MARK N2 Search Results

E3M-VG21

Abstract: washing machine ladder diagram Wiring Diagram Great wall automatic water level controller circuit diagram remote fire sensor E3M-VG16 omron E3E2 E39-L132 Wiring Diagram remote Great wall E3M-VG26
Contextual Info: Color Mark Sensor E3M-V Great for Irregularities and Lamination, an Easy-to-use Mark Sensor Be sure to read Safety Precautions on page 5. Ordering Information Sensors Green Appearance Connection method Sensing distance Spot diameter Model NPN output PNP output

E3M-VG11

Abstract: washing machine ladder diagram E39-L132 E3M-VG26 E3MVG11 E3M-VG16 E3M-VG21 omron E3E2 remote fire sensor XS2F-D421-D80-A
Contextual Info: Color Mark Sensor E3M-V Great for Irregularities and Lamination, an Easy-to-use Mark Sensor Be sure to read Safety Precautions on page 5. Ordering Information Sensors Green Appearance Connection method Sensing distance Spot diameter Model NPN output PNP output

diodes 422

Contextual Info: HVU307-Variable Capacitance Diode for VHF Tuner Features Outline • High capacitance ratio, n =12.0min • Low series resistance. (rs=0.85Qmax) • ¡Jltra small R e s in Package (URP) is suitable for surface mount design. Cathode mark Mark 1Œ ill

Contextual Info: ! ADE-208-372 Z HVU367 Variable Capacitance Diode for VCO HITACHI Features Rev. 0 Jun. 1995 Outline • Low series resistance. (rs=0.4Q max) • Ultra small Eesin Package (URP) is suitable for surface mount design. Cathode mark Mark 77Î7: Ordering Information

E3M-VG12

Abstract: E3M-VG17 E3M-VG27 Y96E-43SD2 E3M-VG26 E39-L132 E3M-VG21 E3MVG12 E3M-VG16 E3M-VG11
Contextual Info: R Color Mark Sensor with Teach Function E3M-V High-speed Registration Mark Detection H Fast 50 µs response H Pushbutton programming for quick setup H Remote control setup for on-the-fly adjustments H Green LED detects yellow-on-white and other difficult color combinations

Contextual Info: R Color Mark Sensor with Teach Function E3M-V High-speed Registration Mark Detection H Fast 50 µs response H Pushbutton programming for quick setup H Remote control setup for on-the-fly adjustments H Green LED detects yellow-on-white and other difficult color combinations

OXONIA ACTIVE 150

Abstract: ecolab topax 12 topax 56 E3ZM-V81 E3ZM-V86 topax* ecolab oxonia active topax SUS316L E3ZM-V61
Contextual Info: Mark Sensor with Stainless Steel Housing Compact, Photoelectric Sensor with Built-in Amplifier and Teaching Function E3ZM-V Color Mark Detection in a World-standard Size 11 x 21 × 32 mm , with High-speed Response (50 µs) and Accuracy in Spite of Sensing Object Movement

KRC416E

Abstract: marking n2
Contextual Info: SEMICONDUCTOR KRC416E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking N2 No. Item Marking 1 Device Mark N2 KRC416E 2 hFE Grade - - 00.09.01 Revision No : 00 Description 1/1

UCD9240 Compensation Cookbook

Abstract: SLUA497 GCLA a11z ic SLUA481 A11Z UCD9240 COOKBOOK feedback controlled system
Contextual Info: Application Report SLUA497 – February 2009 UCD9240 Compensation Cookbook Mark Hagen . Digital Power Group ABSTRACT This application note steps through the process of configuring the compensation portion

Contextual Info: I I I DWG. NO. SD-35716-001 8_ _ Z_ _é_ _5_ I_ Í _ I_ 3_ I_ 2_ I_ 1 MK2ITRADE MARK NOTES 1. MATERIAL & PLATING: SEE CHART

ON2170

Abstract: high sensitivity reflective phototransistor
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2170 Reflective Photosensor • Outline Unit : mm Mark for indicating anode side C0.5 O N2170 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated

HP 4194A calibration

Abstract: SG 9B sg 3425 909d HP 4194A 4275a
Contextual Info: TECHNICAL INFORMATION RELIABILITY AND CHARACTERIZATION OF MLC DECOUPLING CAPACITORS WITH C4 INTERCONNECTIONS Donald Scheider, Donald Hopkins, Paul Zucco, Edward Moszczynski, Michael Griffin, Mark Takacs IBM Microelectronics Division Hudson Valley Research Park

HP 4194A calibration

Abstract: 3,2nf capacitor 10107-B
Contextual Info: TECHNICAL INFORMATION RELIABILITY AND CHARACTERIZATION OF MLC DECOUPLING CAPACITORS WITH C4 INTERCONNECTIONS Donald Scheider, Donald Hopkins, Paul Zucco, Edward Moszczynski, Michael Griffin, Mark Takacs IBM Microelectronics Division Hudson Valley Research Park

sot-23 Marking N2

Abstract: MARKING N2 KRC116S
Contextual Info: SEMICONDUCTOR KRC116S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking N2 No. 1 Item Marking Device Mark N2 KRC116S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

pn200

Abstract: PR68 MMBT200 MMBT200A PN200A
Contextual Info: PN200 PN200A MMBT200 MMBT200A C E C B TO-92 SOT-23 E B Mark: N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol

PN200

Abstract: PN200A CBVK741B019 F63TNR MMBT200 MMBT200A PN2222N MARK N2 SOT-23
Contextual Info: PN200 / MMBT200 / PN200A / MMBT200A PN200 PN200A MMBT200 MMBT200A C E C B TO-92 SOT-23 E B Mark: N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.

PN200

Contextual Info: PN200 / MMBT200 / PN200A / MMBT200A PN200 PN200A MMBT200 MMBT200A C E C B TO-92 SOT-23 E B Mark: N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.

SOT23 MARK Y3

Abstract: sot-23 Marking N2 MMBT200 10bv MARK N2 SOT-23 PN200
Contextual Info: PN200 / MMBT200 / PN200A / MMBT200A PN200 PN200A MMBT200 MMBT200A C E C B TO-92 SOT-23 E B Mark: N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.

pn200

Abstract: MMBT200 MMBT200A PN200A
Contextual Info: PN200 PN200A MMBT200 MMBT200A C E C B TO-92 SOT-23 E B Mark: N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol

KRC416

Abstract: 1N21
Contextual Info: SEMICONDUCTOR KRC416 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 N2 1 2 Item Marking Description Device Mark N2 KRC416 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

ts3020

Abstract: PN200
Contextual Info: PN200 / MMBT200 / PN200A / MMBT200A PN200 PN200A MMBT200 MMBT200A C E C B TO-92 SOT-23 E Mark: N2 / N2A B PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.

CBVK741B019

Abstract: F63TNR MMBT200 MMBT200A PN200 PN200A PN2222N
Contextual Info: PN200 / MMBT200 / PN200A / MMBT200A PN200 PN200A MMBT200 MMBT200A C E C B TO-92 SOT-23 E B Mark: N2 / N2A PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.

Contextual Info: I I I DWG. NO. SD-35716-001 8_ _ Z_ _ é_ _ 5_I_ Í _ I_ 3_ I_2_ I_ 1 MK2ITRADE MARK NOTES 1. MATERIAL & PLATING: SEE CHART 2. MATING PIN : 2.36 DIA. ROUND PIN

Marking N2

Abstract: KRC866U marking .N2
Contextual Info: SEMICONDUCTOR KRC866U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking N2 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark N2 KRC866U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.