MARKING 20 ESD Search Results

K2 SOT23-3

Abstract: sot23 marking zs BFR35AP BFR35A
Contextual Info: BFR35AP NPN Silicon RF Transistor 3
For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Marking

Contextual Info: BFR35AP NPN Silicon RF Transistor 3
For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Marking

Contextual Info: BFR35AP NPN Silicon RF Transistor 3
For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Marking

BCW66

Abstract: BFR35AP MARKING CODE 21E SOT23
Contextual Info: BFR35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents 2 3 from 0.5mA to 20 mA 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR35AP Marking GEs Pin Configuration

marking code f 25 x

Abstract: marking code R1 sot23
Contextual Info: CMPLC1V5 CMPLC1V5D SURFACE MOUNT LOW CAPACITANCE SILICON ESD TRANSIENT DATA LINE PROTECTOR SOT-23 CASE MARKING CODES: CMPLC1V5 SINGLE : CLV5 CMPLC1V5D (DUAL): CV5D MAXIMUM RATINGS: (TA=25°C) Reverse Stand-off Voltage Peak Pulse Power (8 x 20µs Waveform)

Contextual Info: BFR 35AP NPN Silicon RF Transistor 3
For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR 35AP Marking

GaAs FET cfy 19

Abstract: S11 SIEMENS z0 607 MA 7a
Contextual Info: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20

bft97

Abstract: transistor BFT 97 BFT 97 marking t54 20mAVCE transistor marking zs Q62702-F514 Transistor BFT 10 MARKING CODE t54
Contextual Info: SIEM ENS BFT 97 NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

80846

Abstract: 022241 gummel
Contextual Info: BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 81 SOT-143

Transistor BFR 97

Abstract: bfr 49 transistor BFR34A
Contextual Info: SIEMENS BFR 34A NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 34A BFR 34A Q62702-F346-S1

Contextual Info: BFR 35AP NPN Silicon RF Transistor 3
For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 0.5 mA to 20 mA 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR 35AP

sot-23 MARKING CODE ZA

Abstract: BFQ29P
Contextual Info: NPN Silicon RF Transistor BFQ29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 to 20 mA. E CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

Contextual Info: BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 3 • Pb-free RoHS compliant package 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17P Marking MCs

Contextual Info: BFS17W NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 3 2 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17W Marking MCs

Contextual Info: BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 3 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17P Marking MCs

bft92

Abstract: DB642
Contextual Info: BFT92 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents up to 20 mA. • Complementary type: BFR 92P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (tape and reel)

F804

Abstract: Q62702-F804
Contextual Info: PNP Silicon RF Transistor ● For broadband amplifiers up to 2 GHz at collector currents up to 20 mA. ● Complementary type: BFQ 71 NPN . BFQ 76 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel)

RF AMPLIFIER marking S1

Contextual Info: Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking Package MRFIC0970 0970 QFN-20 The MRFIC0970 is a single supply, RF power amplifier designed for the 2.0 W GSM900

SMD MARKING CODE 901

Abstract: CFY 19 CFY 10 GaAs FET cfy 14
Contextual Info: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393

BFR90

Contextual Info: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration

30227

Abstract: IC f 922 Transistor BFT 98 infineon marking W1s SOT23 Transistor BFT 10 BFT92 W1S SOT23
Contextual Info: BFT 92 PNP Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz at collector currents up to 20 mA
Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT 92 W1s

GMA marking

Abstract: IC 2272
Contextual Info: BFP 182R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 182R

CFY75

Abstract: cfy 75 cfy 14 siemens HEMT marking P FMI 591 cfy siemens CFY 19
Contextual Info: SIEMENS CFY 75 AIGaAs/GaAs HEMT • Very low noise • Very high gain • For low-noise front end amplifiers up to 20 GHz • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

BFT92

Abstract: 30227 infineon marking W1s marking W1S sot23 transistor Bft92 infineon marking W1s SOT23 W1S SOT23
Contextual Info: BFT92 PNP Silicon RF Transistor 3
For broadband amplifiers up to 2 GHz at collector currents up to 20 mA
Complementary type: BFR 92P NPN 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFT92 W1s Pin Configuration