MARKING 4FL Search Results

marking code 7G sot-143

Contextual Info: SIEMENS BF 997 Silicon N Channel MOSFET Tetrode • Integrated suppression network against spurious VHF oscillations • For VHF applications, especially in TV tuners with extended VHF band, e. g. in CATV tuners Type Marking Ordering Code tape and reel BF 997

Contextual Info: Temic BF799 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications In high gain IF-amplifiers for surface acoustic wave filters. Features • • High power gain Low noise figure 1 R iJ— E3T 2 9+9280 BF799 Marking: G2 Plastic case SOT 23

241K010

Abstract: 471KD14 391kd10 431K010 471kd07 431KD07 471KD20 391kd07 471kd10 S47120
Contextual Info: E L E C T R I C A L WORLD PRODUCTS C H A R A C T E R INC 4flE D •nmahô odqqgo I S T I C S ? t ASIAN STAN DARD Featuring Sanken’s New Super “S ” Series Part Number (SNR) Actual Part Marking Disc IDiameter Size (mm) Rated Voltage AC Volts (R M S)

Contextual Info: SIEMENS NPN Silicon Switching Transistor SMBT4124 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4124 sZC Q68000-A8316 B SOT-23 E C Maximum Ratings

Transistor K 799

Abstract: marking G2 NPN planar RF transistor
Contextual Info: Tem ic BF799 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications In high gain IF-amplifiers for surface acoustic wave filters. Features • High power gain • Low noise figure 1 H TJ- - ET3 2 »9 2 8 0 BF799 Marking: G2 Plastic case SOT 23

Contextual Info: Snap-In Capacitors LL Grade B 43 502 Long service life Operation at temperatures up to 85 °C Construction • • • • • • • Charge-discharge proof, polar Aluminum case, fully insulated Snap-in solder pins to hold component in place on PC-board Minus pole marking on case surface

Contextual Info: SOLITRON DEVICES INC 4flE D • fi3bflb02 QGG37flb T48 M S O D j JOLITRON DEVICES PRODUCT SPECIFICATION cu st. + 12 VOLT 2 0°C % REGULATOR to DWG G e n e r a l | + 7 0°C t y p e no 1 si 1 REV. - Purpose T - tt- li- l* CJSE067 NPN Ge PNP TO-3 | CLASS STANDARD [71

Contextual Info: • bbSS'Dl 0 0 5 4 5 6 2 4flfl N AMER PHILIPS/DISCRETE BAS29 BAS31 BAS35 IAPX b7E 3 _ / v _ SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAS29, BAS31 and the BAS35 are silicon planar epitaxial diodes encapsulated in a SOT-23 envelope.

BST62

Abstract: BST60 BST61
Contextual Info: • bb53T31 DD2Sb41 4flb H A P X N AMER PHILIPS/DISCRETE BST60 BST61 BST62 b7E ]> JV P-N-P SILICON PLANAR DARLINGTON TRANSISTORS Silicon p-n-p planar Darlington transistors for industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a microminiature plastic SOT-89 envelope.

IRF1520

Contextual Info: • International rä« Rectifier 4flSS4S2 DOlSOfifi 077 « I N R p d -9.830 IRFI520G INTERNATIONAL RECTIFIER HEXFET Power M O SFET Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating

rectifier ds3

Contextual Info: International m 4flSS4S2 0015274 344 —inr pd-9.856 lk»riRectifier IRFIBF30G H EX FET P o w e r M O S F E T • • • • • IN T E R N A T IONAL Isolated Package High Voltage lsolation= 2.5KV R M S Sink to Lead Creepage Dist.= 4.8mm Dynam ic dv/dt Rating

Contextual Info: International k » 1Rectifier HEXFET P ow er M O SFET • • • • • • 4fl5S4S2 00145bA TT b • INR PD-9.567B IRC730 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: i 4flS54S2 International k Rectifier 0=17 • IN R PD-9.656A IRFPC50 INTERNATIONAL HEXFET® Power M O SFET • • • • • • DD1S574 RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

