JL 32,768-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES • Organization . . . 4 0 9 6 X 8 • Single + 5 V Power Supply • Pin Compatible with Existing R O M s and E P R O M s 8K, 16K, 32K, and 64K

Contextual Info: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

Contextual Info: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

Contextual Info: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

P4C1026

Abstract: P4C1258
Contextual Info: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

Contextual Info: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)

Contextual Info: P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible Inputs and Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Produced with PACE II TechnologyTM

Contextual Info: P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible Inputs and Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Produced with PACE II TechnologyTM

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)

25L40

Contextual Info: FT6116/FT6116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible Inputs and Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Produced with CMOS Technology

25L40

Abstract: P4C116 P4C116L
Contextual Info: P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible Inputs and Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Produced with PACE II TechnologyTM

SMD code l32

Abstract: smd transistor l32 smd code WZ SMD L32 SMD l32 Transistor P4C1256
Contextual Info: P4C1256 P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP and SOJ —28-Pin 600 mil Ceramic DIP —28-Pin LCC 350 mil x 550 mil

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

Contextual Info: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM A - FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High Speed Equal Access and Cycle Times — 12/15/20/25/35 ns (Commercial) — 15/20/25/35/45 ns (Industrial) — 20/25/35/45/55/70 ns (Military)

Contextual Info: P4C164 REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM115 P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B Jun-06 JDB Added 28-pin ceramic DIP C Aug-06 JDB Added Lead Free Designation

100DM

Abstract: 1519B P4C164 P4C164L
Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

Contextual Info: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)

Contextual Info: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK —28-Pin SOP —28-Pin LCC 350 mil x 550 mil

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

Contextual Info: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM * FEATURES • ■ ■ ■ ■ ■ Three-State Outputs ■ Fully TTL Compatible Inputs and Outputs ■ Advanced CMOS Technology High Speed Equal Access and Cycle Times — 12/15/20/25/35 ns (Commercial) — 15/20/25/35/45 ns (Industrial)

Contextual Info: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK

Contextual Info: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK

Memory

Abstract: FT6264(L)
Contextual Info: FT6264 L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)