MARK 641 Search Results

BY100

Abstract: mark US CS127
Contextual Info: CS127-1 + Electrodes B _ C Cathode Mark Dimensions in inches [mm] Give us a call at 888-641-SEMI 7364 A Square web: http://www.aeroflex.com/metelics, email: metelics-sales@aeroflex.com Symbol Dimension A Inches (mm) Dimension B Inches (mm) Dimension C Inches (mm)

pioneer mosfet

Abstract: AVNET Cross Reference MOSFET 818 ln avnet pioneer ic
Contextual Info: - " r r p c i A DISTRIBUTOR AND WORLDWIDE SALES OFFICES AUTHORIZED NORTH AMERICAN DISTRIBUTORS UNITED STATES: ALABAMA Huntsville Future E lectro n ics. 205 830-2322 Hall-Mark Electronics .(205)837-8700

Varistor 4D-22

Abstract: 6D-22 Varistor 103AT-11 varistor 5D-11 metal oxide varistor 4d-22 5d-11 power thermistor NTC 8D-11 varistor 5D-13 NTC 16D-13 MELF DIODE color band brown
Contextual Info: PRODUCT CATALOG CAT. No.129A SURGE ABSORBERS SENSORS AND MODULES THERMISTORS THERMISTOR 4 HIGH PRECISION SERIES SMD SERIES HIGH HEAT-RESISTANCE SERIES DISK SERIES SENSORS POWER THERMISTOR 20 POWER THERMISTOR SERIES MARK SERIES VRD TRANSIENT VOLTAGE SUPPRESSOR

BSS63

Contextual Info: BSS63 Discrete POW ER & Signal Technologies A National Semiconductor" BSS63 Mark: T3 PNP General Pupose Amplifier This device is designed for general purpose am plifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum RatinQS*

mark 641 sot

Abstract: mark 641 sot dc BSS63 sot23 mark code CB CB SOT-23
Contextual Info: BSS63 BSS63 C E SOT-23 B Mark: T3 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: HSL276A Silicon Schottky Barrier Diode for Detector REJ03G0528-0100 Rev.1.00 Feb 09, 2005 Features • High forward current, Low capacitance. • Extremely small Flat Lead Package EFP is suitable for surface mount design. Ordering Information Type No. Laser Mark

Contextual Info: BSS63 BSS63 C E SOT-23 B Mark: T3 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

HSL276A

Contextual Info: HSL276A Silicon Schottky Barrier Diode for Detector REJ03G0528-0100 Rev.1.00 Feb 09, 2005 Features • High forward current, Low capacitance. • Extremely small Flat Lead Package EFP is suitable for surface mount design. Ordering Information Type No. Laser Mark

NTC 10D-9

Abstract: smd zener diode color band Varistor 4D-22 ntc 5D-11 5d-11 power thermistor ntc 8D-13 varistor 5D-11 TRANSISTOR SMD MARKING CODE 1P NTC 16D-13 NTC 8D-11
Contextual Info: PRODUCT CATALOG CAT. No.129E SURGE ABSORBERS SENSORS AND MODULES THERMISTORS NON-CONTACT SENSOR 4 THERMOPILE NC SENSOR THERMISTOR 6 HIGH PRECISION SERIES SMD SERIES HIGH HEAT-RESISTANCE SERIES DISK SERIES SENSORS POWER THERMISTOR 21 D-TYPE SERIES MARK SERIES

Contextual Info: BSS63 BSS63 C E SOT-23 B Mark: T3 PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N5401 fairchild

Abstract: 2N5401 SOT-23
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*

2N5401 fairchild

Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 SOT-23 E B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*

C8413-60153 AX4

Abstract: IC 74502 OX2114A-HZ-1-24.576-3.3
Contextual Info: Elan Microelectronics Crop. EM65568 130COM/ 128SEG 4096 Color STN LCD Driver April 1, 2004 Version 0.9 Version 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 EM65568 Specification Revision History Content Initial version 1. Add Pad configuration 2. Add the shape of alignment mark

ZD015

Abstract: Z2018 Z1047
Contextual Info: Z1 type VRD has bipolar electrical characteristics. Maximum ratings Peak pulse power:250 W 10/1000␮s 3.00 kW(8/20␮s) Steady state power dissipation:500 mW Operating and storage temperature :Ϫ40ЊC to 125ЊC Symbol mark Epoxy resin 6Ϯ0.3 ␾3.6Ϯ0.3

2N5401 SOT-23

Abstract: mark 2L SOT-23 mark 641 mark 641 sot dc transistor 2N5401 2N5401 MMBT5401
Contextual Info: 2N5401 MMBT5401 C E C TO-92 BE SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N5401 SOT-23

Abstract: 2N5401 fairchild transistor 2N5401 2N5401 MMBT5401
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2n5401y

Abstract: 2N5401yc 2N5401 fairchild 2N5401-Y 2N5401C-Y mark 2L SOT-23 transistor 2L 5401 2N5401YBU 5401 GM
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

10084

Abstract: NX 9121 C8413-60153 AX4 PC111 bj pc150 EM65568 EM65568AF EM65568AGH EM65568BF LS5 MARK
Contextual Info: Elan Microelectronics Crop. EM65568 130COM/ 128SEG 4096 Color STN LCD Driver October 12, 2004 Version 1.2 Version 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 EM65568 Specification Revision History Content Initial version 1. Add Pad configuration 2. Add the shape of alignment mark

mark 2L SOT-23

Abstract: MARKING W2 SOT23 TRANSISTOR MARKING W3 SOT23 TRANSISTOR 2N5401B 2N5401BU 5401 SOT-23 2N5401 fairchild transistor marking code ne SOT-23 transistor 2N 5401 mark 2L SOT-23 6
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

mark 2L SOT-23

Abstract: 2N5401 SOT-23 2N5401 CBVK741B019 F63TNR MMBT5401 PN2222N 2n5401 transistor MJE 350 PNP power transistor
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N5401

Abstract: CBVK741B019 F63TNR MMBT5401 PN2222N 2N5401 SOT-23 mark 2L SOT-23 RB103
Contextual Info: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2148F

Abstract: transistor 2N5401 2N5401 MMBT5401 2N5401 SOT-23
Contextual Info: N 2N5401 MMBT5401 C E C TO-92 BE SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

alcatel 2440

Abstract: samsung 10K filing SEC SAMSUNG PLC SPC SERIES DMS-100 ericsson bts Technical specification ERICSSON BTS training NORTEL dms-mtx organizational structure samsung Mercator ericsson 882 cabinet
Contextual Info: UNITED STATES SECURITIES AND EXCHANGE COMMISSION Washington, D.C. 20549 FORM 10-K Mark One X Annual report pursuant to Section 13 or 15(d) of the Securities Exchange Act of 1934 For the fiscal year ended December 31, 1999 Transition report pursuant to Section 13 or 15(d) of

maxim 9694

Abstract: ULS-2803 ULS2803R-883 ULS-2823 darlington array 2804 LS 2822 ULS-2802 ULS-2804 ULS-2805 ULS-2812
Contextual Info: ULS-2801H/R THROUGH ULS-2825H/R <01SPRAGUE THE MARK OF RELIABILITY Integrated Circuits I SERIES ULS-2800H AND ULS-2800R HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS MIL-STD-883 Compliant S i FEATURES • • • • • • • TTL, DTL, PMOS, or CMOS Compatible Inputs