Contextual Info: International ggg] Rectifier 4fl55452 0015blt 37b • INR HEXFET Power MOSFET INTERNATIO NAL • • • • • • PD-9.542B IRFPF50 r e c t if ie r Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling

F9Z34

Contextual Info: m 4flSS4S2 DDii,3fi ßci2 • inr pd-9.648a International Imr] Rectifier IR F9Z34 HEXFET« Power MOSFET • • • • • • • INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching

Contextual Info: 4fl5545E DD1457b T7E • INR International s ] Rectifier IRC740 INTERNATIONAL RECTIFIER HEXFET® P ow er M O S FE T • • • • • • PD-9.570B Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements

AV73-1

Abstract: AV73 AV9173-01CS8 AV9173-01CN8 AV731 HSYNC GENERATE PIXEL CLOCK AV9173 AV9173-01 AV9173-01CC8 video genlock pll soic 8
Contextual Info: bflE D INTEGRATED CIRCUIT • 4fl5S7Sfl DQOOflfll 23S ■ ICS AV9173 Integrated Circuit Systems, Inc. Video Genlock PLL Features General Description • Phase-detector/VCO circuit block • Ideal for genlock system • Reference clock range 15 kHz to 1 MHz

Contextual Info: INTEGRATED CIRCUIT bf l E D • 4fl2S7Sfl Q00DS17 04T ■ AV9154 Integrated Circuit Systems,Inc. Low Cost 16 Pin Frequency Generator Features General Description • Com patible w ith 286,386, and 486 CPUs • G enerates u p to 6 o u tp u t clocks for CPU plus

OFL-12

Abstract: SFZ-3A jds optics switch 1 Seiko fc electronic passive components catalog sii Product Catalog
Contextual Info: Fiber Optics Product Catalog Components Headquaters Product Catalog CMOS IC Quartz Crystals Micro Batteries Fiber Optics MATERIALS Liquid Crystal Display Custom LCD Module The optical communications technology of the next generation will be of increasing importance and extremely

Contextual Info: International S Rectifier PD - 2.479A 20CJQ060 2 Amp SCHOTTKY RECTIFIER Major Ratings and Characteristics Characteristics If a v 20CJQ060 Units 2.0 A 60 V 385 A 0.56 V -55 to 150 °C Rectangular waveform V rrm Ifs m @ tp = 5ps sine VF @ I.OApk, T j = 125°C

Contextual Info: '• r n RAD I ALL TECHNICAL DATA SHEET 3 GHz N LATCHING R573 023335 S.P.3T. Page 11 2 SWITCH OPTIONS : /SUPP.DIODES R F CHARACTERISTICS NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 3 0 - 3 GHz 50 Ohms FREQUENCY GHz V.S.W.R <= INSERT. LOSS <= ISOLATION 0 -

Contextual Info: RAD I ALL '• r n TECHNICAL DATA SHEET 3 GHz N LATCHING R573 023305 S.P.3T. Page 11 2 SWITCH OPTIONS R F CHARACTERISTICS NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 3 0 - 3 GHz 50 Ohms FREQUENCY GHz V.S.W.R <= INSERT. LOSS <= ISOLATION 0 - 3 1.20 0.20 dB

Contextual Info: '• r n RAD I ALL N LATCHING S.P.5T. Page 11 2 SWITCH OPTIONS : /SUPP.DIODES R F CHARACTERISTICS NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 5 0 -12.4GHz 50 Ohms FREQUENCY GHz V.S.W.R <= 0 - 3 8 -12.4 3 - 8 1.20 1.35 1.50 0.20 dB 0.35 dB 0.50 dB >= 80 dB

Contextual Info: '•rn R A D IA L L N LATCHING S.P.5T. Page 112 SWITCH OPTIONS : /SELF CUT-OFF/SUPP.DIODES R F CHARACTERISTICS NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE 5 0 -12.4GHz 50 Ohms FREQUENCY GHz V.S.W.R <= 0 - 3 8 -12.4 3 - 8 1.20 1.35 1.50 0.20 dB 0.35 dB 0.50 dB