MA4SW Search Results

MA4SW100

Abstract: 9620* diode MA4SW100-300
Contextual Info: Monolithic PIN Diode Switches MA4SW100, 200, 300 V3.00 Features ● ● ● ● Broadband Performance: Specified 1-18 GHz Usable 1-26 GHz SPST, SPDT Usable 1-20 GHz (SP3T) Insertion Loss 1.2 dB to 18 GHz Isolation 40 dB to 18 GHz Single Chip Replaces up to

MA4SW510

Abstract: PIN Diode Switch for frequencies up to 10 GHz
Contextual Info: MA4SW510 SP5T PIN Diode Reflective Switch MA4SW510 Layout Features n n n V 1.00 Ultra Broad Bandwidth: 50 MHz to 26 GHz 1.0 dB Insertion Loss, 30 dB Isolation at 20 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction Description The MA4SW510 is a SP5T Series-Shunt broad band switch

MADR-007097-000100

Abstract: MADR-009190-000100
Contextual Info: MA4SW510 HMIC Silicon SP5T PIN Diode Switch RoHS Compliant V5 Features ♦ Broad Bandwidth ♦ Specified from 50 MHz to 20 GHz ♦ Usable from 50 MHz to 26.5 GHz ♦ Lower Insertion Loss and Higher Isolation than Comparable pHEMT/ Discrete Component Designs

Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant Rev. V7 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs

Contextual Info: MA4SW210B-1 MA4SW310B-1 HMIC Silicon PIN Diode Switches with Integrated Bias Network MA4SW210B-1 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 RoHS Compliant Broad Bandwidth Specified 2 to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation

Contextual Info: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant V6 Features ♦ Broad Bandwidth ♦ Specified from 50 MHz to 20 GHz ♦ Usable from 50 MHz to 26.5 GHz ♦ Lower Insertion Loss and Higher Isolation than Comparable pHEMT or Discrete Component Designs

MASW110

Abstract: MA4 diode MA4SW210 MA4SW310 W110 ARM v7 MA4SW110
Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant Rev. V7 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs

MA4SW510B-1

Contextual Info: MA4SW510B-1 HMIC Silicon PIN Diode Switch with Integrated Bias Network RoHS Compliant M/A-COM Products V2 Features ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified up to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation

MA4SW510

Abstract: AN8020
Contextual Info: MA4SW510 HMIC Silicon SP5T PIN Diode Switch RoHS Compliant Rev. V4 Features ♦ ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 1dB Insertion Loss , 30dB Isolation at 20GHz 50nS Switching Speed Fully Monolithic, Glass Encapsulated Chip with Polymer

Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant V8 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHEMT/Discrete Component Designs

ACOM sot

Abstract: MA4SW201 Scans-00141344 MA4SW101 MA4SW301
Contextual Info: an A M P company Surface Mount Monolithic PIN Diode Switches MA4SW101, 201, and 301 V 2.00 SO-8 Features • • • • • • Low Cost/High Volume Broadband Performance 50 MHz - 4 GHz Low Insertion Loss High Isolation Lowr Distortion Available in Tape & Reel

Contextual Info: MA4SW424B-1 SP4T 24GHz PIN Diode Switch with Integrated Bias Network Rev. V1 Features ♦ Frequency of Operation: 24 +/- 2 GHz ♦ Fully Integrated Bias Network ♦ Low Power Consumption +12mA for Insertion Loss, 0V for Isolation ♦ The Device is Wire Bond Compensated at all RF

Contextual Info: MA4SW610B-1 SP6T PIN Diode Switch with Integrated Bias Network 2 - 18GHz Rev. V2 Features MA4SW610B-1 Layout • Ultra Broad Bandwidth: 2GHz to 18GHz • 1.9dB Insertion Loss, 35dB Isolation at 18GHz • Reliable. Fully Monolithic, Glass Encapsulated Construction

00709

Abstract: MA4SW210 MADR-007097-000100 MA4SW110 MADR-009190-000
Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant V8 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHEMT/Discrete Component Designs

MA4SW101-287T

Abstract: mmic case styles V3 SOT-23
Contextual Info: MA4SW101-287T Surface Mount Monolithic PIN Diode Switches 50 MHz - 4 GHz Features • • • • • Rev. V3 Product Image Low Cost/High Volume Broadband Performance 50 MHz - 4 GHz Low Insertion Loss/ High Isolation Low Distortion Available in Tape & Reel

sp4t switch die

Abstract: MA4SW424B-1
Contextual Info: MA4SW424B-1 SP4T 24GHz PIN Diode Switch with Integrated Bias Network Rev. V1 Features ♦ Frequency of Operation: 24 +/- 2 GHz ♦ Fully Integrated Bias Network ♦ Low Power Consumption +12mA for Insertion Loss, 0V for Isolation ♦ The Device is Wire Bond Compensated at all RF

sp4t switch die

Contextual Info: MA4SW410B-1 HMIC Silicon PIN Diode Switch with Integrated Bias Network RoHS Compliant M/A-COM Products V3 Features ♦ ♦ ♦ ♦ ♦ ♦ Broad Bandwidth Specified up to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation

Contextual Info: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant Rev. 3 Features ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Fully Monolithic, Glass Encapsulated Chip with Polymer Protective Coating

Contextual Info: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant M/A-COM Products Rev. V6 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs

PIN diode switch

Abstract: SN62 PB36 ag2 solder preform SN62 PB36 ag2 MA4SW510B-1 MA4SW610B-1
Contextual Info: MA4SW610B-1 SP6T PIN Diode Switch with Integrated Bias Network MA4SW510B-1 Layout Features n n n V 1.00 Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.9 dB Insertion Loss, 35 dB Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction Description

SN62 PB36 ag2 solder preform

Abstract: SN62 PB36 ag2 MA4SW510B-1
Contextual Info: MA4SW510B-1 SP5T PIN Diode Switch with Integrated Bias Network MA4SW510B-1 Layout Features n n n V 1.00 Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.8 dB Insertion Loss, 35 dB Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction Description

MA4SW210B-1

Abstract: MA4SW310B-1 210B1 SN62 PB36 ag2 solder preform 310b SN62 PB36 ag2 MA4SW 310B
Contextual Info: Monolithic Pin Diode Switches with Integrated Bias Network MA4SW210B-1, MA4SW310B-1 V3.00 Features Chip Layout • • • • • MA4SW210B-1 Broad Bandwith Specified up to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation

Contextual Info: MA4SW210B-1 MA4SW310B-1 HMIC Silicon PIN Diode Switches with Integrated Bias Network Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 MA4SW210B-1 Broad Bandwidth Specified 2 to 18 GHz Usable up to 26 GHz Integrated Bias Network Low Insertion Loss / High Isolation

MA4SW110

Contextual Info: MA4SW110, MA4SW210, MA4SW310 M/A-COM Monolithic PIN Diode Switches A IÂ C G M M R F & Microwave Products Features • • • Borad Bandwidth • Specified up to 20 GHz • Usable to 26.5 GHz Low Insertion Loss / High Isolation Rugged, Fully Monolithic, Glass Encapsulated