MARKING 1R PNP Search Results

MMBT6428

Abstract: mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088
Contextual Info: Surface Mount Low Noise Transistors Part No., Marking Code and Polarity NPN hFE NF Max. Condition Frequency PNP dB MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 1K 1K 1L 1U 1U 1Q 1Q 1R 1R MMBT5086 KST5086 MMBT5087 TMPT5087

sot-23 Marking G1

Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued Low-Noise SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN NF dB Device MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 fT hfe Max @'C (mA) Min (MHz) Marking (Typ) Vb R(CEO) Min 1Q 1R 1U 1K 1L 1.0 1.0

BCW60BLT1

Abstract: BCW60CLT1 BCW60DLT1 marking 1R PNP marking code 1Y
Contextual Info: BCW60LT1 NPN Silicon Epitaxial Planar Transistors for general purpose switching and amplification. These transistors are subdivided into three groups B, C and D, according to their current gain. As complementary types the PNP transistors BCW61LT1 are recommended.

4009-001

Abstract: 4009 NOT GATE IC SRA2201EF marking 1R
Contextual Info: SRA2201EF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

3009

Abstract: 13001 TRANSISTOR SRA2201U
Contextual Info: SRA2201U Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

marking 1R

Abstract: SRA2201E
Contextual Info: SRA2201E Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

ic 4072

Abstract: SRA2201K
Contextual Info: SRA2201K Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

3006 8 pin transistor

Abstract: 13001 TRANSISTOR SRA2201UF
Contextual Info: SRA2201UF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

IC 4009 DATASHEET

Abstract: 4009 data sheet pdf file 4009 be se 4009 SRA2201EF
Contextual Info: SRA2201EF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

2SB970

Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB970 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Mini type package,allowing downsizing of the equipment and automatic 0.4 3 Low collector-emitter saturation voltage VCE sat .

BS33G

Abstract: 2N3906V transistor 2N3 marking O9
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3906V EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Icgj^-SOnAiMax. , IBL=-50nA Max.) @VCe=-3 OV, V EB=-3V. • Excellent DC Current Gain Linearity. • Low Saturation Voltage

2T203

Abstract: MMBT4403LT1
Contextual Info: M C C SOT-23 Plastic-Encapsulate Transistors MMBT4403LT1 TRANSISTOR PNP 1.BASE 2 .EMITTER 3.COLLECTOR FEATURES Pc m : 0.3 W (Tam b=251C ) Collector current ICM: -0.6 A C o llecto r-base vo ltag e V{gr)cbo :-40V Operating and storage junction temperature range

SRA2201E

Contextual Info: SRA2201E PNP Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features COMMON • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and

2SB970

Contextual Info: Transistor 2SB970 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm +0.2 2.8 –0.3 • Features 1.45 0.95 1 3 +0.1 0.4 –0.05 1.9±0.2 0.65±0.15 0.95 +0.2 ● 0.65±0.15 Low collector to emitter saturation voltage VCE sat .

SRA2201U

Contextual Info: SRA2201U PNP Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features COMMON IN • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and

SRA2201UF

Contextual Info: SRA2201UF PNP Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and

marking 1R

Contextual Info: SRA2201U Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

marking 1R

Contextual Info: SRA2201UF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: SRA2201E Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: SRA2201EF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: SRA2201K Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: SRA2201UF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

2SA1163

Contextual Info: 2SA1163 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 1 6 3 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. High Voltage : Vq e o —_ 120V Excellent hjrE Linearity : hpE dC - -0.1m A) / hpE dC = - 2mA) = 0.95 (Typ.)

marking AE 5pin

Abstract: AE MARKING 5PIN dual transistors UMT5
Contextual Info: 11 UMS N FM S A Transistor, dual, PNP Features Dimensions Units : mm • • • available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages package marking: UMS1N and FMS1A; S1 package contains two transistors, 2SA1037AK, with common emitters Applications •