MA01801 Search Results

mmic core chip

Contextual Info: GaAs PIN MMIC SPDT Switch 2-18 GHz AP218R2-00 Features Bias 1 • w Loss, < 2.0 dB ■ High Isolation, > 50 dB ■ Good Return Loss, < - 9 dB ■ Broad Bandwidth, 2 -1 8 G H z ■ Fast Switching, < 2 ns ■ Low Power Consumption, < 75 mA Total at - 5 V ■

rf attenuator soic

Abstract: DC bias of FET 2 watt fet DC bias of gaas FET GHz Power FET
Contextual Info: Section 1 RF GaAs MMIC Products in Plastic Packages Table of Contents GaAs MMIC Control FET in SOT 143 DC-2.5 GHz . 1-4 GaAs MMIC Control FET Series in SOT 23 DC-2.5 GHz .

Contextual Info: GaAs 35 dB MMIC FET Voltage Variable Single Positive Control Attenuator 0.4-2.5 GHz jßHAIpht AT002S3-12 Features • 35 dB Range ■ SOIC 8 Package ■ Single Positive DC Bias Control ■ Low Insertion Loss < 1.7 dB @ 900 MHz ■ Low Cost ■ Requires Single Fixed Positive 5 Volt Bias

Contextual Info: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C

Contextual Info: GaAs MMIC SPDT FET Switch EBAlph Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 GHz ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation ProductVTemp. Stability ■

Contextual Info: GaAs SPDT FET MMIC 4 Watt TR Switch ESAlph in 8 Lead SOIC Package DC-2.5 GHz AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -1 0 V Bias

Contextual Info: GaAs MMIC Two Watt High Linearity EH Alpha Cellular SPDT Switch in SS0P8 Package AS358-62 Features • High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10 V Control Voltages

Contextual Info: GaAs MMIC SPDT FET Switch Non-Reflective DC-6 GHz • EBAlph . . . . - . * »■ ■ ■ ■V.s-l AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 Features ■ Broadband DC-6 GHz ■ Non-Reflective ■ Low DC Power Consumption ■ Excellent Intermodulation ProductsYTemp. Stability

step recovery diode application

Abstract: CVB1045-12 step recovery diodes
Contextual Info: ESAlpha Multiplier Diodes CVB1015, CVB1030 and CVB1116 Series Features Silicon Step Recovery Diodes Order-Narrow Band Multiplication for High Silicon A-Mode Multiplier Diodes for High Power-Low Order Multiplier Capability to Supply GaAs Varactor Multiplier

AF002C1-32

Contextual Info: GaAs MMIC Control FET in SOT 143 DC-2.5 GHz EBAIpfia AF002C1-32 Features m • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description The AF002C1-32 consists of a single GaAs switching

PT 8830

Contextual Info: Ka-Band Power GaAs MESFET AFM04P2-00 Features Chip Layout • 21 dBm Output Power at 18 G H z ■ High Associated Gain, 9 dB at 18 G H z ■ High Power Added Efficiency, 25% ■ Broadband Operation, D C -4 0 G H z ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface

Contextual Info: GaAs MMIC FET Transfer Switch DC-4 GHz AD004T2-00, AD004T2-11 Features • Broad Bandwidth ■ Low DC Power Dissipation < 20 uA ■ Low Differential Phase Between Paths ■ Meets M IL -S T D -883 Screening Requirements ■ Chip Size 30 x 39 x 8 Mils AD004T2-11

AFM02N5-55

Abstract: AD004T2-00 AD004T2-11 AFM02N5-56 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 S443 92260
Contextual Info: Low Noise Packaged GaAs MESFET Alph AFM02N5-55, AFM02N5-56 Drain Features Source • Low Noise Figure, 1.1 dB at 12 GHz ■ High Associated Gain, 8.0 dB at 12 GHz ■ High MAG, > 8.5 dB at 12 GHz ■ 0.25 ,um Ti/Pt/Au Gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package

AFP02N2-55

Abstract: AFP02N2 pt 8799 AFP02N2-56 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01
Contextual Info: EfiAlph Low Noise Packaged PHEMT AFP02N2-55, AFP02N2-56 Drain Features • Low Noise Figure, 0.75 dB at 12 GHz ■ High Associated Gain, 9.5 dB at 12 GHz ■ High MAG, > 10.0 dB at 12 GHz ■ 0.25 urn Ti/Pt/Au gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package

