MA22F200G Search Results

MA22F20

Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA22F200G Silicon epitaxial planar type For high speed switching circuits • Package  Super high speed switching characteristic (trr = 8 ns typ.)  At the same time as lowering the wiring inductance and increasing the peak

Contextual Info: Ultrafast trr and low VF characteristics contribute to reduced loss. 200V,400V/1A Fast Recovery Diodes MA22F200G/MA24F41 „ Overview The MA22F20 and MA24F41 are fast recovery diodes that significantly reduce power loss during switching recovery due to a device design that minimizes the forward voltage VF .

MA22F200G

Abstract: MA22F200 MA22F20
Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA22F200G Silicon epitaxial planar type For high speed switching circuits • Package  Super high speed switching characteristic (trr = 8 ns typ.)  At the same time as lowering the wiring inductance and increasing the peak

MA22F200G

Abstract: MA22F20 MA22F200
Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA22F200G Silicon epitaxial planar type For high speed switching circuits • Package  Super high speed switching characteristic (trr = 8 ns typ.)  At the same time as lowering the wiring inductance and increasing the peak

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

MA3DF30

Abstract: MIP2F mip2fx MIP2KX PANASONIC SC107A IC 4026 internal structure MIP2K MA3DF46 ma3df46* ma3df30 MA2YD260G
Contextual Info: 2009 ver. 2 Diode Series %JPEF
4FSJFT Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and