MARKING 2SD1664 Search Results

2SD1664

Abstract: Marking TRANSISTOR 232
Contextual Info: 2SD1664 Transistor, NPN Features Dimensions U n its : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SD1664; DA-*, where ★ is hFE code • PC = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage,

2SD1664

Abstract: marking 2sd1664
Contextual Info: 2SD1664 Transistor, NPN Features Dimensions Units : mm 2SD1664 (MPT3) 4j .e5 -+0 0 .'2 1 u> i.e ± o . i R I r-fl rm : i ! ! ! ! ! in csi Tl (1) J Œ I î M 1.0 ±0.3 available in MPT3 (MPT, SC-62) package package marking: 2SD1664; DA*, where ★ is hFE code

NB SOT-23 NPN

Abstract: ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to

Contextual Info: 2SB1132 Transistor, PNP Features Dimensions Units : mm • available In MPT3 (MPT, SC-62) package • package marking: 2SB1132; BA*-, where ★ is hFE code 2SB1132 (MPT3) • Pc = 2 W (when mounted on 40 x 40 x 0.7 mm ceramic PCB) • low collector saturation voltage,

Contextual Info: 2SB1132 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SB1132; B A *, where ★ is hFE code 2SB1132 (MPT3) . , +0.2 *•5—0.1 1.6±0.1 • Pc = 2 W (when mounted on 40 x 40 x 0.7 mm ceramic PCB)

2SD882P

Abstract: ch3904 marking J1 sot-23 T05 sot-23 sot-23 marking NE MARKING J3 SOT-23 marking NB SOT-23 CHT846BWPTR LT 723 ic marking J2 sot-23
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA 200 500 200 150 150 150 500 200 100 100 100 50 500 200 600 600 100 100 100 150 150 150 200

tc 144e

Abstract: 144EK
Contextual Info: Part Marking □Marks are filled with hR ranks EM3 #h n Ranking Inc Ication C ode hFE R anking C ode h R R anking P a rt M a rkin g P a rt No. P ackage P art M arking 1C D P art No. 2SC4082 AD 2SC4818 ACD 2SC 4725 1D D 2SC4063 ADD 2SC 4726 1ED 2S C 4 0 S 4

2SD1664

Contextual Info: 2SD1664 2SD1664 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 1 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD1664 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current 1 A ICM: Collector-base voltage

smd transistor marking br

Abstract: smd transistor marking da smd marking DA transistor SMD DA MARKING SMD TRANSISTOR P SMD BR 32 DA SMD transistor smd marking smd transistor marking 1 da transistor 2SD1664
Contextual Info: Transistors SMD Type Medium Power Transistor 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5

transistor smd marking BA

Abstract: smd transistor marking br MARKING SMD TRANSISTOR P smd transistor marking ba SMD BR 32 2SB1132 SMD SMD TRANSISTOR BR transistor smd br transistor smd marking BR br smd transistor
Contextual Info: Transistors SMD Type Medium Power Transistor 2SB1132 Features Low VCE sat Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO

Contextual Info: SMD Type Product specification 2SB1132 Features Low VCE sat Compliments to 2SD1664 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V -1 A Collector Current

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD1664 SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) z Complements to 2SB1132 2. COLLECTOR 1 2 3. EMITTER

2SD1664

Abstract: sot89 DAQ DAQ Electronics 2SB1132 transistor 2SD1664
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD1664 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) z Complements to 2SB1132 2. COLLECTOR 1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

sot89 DAQ

Abstract: dap 08 ic sot89 dar marking 24 SOT-89 DAR transistor 04 MARKING sot-89
Contextual Info: 2SD1664 SOT-89 Transistor NPN 1. BASE SOT-89 2. COLLECTOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 B Features — — 2.6 4.25 2.4 3.75 0.8 MIN Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) Complements to 2SB1132 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

marking 2sd1664

Contextual Info: Transistors Diodes SMD Type Product specification 2SD1664 Features Low VCE sat Compliments to 2SB1132 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO

marking 24 SOT-89

Abstract: marking BAR sot-89 2SB1132 sot-89 PF PNP TRANSISTOR SOT89 sot89 bar bAr sot-89 marking BAR sot89 sot-89 transistor
Contextual Info: 2SB1132 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 2 4.6 4.4 1.8 1.4 1.6 1.4 3. EMITTER B 3 2.6 4.25 2.4 3.75 Features — 0.8 MIN Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA Compliments 2SD1664 — 0.44 0.37 Parameter Value Units VCBO Collector-Base Voltage

Contextual Info: 2SD1664 NPN Epitaxial Planar Transistors P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 Features: * Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 3 SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Limits Unit Collector-Base Voltage

p64 transistor

Abstract: 2SD1664PT 2SD1664P
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SD1664PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 1 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Suitable for high packing density.

2SD1664GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SD1664GP SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 1 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Suitable for high packing density.

2SD1664

Abstract: 4250 transistor
Contextual Info: 2SD1664 NPN Silicon General Purpose Transistor Elektronische Bauelemente R o H S C o m p lia n t P ro d u c t D D1 Features A E E1 SOT-89 b1 1 2 b 3 C e L Power dissipation o PCM : 0.5 W Tamb= 25 C e1 1.BASE Collector current 2.COLLECTOR ICM : 1 A 3.EMITTER

2sd1664

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SD1664 Features • • • • • • Complements to 2SB1132 Low collector-to-emitter saturation voltage.

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SD1664 Features • • • • • • • Halogen free available upon request by adding suffix "-HF" Complements to 2SB1132

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR  DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor.  FEATURES *Low VCE SAT : VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132.