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    MA3DF30

    Abstract: No abstract text available
    Text: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF30 Silicon Mesa type For high frequency rectification For plasma display panel drive • Package  Features  High switching speed trr  Soft recovery  Absolute Maximum Ratings Ta = 25°C


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    PDF 2002/95/EC) MA3DF30 O-220D-A1 MA3DF30

    MA3DF30

    Abstract: MA3DF40 MA3df3 Switching Characteristics of Fast Recovery Diodes
    Text: Ultrafast trr characteristics 15 ns, typical Newly-Developed 300V/400V Fast Recovery Diodes „ Overview The MA3DF30 and MA3DF40 are fast recovery diodes that achieve the ultrafast trr characteristic of 15 ns (typical) by the use of an ultrafast process and a new structural design. These devices hold the


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    PDF 00V/400V MA3DF30 MA3DF40 O-220D M00737AE M00737BE MA3df3 Switching Characteristics of Fast Recovery Diodes

    MA3DF30

    Abstract: No abstract text available
    Text: Ultrafast trr characteristics 15 ns, typical Newly-Developed 300V/400V Fast Recovery Diodes „ Overview The MA3DF30 and MA3DF40 are fast recovery diodes that achieve the ultrafast trr characteristic of 15 ns (typical) by the use of an ultrafast process and a new structural design. These devices hold the


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    PDF 00V/400V MA3DF30 MA3DF40 O-220D MA3DF30ã MA3DF40ã O-220D-A1 MA3DF30 MA3DF40 M00737CE

    ma3df30

    Abstract: MA3Df3
    Text: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF30 Silicon Mesa type For high frequency rectification For plasma display panel drive • Package  Features  Code TO-220D-A1  Pin Name 1: Anode 2: Cathode 3: Anode


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    PDF 2002/95/EC) MA3DF30 O-220D-A1 ma3df30 MA3Df3

    MA3DF30

    Abstract: No abstract text available
    Text: Ultrafast trr characteristics 15 ns, typical Newly-Developed 300V/400V Fast Recovery Diodes „ Overview The MA3DF30 and MA3DF40 are fast recovery diodes that achieve the ultrafast trr characteristic of 15 ns (typical) by the use of an ultrafast process and a new structural design. These


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    PDF 00V/400V MA3DF30 MA3DF40 O-220D MA3DF30 MA3DF40 M00737AE

    MA3DF30

    Abstract: MA3df3 MA3df
    Text: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF30 Silicon Mesa type For high frequency rectification For plasma display panel drive • Package  Code TO-220D-A1  Pin Name 1: Anode 2: Cathode 3: Anode M Di ain


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    PDF 2002/95/EC) MA3DF30 O-220D-A1 MA3DF30 MA3df3 MA3df

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    k11 zener diode

    Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
    Text: Diodes Switching Diodes. K2 Switching Diodes . K2


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    PDF MA24D56 MA24D58 MA24D70 MA24D74 MA3D749 MA3D749A MA3D750 MA3D750A MA3D752 MA3D752A k11 zener diode zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291

    MA3DF30

    Abstract: MIP2F mip2fx MIP2KX PANASONIC SC107A IC 4026 internal structure MIP2K MA3DF46 ma3df46* ma3df30 MA2YD260G
    Text: 2009 ver. 2 Diode Series %JPEF4FSJFT Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF