MA789 Search Results

RB100A

Abstract: RK36 MA711A RB110c HRW0503A KS826S04 MA701 MA701A MA711 MA719
Contextual Info: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL

RK36

Abstract: RB100A RB110c HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719
Contextual Info: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL

S3S4M

Abstract: NSQ03A02L S3S6M S1S6M RB100A RK14 RK36 RB031B-40 RB110c KS826S04
Contextual Info: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X789 (MA789) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

Contextual Info: Schottky Barrier Diodes SBD MA3X789 (MA789) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • IF(AV) = 500 mA rectification is possible • VR = 60 V is guaranteed

MA3X789

Abstract: MA789
Contextual Info: Schottky Barrier Diodes SBD MA3X789 (MA789) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 0.65 ± 0.15 1 3 + 0.1 • Allowing to rectify under (IF(AV) = 200 mA) condition • Reverse voltage VR (DC value) = 60 V guaranteed 1.9 ± 0.2

MA789

Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA789 Silicon epitaxial planer type Unit : mm +0.2 For super high-speed switching circuit For small current rectification 2.8 –0.3 +0.25 1.5 –0.05 ● Reverse voltage VR (DC value)= 60V guaranteed 1.45 0.95 3 +0.1

MA3X789

Abstract: MA789
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X789 (MA789) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

S3S4M

Abstract: NSQ03A04 RK36 RB100A RB110c HRW0503A KS826S04 MA701 MA701A MA711
Contextual Info: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL

MA3X789

Abstract: MA789
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X789 (MA789) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

RB100A

Abstract: RK36 MA701A MA711A RB110c HRW0503A KS826S04 MA701 MA711 MA719
Contextual Info: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL

MA3X789

Abstract: MA789
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X789 (MA789) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

Contextual Info: Schottky Barrier Diodes SBD MA3X789 (MA789) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • IF(AV) = 500 mA rectification is possible • VR = 60 V is guaranteed

Contextual Info: Schottky Barrier Diodes SBD MA3X789 (MA789) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) IF(AV) = 500 mA rectification is

MA3X789

Abstract: MA789
Contextual Info: Schottky Barrier Diodes SBD MA3X789 (MA789) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • IF(AV) = 500 mA rectification is possible • VR = 60 V is guaranteed

RK36

Abstract: RB100A RB110c HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719
Contextual Info: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL

RB100A

Abstract: RB110c RK36 MA711A HRW0503A KS826S04 MA701 MA701A MA711 MA719
Contextual Info: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL

RB100A

Abstract: MA701A RK36 S1S4M S3S4M S3S6M MA711A RB031B-40 RB110c HRW0503A
Contextual Info: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL

RK36

Abstract: MA701A RB100A RB110c HRW0503A KS826S04 MA701 MA711 MA711A MA719
Contextual Info: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MA7D52

Contextual Info: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)

MA720

Abstract: power supply nichicon NICHICON VZ 4,7uF 50v 3.3v dc-dc converter toshiba DC-DC converter 5V 1A NEC DC-DC converter CD54 RB081L dc-dc
Contextual Info: 991129 Application Note No.106 DC-DCコンバータ用 コンバータ用IC 概論 コンバータ用 １．スイッチング・レギュレータ概要 スイッチング・レギュレータとはコイルやトランスを使いスイッチにてエネルギー変換をし、安定化

Contextual Info: S-8330/8331 Series www.sii-ic.com STEP-UP, FOR LCD BIAS SUPPLY, 1-CHANNEL SWITCHING REGULATOR Rev.6.0_00 Seiko Instruments Inc., 1996-2010 The S-8330/8331 Series is a CMOS PWM-control step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, a power MOS FET for S-8330 Series , and an error amplifier.