MA2Q705 Search Results

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Contextual Info: Schottky Barrier Diodes SBD MA2Q705 (MA10705) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8° 4.4±0.3 • IF(AV) = 1.5 A rectification is possible • Low forward voltage: VF < 0.37 V (at IF = 1 A)

MA2Q705

Contextual Info: Schottky Barrier Diodes SBD MA2Q705 Silicon epitaxial planar type Unit : mm For high-frequency rectification 4.4 ± 0.3 • New Mini-power type package (2-pin) • Allowing to rectify under (IF(AV) = 1.5 A) condition • Low VF (forward voltage) type: VF < 0.37 V (at IF = 1.0 A)

MA2Q705

Abstract: MA10705
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q705 (MA10705) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ M Di ain sc te on na tin nc ue e/ d 4.4±0.3

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q705 (MA10705) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ 4.4±0.3 • Forward current (Average) IF(AV) = 1.5 A rectification is possible

MA10705

Abstract: MA2Q705
Contextual Info: Schottky Barrier Diodes SBD MA2Q705 (MA10705) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ 4.4±0.3 • Forward current (Average) IF(AV) = 1.5 A rectification is possible • Low forward voltage: VF < 0.37 V

MA10705

Abstract: MA2Q705
Contextual Info: Schottky Barrier Diodes SBD MA2Q705 (MA10705) Silicon epitaxial planar type Unit : mm For high-frequency rectification 4.4 ± 0.3 • New Mini-power type package (2-pin) • Allowing to rectify under (IF(AV) = 1.5 A) condition • Low VF (forward voltage) type: VF < 0.37 V (at IF = 1.0 A)

MA10705

Abstract: MA2Q705
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q705 (MA10705) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 M Di ain sc te on na tin nc ue e/ d 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ ue

MA10705

Abstract: MA2Q705
Contextual Info: Schottky Barrier Diodes SBD MA2Q705 (MA10705) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8° 4.4±0.3 • IF(AV) = 1.5 A rectification is possible • Low forward voltage: VF < 0.37 V (at IF = 1 A)

Contextual Info: MA2Q705 Silicon epitaxial planar type For high-frequency rectification Unit : mm 4.4 ± 0.3 2 2.15 ± 0.3 + 0.1 Symbol Rating Unit VR 30 V Repetitive peak reverse voltage VRRM 30 V Average forward current IF AV 1.5 A Non-repetitive peak forward surge current*

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Q705 (MA10705) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8˚ 4.4±0.3 M Di ain sc te on na tin nc ue e/

"Charge Management Controller"

Abstract: nec 2401 MCP73827 NDS8434 G42-88 IRF7404 MA2Q705 M3328 IRF74 D 4206 TRANSISTOR
Contextual Info: M MCP73827 Single Cell Lithium-Ion Charge Management Controller with Mode Indicator and Charge Current Monitor Features Description • Linear Charge Management Controller for Single Lithium-Ion Cells • High Accuracy Preset Voltage Regulation: + 1% max

transistor 2 SC 4242

Abstract: package marking 18w 26 sot23 nec 2401 MCP73826 IRF7404 MCP73826-4.2VCHTR MA2Q705 NDS8434 MARKING TR SOT23-6 P MOSFET sot-23 marking code 18w 26
Contextual Info: M MCP73826 Single Cell Lithium-Ion Charge Management Controller Features Description • Linear Charge Management Controller for Single Lithium-Ion Cells • High Accuracy Preset Voltage Regulation: +1% max • Two Preset Voltage Regulation Options: - 4.1V - MCP73826-4.1

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

S-Mini

Abstract: SSMini s-mini 2-pin package
Contextual Info: New Low VF Schottky Barrier Diode Series ! Overview Low VF Schottky Barrier Diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type packages, these diodes

Contextual Info: New Mid-Power Low VF Schottky Barrier Diode „ Overview Panasonic Schottky Barrier Diode series are ideal for use in the power sopplies of computers and portable equipment. With package configurations that range from Mini Type:2-pin to New Mini Power Type:2-pin packages, these diodes

mosfet 4202

Abstract: k 4202 mosfet k 3525 G42-88 IRF7404 MA2Q705 MCP73827 NDS8434 4205 mosfet
Contextual Info: MCP73827 带充电模式指示和充电电流监视器 的单节锂离子电池充电管理控制器 特点 介绍 • 单节锂离子电池线性充电管理控制器 • 高精度预置电压稳定度：+ 1% （最大值） • 两种预置电压稳压选项：

marking j5a

Abstract: ADS1244 ADS1245 REF1004 SN74LVC1G80 j6a analog devices
Contextual Info: ADS1244EVM ADS1245EVM Evaluation Module User’s Guide June 2003 SBAU087 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

JC51

Contextual Info: MCP73841/2/3/4 Advanced Single or Dual Cell Lithium-Ion/ Lithium-Polymer Charge Management Controllers Features Description • Linear Charge Management Controllers • High-Accuracy Preset Voltage Regulation: - + 0.5% max • Four Preset Voltage Regulation Options:

Contextual Info: New Mid-Power Low VF Schottky Barrier Diode „ Overview Panasonic Schottky Barrier Diodes series are ideal for power source of computers and portable equipments. Low VF design 15 to 35% lower than our conventional products reduces power consumption and enhances equipment efficiency.

NDS8434

Abstract: CD10 G42-88 IRF7404 MA2Q705 MCP73828 diode 3982
Contextual Info: M MCP73828 Single Cell Lithium-Ion Charge Management Controller with Charge Complete Indicator and Temperature Monitor Features Description • Linear Charge Management Controller for Single Lithium-Ion Cells • High Accuracy Preset Voltage Regulation: +1% max

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

Contextual Info: MCP73841/2/3/4 Advanced Single or Dual Cell Lithium-Ion/ Lithium-Polymer Charge Management Controllers Features Description • Linear Charge Management Controllers • High-Accuracy Preset Voltage Regulation: - + 0.5% max • Four Preset Voltage Regulation Options:

Contextual Info: M MCP73826 Single Cell Lithium-Ion Charge Management Controller Features Description • Linear Charge Management Controller for Single Lithium-Ion Cells • High Accuracy Preset Voltage Regulation: +1% max • Two Preset Voltage Regulation Options: - 4.1V - MCP73826-4.1

Prime 15002

Abstract: MCP73844 MCP73842-8 MCP7384X MCP73841 MCP73842 MCP73843 MSOP-10 DS21823 MARKING CODE 8392
Contextual Info: M MCP73841/2/3/4 Advanced Single or Dual Cell Lithium-Ion/ Lithium-Polymer Charge Management Controllers Features Description • Linear Charge Management Controllers • High-Accuracy Preset Voltage Regulation: - + 0.5% max • Four Preset Voltage Regulation Options: