MA69 Search Results

MA695

Contextual Info: MA111 Fast Recovery Diodes FRD MA695 Silicon planer type (cathode common) Unit : mm For high-frequency rectification ● Cathode common dual type ● High reverse voltage VR ● Low forward voltage V F ● Fast reverse recovery time trr 21.0±0.5 15.0±0.2

MA690

Contextual Info: MA111 Fast Recovery Diodes FRD MA690 Silicon planer type Unit : mm 16.7±0.3 High reverse voltage VR 4.0 Fast reverse recovery time trr 14.0±0.5 ● 1.4±0.1 Solder Dip Low forward voltage V F ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo

MA694

Contextual Info: MA111 Fast Recovery Diodes FRD MA694 Silicon planer type (cathode common) Unit : mm 16.7±0.3 Cathode common dual type ● Fast reverse recovery time trr 4.0 Low forward voltage V F 14.0±0.5 ● 1.4±0.1 Solder Dip High reverse voltage VR ue pl d in an c

Contextual Info: Fast Recovery Diodes FRD MA3G695 (MA695) Silicon planar type (cathode common) Unit : mm φ 3.2 ± 0.1 2.0 ± 0.2 M Di ain sc te on na tin nc ue e/ d • Cathode common dual type • High reverse voltage VR • Low forward voltage VF • Fast reverse recovery time trr

Contextual Info: MA111 Fast Recovery Diodes FRD MA693 Silicon planer type (cathode common) ● High reverse voltage VR ● Low forward voltage V F 5.5±0.2 2.7±0.2 4.2±0.2 0.7±0.1 Cathode common dual type 4.2±0.2 10.0±0.2 ø3.1±0.1 4.0 Fast reverse recovery time trr

Contextual Info: MA111 Fast Recovery Diodes FRD MA694 Silicon planer type (cathode common) Unit : mm Cathode common dual type ● High reverse voltage VR ● Low forward voltage V F ● Fast reverse recovery time trr 5.5±0.2 4.2±0.2 2.7±0.2 ø3.1±0.1 4.0 14.0±0.5 1.4±0.1

MA3G695

Abstract: MA695
Contextual Info: Fast Recovery Diodes FRD MA3G695 (MA695) Silicon planar type (cathode common) Unit : mm 15.0 ± 0.3 11.0 ± 0.2 5.0 ± 0.2 3.2 21.0 ± 0.5 15.0 ± 0.2 • Cathode common dual type • High reverse voltage VR • Low forward voltage VF • Fast reverse recovery time trr

MA3G695

Abstract: MA695
Contextual Info: Fast Recovery Diodes FRD MA3G695 (MA695) Silicon planar type (cathode common) Unit : mm • Cathode common dual type • High reverse voltage VR • Low forward voltage VF • Fast reverse recovery time trr 5.0 ± 0.2 3.2 21.0 ± 0.5 15.0 ± 0.2 • Features

MA693

Abstract: TC-140
Contextual Info: MA111 Fast Recovery Diodes FRD MA693 Silicon planer type (cathode common) ø3.1±0.1 High reverse voltage VR ● Low forward voltage V F Fast reverse recovery time trr 14.0±0.5 ● 4.0 ● 1.4±0.1 Solder Dip Cathode common dual type 0.8±0.1 +0.2 0.5 -0.1

MA690

Contextual Info: MA111 Fast Recovery Diodes FRD MA690 Silicon planer type Unit : mm High reverse voltage VR ● Low forward voltage V F ● Fast reverse recovery time trr 2.7±0.2 ø3.1±0.1 4.0 14.0±0.5 1.4±0.1 Solder Dip M Di ain sc te on na tin nc ue e/ d 16.7±0.3

Contextual Info: Fast Recovery Diodes FRD MA3G695 (MA695) Silicon planar type (cathode common) Unit : mm 21.0 ± 0.5 15.0 ± 0.2 2.0 ± 0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Repetitive peak reverse voltage VRRM Non-repetitive peak reverse surge voltage

