MARK N6 Search Results

ADV9502

Abstract: ep320Ipc TNPLD610 N85C220 D5AC312 EP320IDC npld610 EP320IPI EPX780LC84 N5C180
Contextual Info: April 4, 1995 Dear Customer: Effective July 1, 1995, Altera will transition from a dual mark, to a single mark for all products acquired from Intel. In addition, Altera will be converting solely to Altera ordering codes for these products See Table 1 . This change is cosmetic in nature and does not effect

marking n6

Abstract: KRC419E MARK N6
Contextual Info: SEMICONDUCTOR KRC419E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking N6 No. Item Marking 1 Device Mark N6 KRC419E 2 hFE Grade - - 00.12.27 Revision No : 00 Description 1/1

marking n6 transistor

Abstract: KRC119S MARK N6
Contextual Info: SEMICONDUCTOR KRC119S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking N6 No. 1 Item Marking Device Mark N6 KRC119S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

KRC419

Contextual Info: SEMICONDUCTOR KRC419 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 N6 1 2 Item Marking Description Device Mark N6 KRC419 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KRC869U

Contextual Info: SEMICONDUCTOR KRC869U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking N6 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark N6 KRC869U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRC669U

Abstract: MARK N6 marking n6
Contextual Info: SEMICONDUCTOR KRC669U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking N6 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark N6 KRC669U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs

KRC869E

Contextual Info: SEMICONDUCTOR KRC869E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking N6 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark N6 KRC869E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRC669E

Contextual Info: SEMICONDUCTOR KRC669E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking N6 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark N6 KRC669E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

CS4281

Abstract: ctl14 SLV8 AC97 CS4280 CS4294 CS4297 SLV6 acsda
Contextual Info: &U\VWDO 6HPLFRQGXFWRU 3&,$XGLR'HVLJQ*XLGHIRU PEHGGHG6\VWHPV Specification of Hardware Interfaces Required for PCI Audio in Embedded Applications Mark Gentry &U\VWDO 6HPLFRQGXFWRU Table of Contents 1 2 3 Revision History . 3

IRF530N

Abstract: MOSFET IRF530n
Contextual Info: IRF530N Data Sheet July 2001 22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET FO pdfPackaging mark Features JEDEC TO-220AB [ /PageMode /UseOutlines /DOCVIEW pdfmark SOURCE DRAIN GATE DRAIN FLANGE IRF530N • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V

Contextual Info: 3 Diamond Grade Conspicuity Markings Series 983 Product Bulletin 983 June 2009 Description 3M™ Diamond Grade™ Conspicuity Markings Series 983 are highly retroreflective microprismatic markings designed to mark the sides and rear of vehicles for enhanced visibility and

Contextual Info: 291 Compact Photoelectric Sensor Amplifier Built-in CX-400 SERIES Ver.2 FIBER SENSORS Related Information LASER SENSORS •■General terms and conditions. F-17 ■■MS-AJ / CHX-SC2.P.919 / P.920 ■■Korea’s S-mark. P.1410

Contextual Info: Single Output UMP Models High-Efficiency, Smaller-Package 25-40 Watt, DC/DC Converters Features • Higher operating temperatures ■ Fully potted ■ Designed to meet UL1950 and EN60950 basic insulation ■ mark available (75V-input models) ■ Fully isolated, 1500Vdc guaranteed

0N6S

Abstract: tb10ns
Contextual Info: INDUCTORS TECHNOLOGY OF TOMORROW THIN FILM STRUCTURE CHIP INDUCTOR KL73 1 2 3 4 5 6 7 8 9 10 Ceramic substrate Cross electrode Polymide insulated film Cu thin film coil pattern Epoxy protection film Ni barrier Solder plating Via hole Direction mark Marking