ASC02R2-12

Contextual Info: GaAs MMIC FET SPDT Switch in 8 Lead SOIC Package DC-2.5 GHz — ^ ^ ^ — •— S A lpha ^ i »»»aBaii m » ASC02R2-12 Features ■ Low Cost Application ■ Low Power PCN Phone TR Switch ■ Low Distortion at 50 mW ■ Reflective Short Description The ASC02R2-12 is a low cost MMIC SPDT

varactor diode q factor measurement

Abstract: x band varactor diode varactor diode AM varactor diode capacitance measurement CVG7864-01 varactor diodes application varactor diode capacitance range "Varactor Diodes" CVG9800
Contextual Info: EBAIpha GaAs Hyperabrupt Varactor Diodes CVG7864, CVG9800 Series Features • Constant Gamma of 1.0 and 1.25 ■ Highly Linear Frequency Tuning ■ Constant Modulation Sensitivity ■ Lower Series Resistance and Higher Q in Comparison to Equivalent Silicon Hyperabrupt

varactor diode notes

Abstract: Varactor Diodes 150-807 varactor diodes application Capacitance Varactor Diode "Varactor Diodes"
Contextual Info: GaAs Abrupt Varactor Diodes ESAlpha CVE7800 Series Features • Low Series Resistance - High Q ■ Low Capacitance Values for Applications at Millimeter Wave Frequencies ■ Available in Ceramic Packages Parasitics and Also in Die Form with Low Maximum Ratings

handling of beam lead diodes

Abstract: beam lead PIN diode ALPHA INDUSTRIES DSM6355 DSM63XX Alpha Industries pin diodes
Contextual Info: Planar and Mesa Beam Lead PIN Diodes EIB AIpfia DSG64XX, DSM63XX Series Features Low Capacitance Low Resistance Fast Switching Oxide-Nitride Passivated Maximum Ratings Stronger, Full Frame Design High Voltage Operating Temperature: -65 to + 150 °C Storage Temperature:

Contextual Info: GaAs MMIC SPST FET Switch Low Loss EHAlpha With Integral Driver Reflective DC-6 GHz AK006L1—01, AK006L1—10, AK004L1-11 Features • Integral Driver +5V, - 5 V Bias Voltages C M O S & TTL Compatible ■ Low D.C. Power C onsum ption-20 mW ■ Low Insertion Loss

36dBmtyp

Abstract: SPDT SWITCH 6 GHZ 1 WATT AH002R2-12
Contextual Info: GaAs SPDT FET MMIC 4 Watt TR Switch in 8 Lead SOIC Package DC-2.5 GHz 0 A lpha AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -10V Bias

AS-101

Contextual Info: GaAs MMIC SPDT Switch ESAlpha in SOIC 8 Plastic Package AS101-12 Features • Extremely Low Cost ■ 3 Volt Operation ■ Low Power Consumption Description The AS101-12 is an SPDT switch with complementary voltage control. Its low voltage control function is ideal for 3 Volt applications which

d5151

Abstract: Alpha Industries pin diodes
Contextual Info: EEAlpha Glass Packaged PIN Switching Diodes DSB6484 Series, D5151 Features • Low Series Resistance ■ Hermetically Sealed ■ 0.1 to 1.2 pF Capacitance ■ Fast Switching Speeds ■ Available with T X Level Screening Cp = 0 .0 7 pF L = 1.1 nH Description

MPD1750-04

Contextual Info: Monolithic Multi-Throw Driver Chips EHlAlph MPD1750-04 Features • 4 ns V ideo Switching T im e ■ Low in Band Noise: - 5 0 dBm a t 1 G H z ■ T ru e Differential Inputs ■ C om patible with T TL , E C L , and C M O S to 5 .0 V ■ Internal R eferen ced for T T L , E C L

Contextual Info: ËQ^ipha GaAs PIN Diode CGA3767-10 Features Low Insertion Loss and High Isolation Performance Low Forward Resistance Maximum Ratings Excellent Capacitance vs. Voltage Characteristics Large Contact Surface for Ease of Bonding Reverse Voltage: 100 Volts Power Dissipation Ta = 25°C :