MA690

Contextual Info: MA111 Fast Recovery Diodes FRD MA690 Silicon planer type Unit : mm ● Low forward voltage V F ● Fast reverse recovery time trr 14.0±0.5 16.7±0.3 High reverse voltage VR 4.2±0.2 2.7±0.2 ø3.1±0.1 4.0 ● 5.5±0.2 1.4±0.1 Solder Dip • Features 4.2±0.2

f 422

Contextual Info: MA111 Fast Recovery Diodes FRD MA693 Silicon planer type (cathode common) High reverse voltage VR ● Low forward voltage V F Fast reverse recovery time trr 14.0±0.5 ● 2.7±0.2 4.2±0.2 0.7±0.1 ● 16.7±0.3 Cathode common dual type 5.5±0.2 ø3.1±0.1

Contextual Info: MA111 Fast Recovery Diodes FRD MA694 Silicon planer type (cathode common) Unit : mm High reverse voltage VR ● Low forward voltage V F ● Fast reverse recovery time trr 16.7±0.3 ● 4.2±0.2 2.7±0.2 ø3.1±0.1 4.0 Cathode common dual type 14.0±0.5 ●

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Mil-55681

Abstract: MA27 MA80 MA826 MB22-6 MA68
Contextual Info: APPLICATION SPECIFIC CAPACITORS HIGH FREQUENCY CERAMIC CAPACITORS MA/MB Series OUTSTANDING CHARACTERISTICS • Miniature size ■ Very high Q at high frequencies ■ High RF power capabilities ■ Impervious to environmental conditions ■ Low dissipation factors

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

J137 74

Abstract: PD55015-E DB-55015-490 GRM188R71H102K PD55015 rubycon capacitor date codes
Contextual Info: DB-55015-490 RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 420 - 490 MHz ■ Supply voltage: 13.2 V ■ Output power: 15 W ■ Power gain: 13.5 ± 0.7 dB

GRM42-6 COG 221 J

Abstract: PD85015-E DB-85015-940 grm42-6x7r PD85015 102J EEVHB1V100P EXCELDRC35C GRM42-6 GRM42-6 COG
Contextual Info: DB-85015-940 RF power amplifier using 1 x PD85015-E N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 860 - 940 MHz ■ Supply voltage: 13.6 V ■ Output power: 10 W ■ Power gain: 15.7 ± 0.4 dB ■ Efficiency: 60% - 62%

MA661

Contextual Info: • Schottky Barrier Diodes SBD (For Power) n Type No. Main Characteristics (Ta =25 "C) Vf Vr Ir tr* max.(V) typ.(ns) (mA) (V) Package No. ■ —' < r Category A A A ■ Fast Recovery Diodes (FRD) ■ .- ■ MA749/A 40/45 5 0.55 11 1 TO-220(F) D55

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

MXHP32HP

Abstract: MXHP32HP1000 LQM18FN2R2M00 1uF 250V 10 X7R SMD electrolytic BNX024H01 LQM18FN100M00 GRM1555C1HR50BA01 NCP18XH103J03RB GRM1555C1H390JA0 PRF18BA471QS5RB
Contextual Info: 2010 DESIGN ENGINEERING KITS CATALOG NO. G-06-G Please visit our website: www.murata.com DESIGN ENGINEERING KITS Murata offers a complete selection of Design Engineering Kits specifically intended to aid the design engineer in prototyping applications. Each kit

murata MA Series

Abstract: HPPC ma1033 MA20151JBN MA2039 MA10 MA20 MA69 ma1018 10n 500V capacitor
Contextual Info: A p p l i c at i o n S p e c i f i c Ca pa c i t o r s High Frequency Ceramic Capacitors MA Product Summary MA Series: The MA series highlights performance in a wide range of rated voltage from 50 to 500V. These high Q capacitors are ideal for applications in the