MARKING H9

Contextual Info: INDUCTORS TECHNOLOGY OF TOMORROW THIN FILM CHIP INDUCTOR KL73 STRUCTURE 1 2 3 4 5 6 7 8 9 10 Ceramic substrate Cross electrode Polymide insulated film Cu thin film coil pattern Epoxy protection film Ni barrier Solder plating Veer hole Direction mark Marking

Contextual Info: INDUCTORS TECHNOLOGY OF TOMORROW THIN FILM STRUCTURE CHIP INDUCTOR KL73 1 2 3 4 5 6 7 8 9 10 Ceramic substrate Cross electrode Polymide insulated film Cu thin film coil pattern Epoxy protection film Ni barrier Solder plating Via hole Direction mark Marking

C8413-60153 AX4

Abstract: IC 74502 OX2114A-HZ-1-24.576-3.3
Contextual Info: Elan Microelectronics Crop. EM65568 130COM/ 128SEG 4096 Color STN LCD Driver April 1, 2004 Version 0.9 Version 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 EM65568 Specification Revision History Content Initial version 1. Add Pad configuration 2. Add the shape of alignment mark

marking TB

Abstract: 8 tb 08 Marking code H6 TE 56 -ATC
Contextual Info: INDUCTORS THIN FILM STRUCTURE CHIP INDUCTOR KL73 1 2 3 4 5 6 7 8 9 10 Ceramic substrate Cross electrode Polymide insulated film Cu thin film coil pattern Epoxy protection film Ni barrier Solder plating Via hole Direction mark Marking IDENTIFICATION PRODUCT CODE

Contextual Info: INDUCTORS TECHNOLOGY OF TOMORROW THIN FILM STRUCTURE CHIP INDUCTOR KL73 1 2 3 4 5 6 7 8 9 10 Ceramic substrate Cross electrode Polymide insulated film Cu thin film coil pattern Epoxy protection film Ni barrier Solder plating Via hole Direction mark Marking

Contextual Info: INDUCTORS THIN FILM STRUCTURE CHIP INDUCTOR KL73 1 2 3 4 5 6 7 8 9 10 Ceramic substrate Cross electrode Polymide insulated film Cu thin film coil pattern Epoxy protection film Ni barrier Solder plating Via hole Direction mark Marking IDENTIFICATION PRODUCT CODE

2n2 j 100

Contextual Info: INDUCTORS TECHNOLOGY OF TOMORROW THIN FILM STRUCTURE CHIP INDUCTOR KL73 1 2 3 4 5 6 7 8 9 10 Ceramic substrate Cross electrode Polymide insulated film Cu thin film coil pattern Epoxy protection film Ni barrier Solder plating Via hole Direction mark Marking

2n2 j 100

Abstract: nh33 marking 68N KL73
Contextual Info: INDUCTORS TECHNOLOGY OF TOMORROW THIN FILM CHIP INDUCTOR KL73 STRUCTURE 1 2 3 4 5 6 7 8 9 10 Ceramic substrate Cross electrode Polymide insulated film Cu thin film coil pattern Epoxy protection film Ni barrier Solder plating Veer hole Direction mark Marking

PC-1149

Abstract: AN-1022 AN-1023 AN-1037 C1996 SCANPSC100F SCANPSC110F Scan Tutorial Handbook Volume I IC sequential DATA BASE motorola AN1037
Contextual Info: National Semiconductor Application Note 1022 Mark Grabosky February 1996 ABSTRACT Designing IC’s boards and systems with a DFT strategy that utilizes boundary-scan will make a quantum improvement in test development cycle-time and fault coverage both in production and in the field Tools are commercially

10084

Abstract: NX 9121 C8413-60153 AX4 PC111 bj pc150 EM65568 EM65568AF EM65568AGH EM65568BF LS5 MARK
Contextual Info: Elan Microelectronics Crop. EM65568 130COM/ 128SEG 4096 Color STN LCD Driver October 12, 2004 Version 1.2 Version 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 EM65568 Specification Revision History Content Initial version 1. Add Pad configuration 2. Add the shape of alignment mark